公开(公告)号：US09856558B2

公开(公告)日：2018-01-02

申请号：US12077067

申请日：2008-03-14

Applicant: Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

Inventor： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  C23C14/50 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

公开(公告)号：US09593411B2

公开(公告)日：2017-03-14

申请号：US13614704

申请日：2012-09-13

Applicant: Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

Inventor： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  C23C14/50

CPC classification number: C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract translation: 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US20130008778A1

公开(公告)日：2013-01-10

申请号：US13614704

申请日：2012-09-13

Applicant: DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

Inventor： DANIEL J. HOFFMAN ,  KARL M. BROWN ,  YING RUI ,  JOHN PIPITONE

IPC: C23C14/54 ,  C23C14/50 ,  C23C14/14 ,  C23C14/34

CPC classification number: C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract translation: 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US20120028461A1

公开(公告)日：2012-02-02

申请号：US13178870

申请日：2011-07-08

Applicant: Alan Ritchie ,  Karl Brown ,  John Pipitone

Inventor： Alan Ritchie ,  Karl Brown ,  John Pipitone

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  C23C14/046 ,  C23C14/34 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/354 ,  C23C16/503 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3408 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

Abstract: Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.

Abstract translation: 本文提供了在基板上形成的高纵横比特征中沉积金属的方法。 在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够 以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些， 以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

公开(公告)号：US07820020B2

公开(公告)日：2010-10-26

申请号：US11140513

申请日：2005-05-25

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC: C23C14/00

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

Abstract translation: 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

公开(公告)号：US20090045046A1

公开(公告)日：2009-02-19

申请号：US11893355

申请日：2007-08-15

Applicant: John Pipitone ,  Ryan Nunn-Gage

Inventor： John Pipitone ,  Ryan Nunn-Gage

IPC: C23C14/34

CPC classification number: C23C14/3471 ,  C23C14/54 ,  C23C14/564 ,  H01J37/32091 ,  H01J37/32174

Abstract: A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining an arc detection threshold lying above a noise level. The method further includes comparing each transient with the threshold determined for the corresponding power applicator or wafer support surface, and issuing an arc detect flag if the transient exceeds the threshold.

Abstract translation: 在多个RF功率施加器和晶片支撑表面中的每个处的等离子体反应器中的晶片处理期间响应于电压或电流瞬变的方法。 对于每个处理步骤，并且对于每个功率施加器和晶片支撑表面，该方法包括确定高于噪声水平的电弧检测阈值。 该方法还包括将每个瞬态值与为相应的功率施加器或晶片支撑表面确定的阈值进行比较，以及如果瞬态超过阈值则发出电弧检测标志。

公开(公告)号：US07268076B2

公开(公告)日：2007-09-11

申请号：US11052012

申请日：2005-02-03

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: H01L21/44

CPC classification number: H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

Abstract: Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

Abstract translation: 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

公开(公告)号：US08512526B2

公开(公告)日：2013-08-20

申请号：US11222248

申请日：2005-09-07

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.

Abstract translation: 等离子体增强的物理气相沉积方法，其中除了还施加到目标的DC电压之外，VHF功率被施加到溅射靶，VHF功率电平为3.5kW或更大，使得DC目标功率可以是 降低到小于500W，同时仍然获得非常高的离子分数（超过50％），允许非常小的工件到目标间距不超过工件直径的分数（7/30），以增强离子化分数 在整个过程区域。

公开(公告)号：US20120149192A1

公开(公告)日：2012-06-14

申请号：US13223788

申请日：2011-09-01

Applicant: KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

Inventor： KARL BROWN ,  ALAN RITCHIE ,  JOHN PIPITONE ,  YING RUI ,  DANIEL J. HOFFMAN

IPC: H01L21/768

CPC classification number: C23C14/046 ,  C23C14/185 ,  C23C14/3492

Abstract: Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

Abstract translation: 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

公开(公告)号：US07750644B2

公开(公告)日：2010-07-06

申请号：US11893352

申请日：2007-08-15

Applicant: John Pipitone ,  Ryan Nunn-Gage

Inventor： John Pipitone ,  Ryan Nunn-Gage

IPC: H01H9/50 ,  C23C14/34

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3299

Abstract: A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe.

Abstract translation: 一种用于处理晶片的等离子体反应器系统，其中各个比较器耦合到相应的RF瞬态传感器，所述RF瞬态传感器依次耦合到相应的RF功率应用点。 比较器有各自的比较阈值。 该系统进一步包括控制器，该控制器被编程为利用针对处理配方的不同步骤的各自更新的阈值来更新比较器的相应阈值。