公开(公告)号：US5360946A

公开(公告)日：1994-11-01

申请号：US761182

申请日：1991-09-17

Applicant: Claudius Feger ,  Teresita O. Graham ,  Kurt R. Grebe ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Michael J. Palmer ,  Nelson R. Tanner ,  Ho-Ming Tong ,  Charles H. Wilson ,  Helen L. Yeh

Inventor： Claudius Feger ,  Teresita O. Graham ,  Kurt R. Grebe ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Michael J. Palmer ,  Nelson R. Tanner ,  Ho-Ming Tong ,  Charles H. Wilson ,  Helen L. Yeh

IPC: H01L21/60 ,  H01L21/48 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01R12/04 ,  H05K1/11 ,  H05K3/00 ,  H05K3/28 ,  H05K3/34 ,  H05K3/36 ,  H01R9/09

CPC classification number: H01L24/45 ,  H01L21/481 ,  H01L23/49572 ,  H01L23/49894 ,  H01L24/85 ,  H05K3/363 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/351 ,  H05K2201/10681 ,  H05K2201/10977 ,  H05K2203/176 ,  H05K3/0017 ,  H05K3/3452 ,  Y10T29/49121 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: The present invention relates to an improved flex (or TAB) product suitable for silicon carrier or other types of chip carrier applications, wherein the flex reliability problems caused for example by Cu thermal cycling are substantially reduced or eliminated. More particularly, the invention embodies a number of coatings for use in such products and diverse methods of making and using same.

Abstract translation: 本发明涉及适用于硅载体或其它类型的芯片载体应用的改进的柔性（或TAB）产品，其中例如通过Cu热循环引起的柔性可靠性问题被显着地减少或消除。 更具体地，本发明体现了用于这种产品中的许多涂层以及制造和使用它们的各种方法。

公开(公告)号：US5038195A

公开(公告)日：1991-08-06

申请号：US477705

申请日：1990-02-09

Applicant: William D. Brewer ,  Kurt R. Grebe ,  Raymond R. Horton ,  Linda C. Matthew ,  Ismail C. Noyan ,  Michael J. Palmer ,  Sampath Purushothaman ,  David L. Rath

Inventor： William D. Brewer ,  Kurt R. Grebe ,  Raymond R. Horton ,  Linda C. Matthew ,  Ismail C. Noyan ,  Michael J. Palmer ,  Sampath Purushothaman ,  David L. Rath

IPC: H01L21/60 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50 ,  H05K1/00 ,  H05K1/09 ,  H05K3/24

CPC classification number: H05K3/244 ,  H01L21/4846 ,  H01L23/49866 ,  H05K1/09 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0393 ,  Y10T428/1291

Abstract: The present invention comprises the use of a copper/nickel containing alloy composition or application of a protective nickel alloy coating to copper current-carrying leads to prevent electrolytic migration between tape automated bonding (TAB) package leads.

公开(公告)号：US5480841A

公开(公告)日：1996-01-02

申请号：US302084

申请日：1994-09-07

Applicant: Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

Inventor： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

IPC: H01L23/02 ,  H01L23/10 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H05K3/34 ,  H01L21/60

CPC classification number: H05K3/3426 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49572 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/48464 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K2201/10568 ,  H05K2201/10681 ,  H05K2201/10689 ,  Y02P70/613

Abstract: A process of providing an external wiring and connecting package for a semiconductor chip wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that may include a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

Abstract translation: 提供用于半导体芯片的外部布线和连接封装的工艺，其中芯片是封装强度的主要贡献者。 外部触点和布线由多层布线构件提供，多层布线构件可以包括在导体层上的嵌入式电源总线层的网格接地面，用于扩展失配控制和阻抗控制，保护封装覆盖从布线导体到芯片的接合，以及 外部接触连接通过接触构件使用熔融金属。

公开(公告)号：US5462628A

公开(公告)日：1995-10-31

申请号：US232417

申请日：1994-04-25

Applicant: Alfred Viehbeck ,  Martin Goldberg ,  Stephen L. Tisdale ,  Stephen L. Buchwalter ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew

Inventor： Alfred Viehbeck ,  Martin Goldberg ,  Stephen L. Tisdale ,  Stephen L. Buchwalter ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew

IPC: C23C18/20 ,  C08J5/12 ,  C08J7/00 ,  C23C18/16 ,  C23C18/28 ,  H05K3/38 ,  B32B31/00

CPC classification number: C23C18/1608 ,  C23C18/166 ,  C23C18/2086 ,  C23C18/28 ,  C23C18/30 ,  H05K3/381 ,  Y10S525/903

