公开(公告)号：US08435379B2

公开(公告)日：2013-05-07

申请号：US11745451

申请日：2007-05-08

Applicant: Vineet Mehta ,  Karl Brown ,  John A. Pipitone ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Keith A. Miller ,  Vijay D. Parkhe

Inventor： Vineet Mehta ,  Karl Brown ,  John A. Pipitone ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Keith A. Miller ,  Vijay D. Parkhe

IPC: H01L21/306

CPC classification number: B08B7/0035 ,  C25F7/00 ,  H01J37/32009 ,  H01J37/32541 ,  H01L21/02046 ,  H01L21/0206

Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.

Abstract translation: 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。

公开(公告)号：US20120149192A1

公开(公告)日：2012-06-14

申请号：US13223788

申请日：2011-09-01

Applicant: KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

Inventor： KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

IPC: H01L21/768

CPC classification number: C23C14/046 ,  C23C14/185 ,  C23C14/3492

Abstract: Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

Abstract translation: 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

公开(公告)号：US20100071625A1

公开(公告)日：2010-03-25

申请号：US12542501

申请日：2009-08-17

Applicant: KARL BROWN

Inventor： KARL BROWN

IPC: C23C16/458

CPC classification number: C23C14/564 ,  H01J37/3408 ,  H01J37/3447

Abstract: A shutter disk having a tuned coefficient of thermal expansion is provided herein. In some embodiments, a shutter disk having a tuned coefficient of thermal expansion may include a body formed from a first material comprising at least two components, wherein a ratio of each of the at least two components to one another is selected to provide a coefficient of thermal expansion of the body that is substantially similar to a coefficient of thermal expansion of a second material to be deposited atop the body.

Abstract translation: 本文提供具有调节的热膨胀系数的快门盘。 在一些实施例中，具有调谐的热膨胀系数的快门盘可以包括由包括至少两个部件的第一材料形成的主体，其中所述至少两个部件中的每一个彼此的比率被选择以提供系数 主体的热膨胀基本上类似于要沉积在身体顶部的第二材料的热膨胀系数。

公开(公告)号：US07513971B2

公开(公告)日：2009-04-07

申请号：US10387948

申请日：2003-03-12

Applicant: Karl Brown ,  Vineet Mehta ,  See-Eng Phan

Inventor： Karl Brown ,  Vineet Mehta ,  See-Eng Phan

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321

Abstract: An RF coil for a plasma etch chamber is provided in which the RF coil is substantially flat over a portion of at least one turn of the coil. In one embodiment, each turn of the coil is substantially flat over a majority of each turn. In one embodiment of the present inventions, each turn of the coil is substantially flat over approximately 300 degrees of the turn. In the final approximate 60 degrees of the turn, the coil is sloped down to the next turn. Each turn thus comprises a substantially flat portion in combination with a sloped portion interconnecting the turn to the next adjacent turn. In one embodiment, the RF coil having turns with substantially flat portions is generally cylindrical. Other shapes are contemplated such as a dome shape. In some applications such as an RF plasma etch reactor, it is believed that providing an RF coil having turns comprising flat portions with sloped portions interconnecting the flat portions can improve uniformity of the etch process.

Abstract translation: 提供了一种用于等离子体蚀刻室的RF线圈，其中RF线圈在线圈的至少一圈的一部分上基本上是平坦的。 在一个实施例中，线圈的每个匝在每匝的大部分上基本平坦。 在本发明的一个实施例中，线圈的每一圈在转弯的大约300度处基本平坦。 在最终大约60度的转弯中，线圈向下倾斜到下一回合。 因此，每个转弯包括基本平坦的部分，与将转弯相互连接到下一个相邻转弯的倾斜部分组合。 在一个实施例中，具有基本平坦部分的匝的RF线圈通常为圆柱形。 可以想到其它形状，例如圆顶形状。 在诸如RF等离子体蚀刻反应器的一些应用中，据信提供具有包括平坦部分的匝的RF线圈，其具有互连平坦部分的倾斜部分可以提高蚀刻工艺的均匀性。

公开(公告)号：US07480129B2

公开(公告)日：2009-01-20

申请号：US11221169

申请日：2005-09-07

Applicant: Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

Inventor： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  Y10T279/23

Abstract: A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

Abstract translation: 可拆卸的静电卡盘可以附接到处理室中的基座。 静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。 卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。 突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。 具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

公开(公告)号：US07252737B2

公开(公告)日：2007-08-07

申请号：US10819891

申请日：2004-04-06

Applicant: Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

Inventor： Karl Brown ,  Vineet Mehta ,  See-Eng Phan ,  Semyon Sherstinsky ,  Allen Lau

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/321 ,  H01J37/32623

Abstract: Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

Abstract translation: 通常，提供了用于支撑衬底的衬底支撑构件。 在一个实施例中，用于支撑衬底的衬底支撑构件包括联接到下屏蔽的主体。 主体具有适于支撑基板和下表面的上表面。 下屏蔽件具有中心部分和唇部。 唇缘设置在身体的径向外侧并朝向由第一表面限定的平面突出。 唇缘与身体间隔开设置。 下屏蔽适于与设置在处理室中的上屏蔽接口以限定基本上防止等离子体迁移到构件下方的迷宫间隙。 在另一个实施例中，下屏蔽为等离子体提供短的RF接地返回路径。

公开(公告)号：US20060169578A1

公开(公告)日：2006-08-03

申请号：US11140513

申请日：2005-05-25

Applicant: Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

Inventor： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC: C23C14/00 ,  C23C14/32

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

Abstract translation: 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

公开(公告)号：US20060073690A1

公开(公告)日：2006-04-06

申请号：US11052012

申请日：2005-02-03

Applicant: Karl Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl Brown ,  John Pipitone ,  Vineet Mehta

IPC: H01L21/44

CPC classification number: H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

Abstract: Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

Abstract translation: 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

公开(公告)号：US06620296B2

公开(公告)日：2003-09-16

申请号：US09905263

申请日：2001-07-13

Applicant: James Van Gogh ,  Jim Thompson ,  Marc Schweitzer ,  Yoichiro Tanaka ,  Alan Liu ,  Anthony CT Chan ,  Karl Brown ,  John C. Forster

Inventor： James Van Gogh ,  Jim Thompson ,  Marc Schweitzer ,  Yoichiro Tanaka ,  Alan Liu ,  Anthony CT Chan ,  Karl Brown ,  John C. Forster

IPC: C23C1434

CPC classification number: H01J37/3423 ,  C23C14/3407 ,  C23C14/564

Abstract: An apparatus for a physical vapor deposition system includes a target having a sidewall having an undercut thereon defining a net erosion area and a net redeposition area.

公开(公告)号：US08846451B2

公开(公告)日：2014-09-30

申请号：US13178870

申请日：2011-07-08

Applicant: Alan Ritchie ,  Karl Brown ,  John Pipitone

Inventor： Alan Ritchie ,  Karl Brown ,  John Pipitone

IPC: H01L21/4763 ,  H01L21/44 ,  H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  C23C14/34 ,  C23C14/04 ,  C23C14/35 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56

CPC classification number: H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

Abstract: Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

Abstract translation: 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。