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    Method of making BIOMEMS devices
    5.
    发明授权
    Method of making BIOMEMS devices 有权
    制作BIOMEMS设备的方法

    公开(公告)号：US07927904B2

    公开(公告)日：2011-04-19

    申请号：US12651561

    申请日：2010-01-04

    申请人： Luc Ouellet ,  Stephane Martel

    发明人： Luc Ouellet ,  Stephane Martel

    IPC分类号： H01L21/8238

    CPC分类号： B81C1/00071 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0191 ,  B82Y30/00 ,  G03F7/0752 ,  G03F7/165 ,  Y10T428/24802

    摘要： A MEMS device is manufactured by first forming a self-aligned monolayer (SAM) on a carrier wafer. Next, a first polymer layer is formed on the self-aligned monolayer. The first polymer layer is patterned form a microchannel cover, which is then bonded to a patterned second polymer layer on a device wafer to form microchannels. The carrier wafer is then released from the first polymer layer.

    摘要翻译： 通过首先在载体晶片上形成自对准单层（SAM）来制造MEMS器件。 接下来，在自对准单层上形成第一聚合物层。 将第一聚合物层图案化成微通道盖，然后将其与装置晶片上的图案化的第二聚合物层结合以形成微通道。 然后从第一聚合物层释放载体晶片。

    Method of making MEMS wafers
    6.
    发明授权
    Method of making MEMS wafers 有权
    制造MEMS晶圆的方法

    公开(公告)号：US07807550B2

    公开(公告)日：2010-10-05

    申请号：US11424059

    申请日：2006-06-14

    申请人： Luc Ouellet ,  Mamur Chowdhury

    发明人： Luc Ouellet ,  Mamur Chowdhury

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： B81C1/00301 ,  B81B2207/07 ,  B81B2207/095 ,  B81C2203/0118 ,  H01L21/76898

    摘要： A wafer level package for a MEMS device is made by bonding a MEMS wafer and a lid wafer together to form a hermetically sealed cavity. One or more vias filled with conductive or semiconductive material is etched one of the wafers to form one or more rods extending through the wafer. The rods provide electrical connection to components within the hermetically sealed cavity.

    摘要翻译： 用于MEMS器件的晶片级封装通过将MEMS晶片和盖晶片结合在一起以形成密封腔体而制成。 填充有导电或半导体材料的一个或多个通孔蚀刻晶片之一以形成延伸穿过晶片的一个或多个棒。 这些杆提供电气连接到密封腔内的部件。

    Fabrication of MEMS devices with spin-on glass
    7.
    发明授权
    Fabrication of MEMS devices with spin-on glass 有权
    用旋涂玻璃制造MEMS器件

    公开(公告)号：US07579622B2

    公开(公告)日：2009-08-25

    申请号：US11054946

    申请日：2005-02-11

    申请人： Luc Ouellet

    发明人： Luc Ouellet

    IPC分类号： H01L29/04

    CPC分类号： B81C1/00619 ,  G03F7/094 ,  H01L21/32137 ,  H01L21/32139 ,  Y10T428/24479

    摘要： A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.

    摘要翻译： 在MEMS器件的制造中制造蚀刻结构的方法包括沉积容易产生表面粗糙度的通常为多晶硅的体层。 在本体层上形成至少一层光不敏感的旋涂平面化材料，例如基于硅酸盐的旋涂玻璃，以降低表面粗糙度。 用光致抗蚀剂层图案化。 然后通过光致抗蚀剂层进行深刻蚀到体层中。 这种技术导致更精确的蚀刻结构。

    Anhydrous HF release of process for MEMS devices
    8.
    发明授权
    Anhydrous HF release of process for MEMS devices 有权
    无水HF释放的MEMS器件工艺

    公开(公告)号：US07365016B2

    公开(公告)日：2008-04-29

    申请号：US11314535

    申请日：2005-12-22

    申请人： Luc Ouellet ,  Ghislain Migneault ,  Jun Li

    发明人： Luc Ouellet ,  Ghislain Migneault ,  Jun Li

    IPC分类号： H01L21/302

    CPC分类号： B81C1/00936 ,  B81C1/00476 ,  B81C2201/0132 ,  H01L21/31116

    摘要： A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performing an in-situ vacuum evaporation of etch by-products at a temperature of more than about 100° C. and at vacuum level lower than the 40 Torr without exposure to ambient air.

    摘要翻译： 蚀刻覆盖蚀刻阻挡氮化硅衬底的牺牲氧化物层的方法包括在小于约100℃和/或低于40乇的真空度下将牺牲氧化物暴露于无水HF。 并且随后在大于约100℃的温度下进行蚀刻副产物的原位真空蒸发，并且在不暴露于环境空气的情况下在低于40托的真空度下进行真空蒸发。

    Fabrication of advanced silicon-based MEMS devices
    9.
    发明授权
    Fabrication of advanced silicon-based MEMS devices 有权
    先进的硅基MEMS器件的制造

    公开(公告)号：US07160752B2

    公开(公告)日：2007-01-09

    申请号：US11242960

    申请日：2005-10-05

    申请人： Luc Ouellet ,  Robert Antaki

    发明人： Luc Ouellet ,  Robert Antaki

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

    摘要： A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

    摘要翻译： 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。

    Method of fabricating silicon-based MEMS devices
    10.
    发明授权
    Method of fabricating silicon-based MEMS devices 有权

    公开(公告)号：US07144750B2

    公开(公告)日：2006-12-05

    申请号：US10459619

    申请日：2003-06-12

    申请人： Luc Ouellet ,  Robert Antaki

    发明人： Luc Ouellet ,  Robert Antaki

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

    摘要： A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.