MICROELECTRONIC DIE PACKAGES WITH LEADFRAMES, INCLUDING LEADFRAME-BASED INTERPOSER FOR STACKED DIE PACKAGES, AND ASSOCIATED SYSTEMS AND METHODS
    1.
    发明申请
    MICROELECTRONIC DIE PACKAGES WITH LEADFRAMES, INCLUDING LEADFRAME-BASED INTERPOSER FOR STACKED DIE PACKAGES, AND ASSOCIATED SYSTEMS AND METHODS 有权
    具有LEADFRAMES的微电子芯片封装,包括用于堆叠式DIE封装的基于LEADFRAME的插座,以及相关系统和方法

    公开(公告)号:US20110215453A1

    公开(公告)日:2011-09-08

    申请号:US13110060

    申请日:2011-05-18

    IPC分类号: H01L25/11

    摘要: Microelectronic die packages, stacked systems of die packages, and methods of manufacturing thereof are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes stacking a first die package having a first dielectric casing on top of a second die package having a second dielectric casing, aligning first metal leads at a lateral surface of the first casing with second metal leads at a second lateral surface of the second casing, and forming metal solder connectors that couple individual first leads to individual second leads. In another embodiment, the method of manufacturing the microelectronic device may further include forming the connectors by applying metal solder to a portion of the first lateral surface, to a portion of the second lateral surface, and across a gap between the first die package and the second die package so that the connectors are formed by the metal solder wetting to the individual first leads and the individual second leads.

    摘要翻译: 本文公开了微电子管芯封装,管芯封装的堆叠系统及其制造方法。 在一个实施例中,一种制造微电子器件的方法包括将具有第一介电壳体的第一管芯封装堆叠在具有第二介电壳体的第二管芯封装的顶部上,使第一壳体的侧表面上的第一金属引线与第二金属 在第二壳体的第二侧表面处引导,并且形成将单独的第一引线连接到单独的第二引线的金属焊料连接器。 在另一个实施例中,制造微电子器件的方法还可以包括通过将金属焊料施加到第一侧表面的一部分,第二侧表面的一部分,以及跨越第一管芯封装和第二侧表面之间的间隙来形成连接器 第二管芯封装,使得连接器由金属焊料形成,其润湿到各个第一引线和各个第二引线。

    Castellated chip-scale packages and methods for fabricating the same
    2.
    发明授权
    Castellated chip-scale packages and methods for fabricating the same 有权
    Castellate芯片级封装及其制造方法

    公开(公告)号:US07208335B2

    公开(公告)日:2007-04-24

    申请号:US10717421

    申请日:2003-11-19

    IPC分类号: H01L21/00 H01L21/30

    摘要: A method for fabricating a chip-scale package includes securing a device substrate that carries at least two adjacent semiconductor devices to a sacrificial substrate. The sacrificial substrate may include conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. The device substrate is then severed along each street and the newly formed peripheral edge of each semiconductor device coated with dielectric material. If the sacrificial substrate includes conductive elements, they may be exposed between adjacent semiconductor devices and subsequently serve as lower sections of contacts. Peripheral sections of contacts are formed on the peripheral edge. Upper sections of the contacts may also be formed over the active surfaces of the semiconductor devices. Once the contacts are formed, the sacrificial substrate is substantially removed from the back sides of the semiconductor devices.

    摘要翻译: 一种用于制造芯片级封装件的方法包括将承载至少两个相邻半导体器件的器件衬底固定到牺牲衬底。 牺牲衬底可以包括在其表面上的导电元件,其位于沿着设备衬底上每个相邻的一对半导体器件之间的街道对齐。 然后沿着每个街道切割设备基板,并且每个半导体器件的新形成的外围边缘被涂覆有电介质材料。 如果牺牲衬底包括导电元件,则它们可以在相邻的半导体器件之间暴露,并且随后用作接触的下部。 触点的外围部分形成在周边。 触点的上部部分也可以形成在半导体器件的有效表面上。 一旦接触形成,牺牲基底基本上从半导体器件的背面去除。

    Microelectronic die packages with leadframes, including leadframe-based interposer for stacked die packages, and associated systems and methods
    5.
    发明授权
    Microelectronic die packages with leadframes, including leadframe-based interposer for stacked die packages, and associated systems and methods 有权
    具有引线框架的微电子管芯封装,包括用于堆叠管芯封装的基于引线框架的插入器,以及相关系统和方法

    公开(公告)号:US08525320B2

    公开(公告)日:2013-09-03

    申请号:US13110060

    申请日:2011-05-18

    IPC分类号: H01L23/02

    摘要: Microelectronic die packages, stacked systems of die packages, and methods of manufacturing thereof are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes stacking a first die package having a first dielectric casing on top of a second die package having a second dielectric casing, aligning first metal leads at a lateral surface of the first casing with second metal leads at a second lateral surface of the second casing, and forming metal solder connectors that couple individual first leads to individual second leads. In another embodiment, the method of manufacturing the microelectronic device may further include forming the connectors by applying metal solder to a portion of the first lateral surface, to a portion of the second lateral surface, and across a gap between the first die package and the second die package so that the connectors are formed by the metal solder wetting to the individual first leads and the individual second leads.

    摘要翻译: 本文公开了微电子管芯封装,管芯封装的堆叠系统及其制造方法。 在一个实施例中,一种制造微电子器件的方法包括将具有第一介电壳体的第一管芯封装堆叠在具有第二介电壳体的第二管芯封装的顶部上,使第一壳体的侧表面上的第一金属引线与第二金属 在第二壳体的第二侧表面处引导,并且形成将单独的第一引线连接到单独的第二引线的金属焊料连接器。 在另一个实施例中,制造微电子器件的方法还可以包括通过将金属焊料施加到第一侧表面的一部分,第二侧表面的一部分,以及跨越第一管芯封装和第二侧表面之间的间隙来形成连接器 第二管芯封装,使得连接器由金属焊料形成,其润湿到各个第一引线和各个第二引线。

    Semiconductor device assemblies and packages
    7.
    发明授权
    Semiconductor device assemblies and packages 有权
    半导体器件组件和封装

    公开(公告)号:US08063493B2

    公开(公告)日:2011-11-22

    申请号:US12627352

    申请日:2009-11-30

    IPC分类号: H01L23/52 H01L23/48 H01L29/40

    摘要: A sacrificial substrate for fabricating semiconductor device assemblies and packages with edge contacts includes conductive elements on a surface thereof, which are located so as to align along a street between each adjacent pair of semiconductor devices on the device substrate. A semiconductor device assembly or package includes a semiconductor device, a redistribution layer over an active surface of the semiconductor device, and dielectric material coating at least portions of an outer periphery of the semiconductor device. Peripheral sections of contacts are located on the peripheral edge and electrically isolated therefrom by the dielectric coating. The contacts may also include upper sections that extend partially over the active surface of the semiconductor device. The assembly or package may include any type of semiconductor device, including a processor, a memory device, and emitter, or an optically sensitive device.

    摘要翻译: 用于制造具有边缘触点的半导体器件组件和封装的牺牲衬底包括其表面上的导电元件,其被定位成沿着设备衬底上的每个相邻的一对半导体器件之间的街道排列。 半导体器件组件或封装包括半导体器件,半导体器件的有源表面上的再分布层,以及涂覆半导体器件外周的至少部分的电介质材料。 触点的周边部分位于外围边缘,并通过电介质涂层与其隔离。 触点还可以包括在半导体器件的有效表面上部分延伸的上部部分。 组件或封装可以包括任何类型的半导体器件,包括处理器,存储器件和发射极,或光敏器件。