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

Abstract translation: 某些有机聚合材料能够可逆地接受或捐赠来自还原剂的电子。 聚合物中的氧化还原位点接受电子，结果发生聚合物的性质变化。 该改变可用于改性或蚀刻聚合物材料。 可以通过在受控的深度将金属种子并入材料中来修饰材料。 种子通过金属阳离子与聚合物中的氧化还原位点的相互作用而引入，这导致阳离子还原形成中性金属种子。 随后将含有种子的聚合材料暴露于无电镀浴中，导致具有对聚合物材料具有良好粘附性的所需特性的金属的进一步沉积。 聚合物材料的蚀刻可以作为聚合物在非质子传递溶剂中当其氧化还原位点已经接受电子时的溶解度增加的结果进行。 增加的溶解度允许在已经还原的聚合物材料的某些区域中蚀刻开口，留下其它区域不变。

公开(公告)号：US5374454A

公开(公告)日：1994-12-20

申请号：US13652

申请日：1993-02-04

Applicant: Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

Inventor： Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC: C08J3/24 ,  C23C18/20 ,  C23C18/28 ,  C25D5/56 ,  H05K1/03 ,  H05K3/18 ,  H05K3/38 ,  H05K3/42 ,  B05D1/00

CPC classification number: H05K3/422 ,  C23C18/208 ,  C23C18/2093 ,  C23C18/30 ,  C25D5/56 ,  H05K3/381 ,  H05K1/034 ,  H05K3/181 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24339 ,  Y10T428/24802 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31678

Abstract: A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

Abstract translation: 将卤化聚合物材料暴露于还原剂和/或电解质和施加的电压以使得能够被金属化并被蚀刻的暴露部分。 暴露部分也可以被掺杂从而在其中诱导电导率。 此外，提供了含有独立卤代聚合物层和在其上的导电图案的新结构。

公开(公告)号：US5242713A

公开(公告)日：1993-09-07

申请号：US290486

申请日：1988-12-23

Applicant: Alfred Viehbeck ,  Stephen L. Buchwalter ,  William A. Donson ,  John J. Glenning ,  Martin J. Goldberg ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Mark J. Schadt ,  Michael R. Scheuermann ,  Stephen L. Tisdale

Inventor： Alfred Viehbeck ,  Stephen L. Buchwalter ,  William A. Donson ,  John J. Glenning ,  Martin J. Goldberg ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Mark J. Schadt ,  Michael R. Scheuermann ,  Stephen L. Tisdale

IPC: C23C18/20 ,  C08J5/12 ,  C08J7/00 ,  C23C18/16 ,  C23C18/28 ,  H05K3/38

CPC classification number: C23C18/1608 ,  C23C18/166 ,  C23C18/2086 ,  C23C18/28 ,  C23C18/30 ,  H05K3/381 ,  Y10S525/903

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

公开(公告)号：US5546655A

公开(公告)日：1996-08-20

申请号：US329066

申请日：1994-10-25

Applicant: Claudius Feger ,  Teresita O. Graham ,  Kurt R. Grebe ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Michael J. Palmer ,  Nelson R. Tanner ,  Ho-Ming Tong ,  Charles H. Wilson ,  Helen L. Yeh

Inventor： Claudius Feger ,  Teresita O. Graham ,  Kurt R. Grebe ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Michael J. Palmer ,  Nelson R. Tanner ,  Ho-Ming Tong ,  Charles H. Wilson ,  Helen L. Yeh

IPC: H01L21/60 ,  H01L21/48 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01R12/04 ,  H05K1/11 ,  H05K3/00 ,  H05K3/28 ,  H05K3/34 ,  H05K3/36 ,  H05K3/02

CPC classification number: H01L24/45 ,  H01L21/481 ,  H01L23/49572 ,  H01L23/49894 ,  H01L24/85 ,  H05K3/363 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/351 ,  H05K2201/10681 ,  H05K2201/10977 ,  H05K2203/176 ,  H05K3/0017 ,  H05K3/3452 ,  Y10T29/49121 ,  Y10T29/49155 ,  Y10T29/49165

Abstract: A flex or TAB product suitable for chip carrier applications wherein the flex reliability problems caused by copper dendrite growth and lead bending during power and thermal cycling are reduced by application of special coatings to lead areas of the flex tape.

