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    Semiconductor device and production method therefor
    1.
    发明授权
    Semiconductor device and production method therefor 有权
    半导体装置及其制造方法

    公开(公告)号：US07816688B2

    公开(公告)日：2010-10-19

    申请号：US10494616

    申请日：2002-11-27

    申请人： Kenya Yamashita ,  Makoto Kitabatake ,  Kunimasa Takahashi ,  Osamu Kusumoto ,  Masao Uchida ,  Ryoko Miyanaga

    发明人： Kenya Yamashita ,  Makoto Kitabatake ,  Kunimasa Takahashi ,  Osamu Kusumoto ,  Masao Uchida ,  Ryoko Miyanaga

    IPC分类号： H01L29/51

    CPC分类号： H01L21/28185 ,  H01L21/049 ,  H01L21/28202 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/7838

    摘要： An upper part of a SIC substrate 1 is oxidized at a temperature of 800 to 1400° C., inclusive, in an oxygen atmosphere at 1.4×102 Pa or less, thereby forming a first insulating film 2 which is a thermal oxide film of 20 nm or less in thickness. Thereafter, annealing is performed, and then a first cap layer 3, which is a nitride film of about 5 nm in thickness, is formed thereon by CVD. A second insulating film 4, which is an oxide film of about 130 nm in thickness, is deposited thereon by CVD. A second cap layer 5, which is a nitride film of about 10 nm in thickness, is formed thereon. In this manner, a gate insulating film 6 made of the first insulating film 2 through the second cap layer 5 is formed, thus obtaining a low-loss highly-reliable semiconductor device.

    摘要翻译： SIC基板1的上部在氧气气氛中在800〜1400℃的温度下氧化，在1.4×102Pa以下，由此形成作为热氧化膜的第一绝缘膜2 nm以下的厚度。 然后，进行退火，然后通过CVD在其上形成厚度为约5nm的氮化物膜的第一盖层3。 作为厚度约130nm的氧化物膜的第二绝缘膜4通过CVD沉积在其上。 在其上形成厚度为约10nm的氮化膜的第二盖层5。 以这种方式，形成通过第二盖层5由第一绝缘膜2制成的栅极绝缘膜6，从而获得低损耗高可靠性的半导体器件。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06995397B2

    公开(公告)日：2006-02-07

    申请号：US10466353

    申请日：2002-09-17

    申请人： Kenya Yamashita ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Masao Uchida ,  Ryoko Miyanaga

    发明人： Kenya Yamashita ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Masao Uchida ,  Ryoko Miyanaga

    IPC分类号： H01L31/072

    CPC分类号： H01L29/66068 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/7725 ,  H01L29/7828 ,  H01L29/7838

    摘要： A semiconductor device having an accumulation channel SiC-MISFET structure includes a p-type SiC layer 10 formed on an SiC substrate, an n-type channel layer 20, a gate insulating film 11, a gate electrode 12, and n-type source and drain layers 13a and 13b. The channel layer 20 includes an undoped layer 22 and a δ doped layer 21 which is formed in the vicinity of the lower end of the undoped layer 22. Since the channel layer 20 includes the high-concentration δ doped layer 21 in its deeper portion, the electric field in the surface region of the channel layer is weakened, thereby allowing the current driving force to increase.

    摘要翻译： 具有堆积通道SiC-MISFET结构的半导体器件包括形成在SiC衬底上的p型SiC层10，n型沟道层20，栅极绝缘膜11，栅电极12和n型源， 漏极层13a和13b。 沟道层20包括未掺杂层22和形成在未掺杂层22的下端附近的δ掺杂层21.由于沟道层20在其较深部分包括高浓度δ掺杂层21， 沟道层的表面区域的电场减弱，从而允许电流驱动力增加。

    Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate
    4.
    发明授权
    Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate 失效
    碳化硅基板及其制造方法以及使用该基板的半导体装置

    公开(公告)号：US06270573B1

    公开(公告)日：2001-08-07

    申请号：US09297129

    申请日：1999-04-26

    申请人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi

    发明人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi

    IPC分类号： C30B2518

    CPC分类号： H01L29/1608 ,  C30B23/02 ,  C30B29/36 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/66068 ,  Y10S117/913 ,  Y10T428/12576 ,  Y10T428/12674

