BIT SLICE ELEMENTS UTILIZING THROUGH DEVICE ROUTING
    1.
    发明申请
    BIT SLICE ELEMENTS UTILIZING THROUGH DEVICE ROUTING 有权
    通过设备路由使用的点数元素

    公开(公告)号:US20140075401A1

    公开(公告)日:2014-03-13

    申请号:US13609723

    申请日:2012-09-11

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5068

    摘要: A method for the identification and implementation of a logic function includes determining logic gates connected to a control signal that is common among the logic gates of the identified logic function. Standard cells may be created and characterized in order to implement the identified logic function. Creating the standard cell includes aligning respective portions of the logic devices included in the logic gates that are coupled to the control signal. In addition, creating the standard cell may also include routing the control signal using a single layer conductive material uni-directionally to interconnect the logic devices.

    摘要翻译: 用于识别和实现逻辑功能的方法包括确定连接到所识别的逻辑功能的逻辑门之间公用的控制信号的逻辑门。 可以创建和表征标准单元以便实现所识别的逻辑功能。 创建标准单元包括对齐与控制信号耦合的逻辑门中包括的逻辑器件的各部分。 此外,创建标准单元还可以包括使用单层导电材料单向地布线控制信号以互连逻辑器件。

    Memory with redundant sense amplifier

    公开(公告)号:US08559249B1

    公开(公告)日:2013-10-15

    申请号:US13431424

    申请日:2012-03-27

    IPC分类号: G11C7/22 G11C7/00 G11C7/02

    摘要: Embodiments of a memory are disclosed that may reduce the likelihood of a miss-read while reading a weak data storage cell. The memory may include a number of data storage cells, a column multiplexer, a first sense amplifier and a second sense amplifier, and an output circuit. The gain level of the first sense amplifier may be higher than the gain level of the second sense amplifier. The output circuit may include a multiplexer and the multiplexer may be operable to controllably select one of the outputs of the first and second sense amplifiers and pass the value of the selected sense amplifier. The output circuit may include a node that couples the outputs of the first and second sense amplifiers and the outputs of the first and second sense amplifiers may be able to be set to a high impedance state.

    Method and apparatus for a 1 of N signal
    3.
    发明授权
    Method and apparatus for a 1 of N signal 失效
    1个N信号的方法和装置

    公开(公告)号:US06911846B1

    公开(公告)日:2005-06-28

    申请号:US09019278

    申请日:1998-02-05

    摘要: The present invention comprises a method and apparatus for an integrated circuit (IC) that uses 1 of N signals to reduce the circuit's wire to wire effective capacitance. The present invention comprises a logic tree circuit coupled to a first 1 of N input signal, a second 1 of N input signal, and a 1 of N output signal where the 1 of N signals' reduce the signal's wire to wire effective capacitance. Other embodiments of the present invention include the use of a 1 of 2 signal, a 1 of 3 signal, a 1 of 4 signal, and a 1 of 8 signal where one and one of the wires of the signal is active.

    摘要翻译: 本发明包括一种用于集成电路(IC)的方法和装置,其使用N个信号中的1个来减少电路的导线以有效电容。 本发明包括一个逻辑树电路,其耦合到N个输入信号的第一个1,N个输入信号的第二个1和N个输出信号中的1个,其中N个信号的1个将信号的导线降低到有线电容。 本发明的其它实施例包括使用2个信号中的1个,3个信号中的1个,4个信号中的1个,以及信号中的一个和一个有效的8个信号中的1个信号。

    Method and apparatus for routing 1 of 4 signals
    4.
    发明授权
    Method and apparatus for routing 1 of 4 signals 失效
    用于路由4个信号中的1个的方法和装置

    公开(公告)号:US06211456B1

    公开(公告)日:2001-04-03

    申请号:US09073479

    申请日:1998-05-06

    IPC分类号: H01B1104

    摘要: The present invention is a method and apparatus of routing a 1 of 4 signal to reduce the effective signal coupling between the signal wires. The present invention is a wire pack with a first, second, third, and fourth wire for routing a 1 of 4 signal in a semiconductor device. While routing the wires of the wire pack, the present invention rotates the route of each individual wire to reduce the signal coupling between the wires. Additionally, an isolation barrier borders the outside of the wire pack to further reduce the signal coupling. The rotation of the wires allow each individual wire to be adjacent to each other wire for ½ of the wire's route.

    摘要翻译: 本发明是一种方法和装置,用于对4个信号中的1个进行路由以减少信号线之间的有效信号耦合。 本发明是一种具有第一,第二,第三和第四电线的电线组件,用于在半导体器件中路由4个信号中的1个信号。 在布线电线的电线的同时,本发明旋转各个电线的路线,以减少电线之间的信号耦合。 此外,隔离屏障与电线组件的外部相邻,以进一步减少信号耦合。 电线的旋转允许每根单独的电线与电线的一半线路相邻。

    Latch array utilizing through device connectivity
    6.
    发明授权
    Latch array utilizing through device connectivity 有权
    通过设备连接利用的锁存阵列

    公开(公告)号:US08947120B2

    公开(公告)日:2015-02-03

    申请号:US13613184

    申请日:2012-09-13

    IPC分类号: H03K19/173

    CPC分类号: G06F17/5045

    摘要: A circuit for implementing latch array functions on an integrated circuit. Portions of the logic devices included in the implementation of the latch array functions that are controlled by a common signal, may be arranged in a particular alignment. A single layer uni-directionally conductive material may connect the common signal to the logic devices.