Abstract translation: 适用于芯片载体应用的柔性或TAB产品，其中在功率和热循环期间由铜枝晶生长和引线弯曲引起的柔性可靠性问题通过将特殊涂层施加到柔性带的引导区域来减少。

公开(公告)号：US5399902A

公开(公告)日：1995-03-21

申请号：US026427

申请日：1993-03-04

Applicant: Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

Inventor： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

IPC: H01L23/02 ,  H01L23/10 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H05K3/34 ,  H01L49/00 ,  H01L23/48 ,  H01L27/04 ,  H01L29/44

CPC classification number: H05K3/3426 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49572 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/48464 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K2201/10568 ,  H05K2201/10681 ,  H05K2201/10689 ,  Y02P70/613

Abstract: A semiconductor chip package wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that has a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

Abstract translation: 半导体芯片封装，其中芯片是封装强度的主要贡献者。 外部触点和布线由多层布线构件提供，多层布线构件具有在导体层上的嵌入式电力总线层的网状接地面，用于扩展失配控制和阻抗控制，保护封装覆盖从布线导体到芯片的接合，外部 接触连接通过接触构件采用熔融金属。

公开(公告)号：US5268815A

公开(公告)日：1993-12-07

申请号：US922257

申请日：1992-07-30

Applicant: Thomas M. Cipolla ,  Paul W. Coteus ,  Brian C. Derdall ,  Christina M. Knoedler ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Lawrence S. Mok ,  Irene A. Sterian

Inventor： Thomas M. Cipolla ,  Paul W. Coteus ,  Brian C. Derdall ,  Christina M. Knoedler ,  Alphonso P. Lanzetta ,  John J. Liutkus ,  Linda C. Matthew ,  Lawrence S. Mok ,  Irene A. Sterian

IPC: H01L25/10 ,  H05K3/30 ,  H05K7/02 ,  H05K7/20

CPC classification number: H05K7/023 ,  H01L25/105 ,  H05K3/301 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/0002 ,  Y10T29/53265

Abstract: A high density circuit package includes a pair of planar packages, the planar packages exhibiting front and back surfaces and positioned back-to-back in the high density circuit package. Each planar package includes a flexible circuit carrier having a plurality of circuit chips mounted thereon. Front and back planar metallic heat sinks sandwich the circuit carriers, at least one of the heat sinks contacting a surface of the chips mounted on the sandwiched circuit carriers. Each heat sink is provided with air flow apertures formed in its planar surface and adjacent to each circuit chip. A circuit card interconnects with the circuit carriers in an interconnection region and is pluggable into a female connector. The planar metallic heat sinks and circuit carriers are mechanically packaged so as to provide a planar arrangement which aligns the apertures in both the front and rear heat sinks. A pair of planar packages are mechanically connected in a back-to-back arrangement so that the apertures therebetween are aligned. The associated circuit cards are also back-to-back oriented so as to enable their joint interconnection into the female connector.

Abstract translation: 高密度电路封装包括一对平面封装，平面封装呈现前后表面并且背对背设置在高密度电路封装中。 每个平面封装包括具有安装在其上的多个电路芯片的柔性电路载体。 前后平面金属散热器夹着电路载体，至少一个散热片接触安装在夹层电路载体上的芯片表面。 每个散热器设置有形成在其平面表面中并与每个电路芯片相邻的气流孔。 电路卡与互连区域中的电路载体互连，并且可插入到母连接器中。 平面金属散热器和电路载体被机械地封装，以便提供一个平面布置，其对准前后散热片中的孔。 一对平面封装以背对背布置机械连接，使得它们之间的孔对准。 相关联的电路卡也是背靠背定向的，以便使它们的连接互连到母连接器中。

公开(公告)号：US5203955A

公开(公告)日：1993-04-20

申请号：US705648

申请日：1991-05-24

Applicant: Aldred Viehbeck ,  Stephen L. Buchwalter ,  John J. Glenning ,  Martin J. Goldberg ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Stephen L. Tisdale

Inventor： Aldred Viehbeck ,  Stephen L. Buchwalter ,  John J. Glenning ,  Martin J. Goldberg ,  Caroline A. Kovac ,  Linda C. Matthew ,  Walter P. Pawlowski ,  Stephen L. Tisdale

IPC: C23C18/16 ,  C23C18/28 ,  H05K3/38

CPC classification number: C23C18/2086 ,  C23C18/1608 ,  C23C18/30 ,  C23C18/36 ,  C23C18/405 ,  H05K3/381 ,  C25D5/022

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons. The increased solubility allows openings to be etched in certain areas of the polymeric material that have been reduced, leaving other areas unchanged.

Abstract translation: 某些有机聚合材料能够可逆地接受或捐赠来自还原剂的电子。 聚合物中的氧化还原位点接受电子，结果发生聚合物的性质变化。 该改变可用于改性或蚀刻聚合物材料。 可以通过在受控的深度将金属种子并入材料中来修饰材料。 种子通过金属阳离子与聚合物中的氧化还原位点的相互作用而引入，这导致阳离子还原形成中性金属种子。 随后将含有种子的聚合材料暴露于无电镀浴中，导致具有对聚合物材料具有良好粘附性的所需特性的金属的进一步沉积。 聚合物材料的蚀刻可以作为聚合物在非质子传递溶剂中当其氧化还原位点已经接受电子时的溶解度增加的结果进行。 增加的溶解度允许在已经还原的聚合物材料的某些区域中蚀刻开口，留下其它区域不变。