    摘要： A silicon carbide thin film is epitaxially grown by an MBE or the like method with silicon atoms 2 being maintained to be in excess of carbon atoms on a growth surface 1a of a silicon carbide crystal in a substrate 1. A silicon carbide substrate with a good crystallinity is thereby achieved at a low temperature with a good reproducibility. This crystal growth is possible at a low temperature of 1300° C. or lower, and the productions of a high-concentration doped film, a selectively grown film, and a grown film of a cubic silicon carbide on a hexagonal crystal are achieved. In crystallizing a cubic silicon carbide on a hexagonal crystal, the use of an off-cut surface inclined towards a direction is effective to prevent an occurrence of twin.

    摘要翻译： 通过在基板1中的碳化硅晶体的生长面1a上保持硅原子2保持为超过碳原子的MBE等外观生长碳化硅薄膜。具有良好的碳化硅基板 从而在低温下实现了结晶度的良好的再现性。 可以在1300℃以下的低温下进行晶体生长，可以实现六方晶的高浓度掺杂膜，选择性生长膜和立方碳化硅生长膜的制备。 在六方晶上结晶立方碳化硅时，使用朝向<1 {overscore（1）} 00>方向倾斜的偏斜表面是有效的，以防止双胞胎发生。

    Method for manufacturing silicon carbide semiconductor element
    7.
    发明授权
    Method for manufacturing silicon carbide semiconductor element 有权
    碳化硅半导体元件的制造方法

    公开(公告)号：US07718519B2

    公开(公告)日：2010-05-18

    申请号：US12302372

    申请日：2008-03-27

    申请人： Kunimasa Takahashi ,  Chiaki Kudou

    发明人： Kunimasa Takahashi ,  Chiaki Kudou

    IPC分类号： H01L21/265

    CPC分类号： H01L29/7802 ,  H01L21/046 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068

    摘要： A method of producing a silicon carbide semiconductor device, including: step (A) of forming an impurity-doped region by implanting impurity ions 3 into at least a portion of a silicon carbide layer 2 formed on a first principal face of a silicon carbide substrate 1 having first and second principal faces; step (B) of forming capping layers 6 having thermal resistance on at least an upper face 2a of the silicon carbide layer 2 and on at least a second principal face 12a of the silicon carbide substrate 1; and step (C) of performing an activation annealing treatment by heating the silicon carbide layer 2 at a predetermined temperature.

    摘要翻译： 一种制造碳化硅半导体器件的方法，包括：通过将杂质离子3注入形成在碳化硅衬底的第一主面上的碳化硅层2的至少一部分中来形成杂质掺杂区域的步骤（A） 1具有第一和第二主面; 在至少在碳化硅层2的上表面2a上形成具有耐热性的覆盖层6和在碳化硅衬底1的至少第二主面12a上的步骤（B）; 以及通过在预定温度下加热碳化硅层2进行活化退火处理的步骤（C）。

    Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
    8.
    发明授权
    Silicon carbide-oxide layered structure, production method thereof, and semiconductor device 有权
    碳化硅 - 氧化物层状结构体及其制造方法以及半导体装置

    公开(公告)号：US07709403B2

    公开(公告)日：2010-05-04

    申请号：US10956078

    申请日：2004-10-04

    申请人： Kenya Yamashita ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Masao Uchida ,  Ryoko Miyanaga

    发明人： Kenya Yamashita ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Masao Uchida ,  Ryoko Miyanaga

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L29/518 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/513 ,  H01L29/66068 ,  H01L29/7827 ,  H01L29/7828

    摘要： A gate insulating film which is an oxide layer mainly made of SiO2 is formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100° C. and lower than 1250° C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.

    摘要翻译： 通过热氧化在碳化硅衬底上形成作为主要由SiO 2形成的氧化物层的栅极绝缘膜，然后将所得结构在室内的惰性气体气氛中退火。 然后，将碳化硅 - 氧化物层叠体置于具有真空泵的室内，在高于1100℃且低于1250℃的高温下暴露于减压NO气体气氛中，由此氮气扩散 在栅极绝缘膜上。 结果，获得了包含氧化物层的V族元素的栅绝缘膜，其下部包括高氮浓度区域，并且其相对介电常数为3.0或更高。 含V族元素的氧化物层和碳化硅层之间的界面区域的界面态密度降低。