Wafer chucking system for advanced plasma ion energy processing systems
    2.
    发明授权
    Wafer chucking system for advanced plasma ion energy processing systems 有权
    用于先进等离子体离子能量处理系统的晶片夹紧系统

    公开(公告)号:US09435029B2

    公开(公告)日:2016-09-06

    申请号:US13193299

    申请日:2011-07-28

    IPC分类号: H01J37/32 C23C16/50 C23C14/34

    摘要: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

    摘要翻译: 公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统,方法和装置。 一种示例性方法包括将衬底放置在等离子体室中,在等离子体室中形成等离子体,可控制地将功率切换到衬底,以便向衬底施加周期性电压功能,并且在周期性电压函数的多个周期内调制, 所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布,以便以时间平均的方式实现所需的离子能量分布。

    SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM
    3.
    发明申请
    SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM 有权
    用于校准切换模式离子能量分配系统的系统和方法

    公开(公告)号:US20140062303A1

    公开(公告)日:2014-03-06

    申请号:US13597032

    申请日:2012-08-28

    IPC分类号: H05H1/46

    摘要: Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.

    摘要翻译: 公开了用于调节离子能量和离子能量分布以及校准偏压源和等离子体处理室的系统,方法和装置。 一种示例性方法包括将周期性电压函数应用于负载仿真器,负载仿真器模拟等离子体负载的电特性和相关联的电子设备例如电动卡盘。 可以测量负载仿真器的各种电气参数,并与偏置源产生的预期参数进行比较。 测量值和预期值之间的差异可用于识别和纠正偏置电源,腔室或用于点燃和维持等离子体的电源的故障和异常。 一旦偏置电源被校准,可以通过测量和计算包括衬底支撑件和任选的衬底的串联和并联电容的有效电容来校准腔室。

    Methods for depositing metal in high aspect ratio features
    4.
    发明授权
    Methods for depositing metal in high aspect ratio features 有权
    在高宽比特征中沉积金属的方法

    公开(公告)号:US08563428B2

    公开(公告)日:2013-10-22

    申请号:US13223788

    申请日:2011-09-01

    IPC分类号: H01L21/44

    摘要: Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.

    摘要翻译: 本文提供了以高纵横比特征沉积金属的方法。 在一些实施例中,处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体,使用等离子体溅射来自靶的金属原子 同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分,将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上,施加第一RF功率以在 至少一些沉积的金属原子从开口的底表面和上表面到侧壁,并且重新沉积重新分布过程,直到第一金属层沉积在开口的基本上所有的表面上。

    SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION OF A PROJECTED PLASMA
    5.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION OF A PROJECTED PLASMA 有权
    用于控制投影等离子体的能量分配的系统,方法和装置

    公开(公告)号:US20120217221A1

    公开(公告)日:2012-08-30

    申请号:US13193345

    申请日:2011-07-28

    摘要: Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber via a remotely generated ionizing electromagnetic field that extends into the plasma chamber from a remote projected source, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

    摘要翻译: 公开了用于调节等离子体室中的离子能量的系统,方法和装置。 一种示例性方法包括将基板放置在等离子体室中,通过远程产生的电离电磁场在等离子体室中形成等离子体,该离子化电磁场从远程投影源延伸到等离子体室中,可控制地将功率切换到基板,以便施加周期性 电压功能到基板,并且在周期性电压函数的多个周期中调制周期性电压函数,其响应于衬底表面处的离子能量的期望分布,以便在一段时间内实现所需的离子能量分布 依据。

    Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems
    6.
    发明申请
    Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems 有权
    用于先进等离子体离子能量处理系统的晶圆卡盘系统

    公开(公告)号:US20120052599A1

    公开(公告)日:2012-03-01

    申请号:US13193299

    申请日:2011-07-28

    摘要: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

    摘要翻译: 公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统,方法和装置。 一种示例性方法包括将衬底放置在等离子体室中,在等离子体室中形成等离子体,可控制地将功率切换到衬底,以便向衬底施加周期性电压功能,并且在周期性电压函数的多个周期内调制, 所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布,以便以时间平均的方式实现所需的离子能量分布。

    SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION
    8.
    发明申请
    SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION 有权
    用于控制离子能量分布的系统,方法和装置

    公开(公告)号:US20110259851A1

    公开(公告)日:2011-10-27

    申请号:US12870837

    申请日:2010-08-29

    摘要: Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

    摘要翻译: 公开了用于调节等离子体室中的离子能量的系统,方法和装置。 一种示例性方法包括将衬底放置在等离子体室中,在等离子体室中形成等离子体,可控制地将功率切换到衬底,以便向衬底施加周期性电压功能,并且在周期性电压函数的多个周期内调制, 所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布,以便以时间平均的方式实现所需的离子能量分布。

    Plasma reactor with a multiple zone thermal control feed forward control apparatus
    10.
    发明授权
    Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
    具有多区域热控制前馈控制装置的等离子体反应器

    公开(公告)号:US08012304B2

    公开(公告)日:2011-09-06

    申请号:US11408559

    申请日:2006-04-21

    摘要: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

    摘要翻译: 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源,用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面,以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型,其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源,该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。