    摘要翻译: 用于在集成电路上实现锁存阵列功能的电路。 包括在由公共信号控制的锁存阵列功能的实施中的逻辑设备的部分可以被排列成特定的对准。 单层单向导电材料可以将公共信号连接到逻辑器件。

    WEAK BIT DETECTION IN A MEMORY THROUGH VARIABLE DEVELOPMENT TIME
    7.
    发明申请
    WEAK BIT DETECTION IN A MEMORY THROUGH VARIABLE DEVELOPMENT TIME 有权
    通过可变发展时间在记忆中进行弱点检测

    公开(公告)号:US20130265836A1

    公开(公告)日:2013-10-10

    申请号:US13443170

    申请日:2012-04-10

    IPC分类号: G11C7/12 G11C7/00

    摘要: Embodiments of a memory are disclosed that may allow for the detection and compensation of weak data storage cells. The memory may include data storage cells, a selection circuit, a sense amplifier, and a timing and control block. The timing and control block may be operable to controllably select differing time periods between the activation of the selection circuit and the activation of the sense amplifier.

    摘要翻译: 公开了可以允许弱数据存储单元的检测和补偿的存储器的实施例。 存储器可以包括数据存储单元,选择电路,读出放大器以及定时和控制块。 定时和控制块可操作以可控地选择激活选择电路和感测放大器的激活之间的不同时间段。

    MEMORY WITH BIT LINE CURRENT INJECTION
    8.
    发明申请
    MEMORY WITH BIT LINE CURRENT INJECTION 有权
    记忆线路电流注入

    公开(公告)号:US20130229877A1

    公开(公告)日:2013-09-05

    申请号:US13409399

    申请日:2012-03-01

    IPC分类号: G11C29/00 G11C7/06 G11C7/10

    摘要: Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells or may allow operation of data storage cells under conditions that may represent the effects of transistor ageing. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a current injector. The current injector may be configured to generate multiple current levels and may be operable to controllably select one of the current levels to either source current to or sink current from the input of the sense amplifier.

    摘要翻译: 公开了可以允许检测弱数据存储单元的存储器的实施例,或者可以允许在可以代表晶体管老化的影响的条件下操作数据存储单元。 存储器可以包括数据存储单元,列多路复用器,读出放大器和电流注入器。 电流注入器可以被配置为产生多个电流电平,并且可以可操作以可控地选择电流电平中的一个,以从感测放大器的输入端到源电流或从其中吸收电流。

    MEMORY WITH BIT LINE CAPACITIVE LOADING
    9.
    发明申请
    MEMORY WITH BIT LINE CAPACITIVE LOADING 有权
    存储器与位线电容负载

    公开(公告)号:US20130223158A1

    公开(公告)日:2013-08-29

    申请号:US13403543

    申请日:2012-02-23

    IPC分类号: G11C7/10 G11C7/06

    摘要: Embodiments of a memory are disclosed that may allow for the detection of weak data storage cells. The memory may include data storage cells, a column multiplexer, a sense amplifier, and a load circuit. The load circuit may include one or more capacitive loads and may be operable to controllably select one or more of the capacitive loads to couple to the input of the sense amplifier.

    摘要翻译: 公开了可以允许检测弱数据存储单元的存储器的实施例。 存储器可以包括数据存储单元,列多路复用器,读出放大器和负载电路。 负载电路可以包括一个或多个容性负载,并且可操作以可控制地选择一个或多个容性负载以耦合到读出放大器的输入端。

    ONE-OF-N N-NARY LOGIC IMPLEMENTATION OF A STORAGE CELL
    10.
    发明申请
    ONE-OF-N N-NARY LOGIC IMPLEMENTATION OF A STORAGE CELL 失效
    存储单元的N / N三进制逻辑实现

    公开(公告)号:US20130049805A1

    公开(公告)日:2013-02-28

    申请号:US13215287

    申请日:2011-08-23

    IPC分类号: H03K19/02

    摘要: A one-of-n storage cell for use in an N-nary dynamic logic (NDL) circuit. The storage cell may accept an input value and provide a complemented output value that corresponds to the input value. However, if an input value that corresponds to a precharge input value is received, the output value remains the previous output value. The storage cell may be implemented to accept either inverted or non-inverted one-of-n NDL signals and to provide as an output either non-inverted or inverted one-of-N NDL signals, respectively, where N is greater than two.

    摘要翻译: 一种用于N-Nary动态逻辑(NDL)电路的n位存储单元。 存储单元可以接受输入值并提供对应于输入值的补码输出值。 然而,如果接收到与预充电输入值对应的输入值,则输出值保持以前的输出值。 存储单元可以被实现为接受反相或非反相的一个n个NDL信号,并且分别提供N个大于2的非反相或反向的N个NDL信号作为输出。