公开(公告)号：US07679729B2

公开(公告)日：2010-03-16

申请号：US10575379

申请日：2004-09-15

申请人： Toshiyuki Ando ,  Yoshihito Hirano ,  Hiroshi Sakamaki ,  Toshio Wakayama ,  Syumpei Kameyama ,  Masashi Furuta ,  Masahiro Hagio

发明人： Toshiyuki Ando ,  Yoshihito Hirano ,  Hiroshi Sakamaki ,  Toshio Wakayama ,  Syumpei Kameyama ,  Masashi Furuta ,  Masahiro Hagio

IPC分类号： G01P3/36

CPC分类号： G01S17/95 ,  G01P5/26 ,  G01S7/497 ,  G01S17/102 ,  G01S17/58 ,  Y02A90/19

摘要： A light wave radar apparatus includes a frequency deviation detecting unit 12 for detecting a frequency deviation fchirp of a light signal, and a weighted average processing unit 13 for determining a systematic error ΔVoffset from the frequency deviation fchirp detected by the frequency deviation detecting unit 12, and subtracts the systematic error ΔVoffset from a wind velocity VW calculated by a Doppler signal processing unit 11. As a result, the light wave radar apparatus can carry out a measurement of the wind velocity VW with a high degree of precision.

摘要翻译： 光波雷达装置包括：频率偏差检测单元12，用于检测光信号的频率偏差fchirp;以及加权平均处理单元13，用于根据由频率偏差检测单元检测的频率偏差fchirp确定系统误差＆Dgr; Voffset 从多普勒信号处理单元11计算的风速VW中减去系统误差＆Dgr; Voffset。结果，光波雷达装置可以高精度地进行风速VW的测量。

公开(公告)号：US06188283B1

公开(公告)日：2001-02-13

申请号：US09272326

申请日：1999-03-19

申请人： Masahiro Hagio ,  Kaname Motoyoshi ,  Masahiko Inamori ,  Katsushi Tara

发明人： Masahiro Hagio ,  Kaname Motoyoshi ,  Masahiko Inamori ,  Katsushi Tara

IPC分类号： H03G310

CPC分类号： H03F1/0261 ,  H03F3/1935 ,  H03G1/0035 ,  H03G1/0088

摘要： The present invention relates to an amplifier having high amplification efficiency. Amplification efficiency at low output is improved by reducing current at a latter stage depending on output power at the time when output power is reduced by gain control. In order to accomplish this improvement, gain control voltage applied to a gain control circuit for controlling the gain of a signal-amplifying field-effect transistor in a former stage is also applied simultaneously to a bias voltage control circuit for controlling the voltage between the gate and source of a signal-amplifying field-effect transistor in the latter stage, the voltage between the gate and source of the signal-amplifying field-effect transistor in the latter stage is controlled depending on the gain of the signal-amplifying field-effect transistor in the former stage to control the current between the drain and source of the signal-amplifying field-effect transistor in the latter stage. When the gain of the signal-amplifying field-effect transistor in the former stage is reduced, the current between the drain and source of the signal-amplifying field-effect transistor in the latter stage is reduced, whereby the efficiency of the amplifier is maintained high even when the output is low.

摘要翻译： 本发明涉及具有高放大效率的放大器。 通过在输出功率通过增益控制来降低输出功率时，通过减少后期的电流来提高低输出时的放大效率。 为了实现这种改进，施加到用于控制前级的信号放大场效应晶体管的增益的增益控制电路的增益控制电压也同时施加到用于控制栅极之间的电压的偏置电压控制电路 和后级的信号放大场效应晶体管的源极，后级的信号放大场效应晶体管的栅极和源极之间的电压根据信号放大场效应的增益来控制 晶体管在前一级控制在后级的信号放大场效应晶体管的漏极和源极之间的电流。 当前一级的信号放大场效应晶体管的增益减小时，后级的信号放大场效应晶体管的漏源和源极之间的电流减小，从而保持放大器的效率 即使输出低，也是高电平。

公开(公告)号：US07561067B2

公开(公告)日：2009-07-14

申请号：US11392515

申请日：2006-03-30

申请人： Naoki Matayoshi ,  Kimio Asaka ,  Yoshinori Okuno ,  Masahiro Hagio ,  Yoshihito Hirano ,  Shumpei Kameyama ,  Toshiyuki Ando ,  Hidetaka Kiyosue ,  Masashi Furuta ,  Tomoya Matsuda

发明人： Naoki Matayoshi ,  Kimio Asaka ,  Yoshinori Okuno ,  Masahiro Hagio ,  Yoshihito Hirano ,  Shumpei Kameyama ,  Toshiyuki Ando ,  Hidetaka Kiyosue ,  Masashi Furuta ,  Tomoya Matsuda

IPC分类号： G08G5/00 ,  G05D1/00 ,  G01C23/00

CPC分类号： G01P13/025 ,  G01P5/26 ,  G01S17/58 ,  G01S17/95 ,  Y02A90/19

摘要： A measurement system for an aircraft having the three-axis components of the airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and the wind speed distribution ahead of the aircraft simultaneously in real time. It comprises a Doppler anemometer measuring the airflow speeds at a plurality of points separated by a prescribed distance in the beam irradiation direction that changes in a time series, and an inertial data measurement device measuring the movement information and positional information of the aircraft. Moreover, the display system of the aircraft includes the horizontal two-axis airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and information on the wind speed distribution ahead of the aircraft are displayed simultaneously in real time.

摘要翻译： 具有飞机空速三轴分量，飞机目前遇到的风速三轴分量以及飞行器前方风速分布的飞机测量系统。 其包括多普勒风速计，其测量在时间序列变化的光束照射方向上分开规定距离的多个点处的气流速度，以及测量飞行器的移动信息和位置信息的惯性数据测量装置。 此外，飞机的显示系统包括飞机的水平双轴空速，飞机当前遇到的风速的三轴分量以及飞机前方的风速分布的信息被实时显示 时间。

公开(公告)号：US07473929B2

公开(公告)日：2009-01-06

申请号：US10880550

申请日：2004-07-01

申请人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

发明人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US20070236367A1

公开(公告)日：2007-10-11

申请号：US11392515

申请日：2006-03-30

申请人： Naoki Matayoshi ,  Kimio Asaka ,  Yoshinori Okuno ,  Masahiro Hagio ,  Yoshihito Hirano ,  Shumpei Kameyama ,  Toshiyuki Ando ,  Hidetaka Kiyosue ,  Masashi Furuta ,  Tomoya Matsuda

发明人： Naoki Matayoshi ,  Kimio Asaka ,  Yoshinori Okuno ,  Masahiro Hagio ,  Yoshihito Hirano ,  Shumpei Kameyama ,  Toshiyuki Ando ,  Hidetaka Kiyosue ,  Masashi Furuta ,  Tomoya Matsuda

IPC分类号： G01C23/00

CPC分类号： G01P13/025 ,  G01P5/26 ,  G01S17/58 ,  G01S17/95 ,  Y02A90/19

摘要： In the measurement system for an aircraft according to the present invention, the three-axis components of the airspeed of the aircraft, the three-axis components of the wind speed currently encountered by the aircraft, and the wind speed distribution ahead of the aircraft, are measured simultaneously, by providing a Doppler anemometer which measures the airflow speeds at a plurality of points separated by a prescribed distance in the beam irradiation direction, and an inertial data measurement device which measures the movement information and positional information of the aircraft. Furthermore, in the measurement system for an aircraft according to the present invention, the measurement accuracy of the device is improved by providing means for obtaining information the movement and positional information of the aircraft during measurement, from the inertial data measurement device, and for correcting the measurement values from the Doppler anemometer by means of the information.

摘要翻译： 在根据本发明的飞行器的测量系统中，飞行器空速的三轴分量，飞机当前遇到的风速的三轴分量以及飞机前方的风速分布， 通过提供测量在光束照射方向上分开了规定距离的多个点处的气流速度的多普勒风速计和测量飞行器的移动信息和位置信息的惯性数据测量装置同时测量。 此外，在本发明的飞机的测量系统中，通过提供用于从惯性数据测量装置获取信息，测量中的飞行器的移动和位置信息以及用于校正的装置，来提高装置的测量精度 来自多普勒风速计的测量值通过信息。

公开(公告)号：US20050001217A1

公开(公告)日：2005-01-06

申请号：US10880550

申请日：2004-07-01

申请人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

发明人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/78 ,  H01L29/812 ,  G03F9/00

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US4782031A

公开(公告)日：1988-11-01

申请号：US22597

申请日：1987-03-04

申请人： Masahiro Hagio ,  Shinichi Katsu ,  Kazuhide Gohda ,  Shutaro Nambu ,  Hiroshi Tsukada

发明人： Masahiro Hagio ,  Shinichi Katsu ,  Kazuhide Gohda ,  Shutaro Nambu ,  Hiroshi Tsukada

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/08 ,  H01L29/47 ,  H01L29/80 ,  H01L21/265 ,  H01L29/48

CPC分类号： H01L29/66871 ,  H01L29/0891 ,  H01L29/475 ,  H01L29/66878 ,  H01L29/80

摘要： In an FET, two first semiconductor regions of higher impurity concentration and smaller thickness, for source electrode and drain electrode, are formed in a second semiconductor region of lower impurity concentration and larger thickness for a gate electrode, thereby obtaining a low source resistance and small leak current.

摘要翻译： 在FET中，对于源电极和漏电极，杂质浓度和厚度较高的两个第一半导体区域形成在栅电极的较低杂质浓度和较大厚度的第二半导体区域中，从而获得较低的源极电阻和小的 泄漏电流。

公开(公告)号：US07846828B2

公开(公告)日：2010-12-07

申请号：US12338395

申请日：2008-12-18

申请人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

发明人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US20090104762A1

公开(公告)日：2009-04-23

申请号：US12338395

申请日：2008-12-18

申请人： Osamu KUSUMOTO ,  Makoto KITABATAKE ,  Masao UCHIDA ,  Kunimasa TAKAHASHI ,  Kenya YAMASHITA ,  Masahiro HAGIO ,  Kazuyuki SAWADA

发明人： Osamu KUSUMOTO ,  Makoto KITABATAKE ,  Masao UCHIDA ,  Kunimasa TAKAHASHI ,  Kenya YAMASHITA ,  Masahiro HAGIO ,  Kazuyuki SAWADA

IPC分类号： H01L21/265

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US20070058156A1

公开(公告)日：2007-03-15

申请号：US10575379

申请日：2004-09-15

申请人： Toshiyuki Ando ,  Yoshihito Hirano ,  Hiroshi Sakamaki ,  Toshio Wakayama ,  Syumpei Kameyama ,  Masashi Furuta ,  Masahiro Hagio

发明人： Toshiyuki Ando ,  Yoshihito Hirano ,  Hiroshi Sakamaki ,  Toshio Wakayama ,  Syumpei Kameyama ,  Masashi Furuta ,  Masahiro Hagio

IPC分类号： G01P3/36 ,  G01N21/00

CPC分类号： G01S17/95 ,  G01P5/26 ,  G01S7/497 ,  G01S17/102 ,  G01S17/58 ,  Y02A90/19

摘要： A light wave radar apparatus includes a frequency deviation detecting unit 12 for detecting a frequency deviation fchirp of a light signal, and a weighted average processing unit 13 for determining a systematic error ΔVoffset from the frequency deviation fchirp detected by the frequency deviation detecting unit 12, and subtracts the systematic error ΔVoffset from a wind velocity Vw calculated by a Doppler signal processing unit 11. As a result, the light wave radar apparatus can carry out a measurement of the wind velocity Vw with a high degree of precision.

摘要翻译： 光波雷达装置包括用于检测光信号的频率偏差啁啾信号的频率偏差检测单元12和用于确定系统误差ΔV偏移量的加权平均处理单元13， 从频率偏差检测单元12检测到的频率偏差f啁啾中减去与风速V 的系统误差DeltaV偏移 >由多普勒信号处理单元11计算。 结果，光波雷达装置可以高精度地进行风速V＆lt; W＆gt;的测量。