公开(公告)号：US07820020B2

公开(公告)日：2010-10-26

申请号：US11140513

申请日：2005-05-25

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC: C23C14/00

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber having an atomic weight substantially less than the atomic weight of copper, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma, and accelerating copper ions of the wafer sputtering plasma in a direction normal to a surface of the wafer support pedestal.

Abstract translation: 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 所述室将原料重量比原子重量小得多的真空室引入到真空室中，将目标溅射等离子体保持在靶材上，以产生包含铜原子和铜离子中的至少一种的流 目标朝向用于气相沉积的晶片支撑基座，通过将等离子体RF源功率电容耦合到晶片溅射等离子体，将晶圆溅射等离子体沿着垂直于晶片溅射等离子体的方向 晶片支撑座的表面。

公开(公告)号：US07268076B2

公开(公告)日：2007-09-11

申请号：US11052012

申请日：2005-02-03

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: H01L21/44

CPC classification number: H01L21/2855 ,  C23C14/345 ,  C23C14/354 ,  H01J37/32706 ,  H01J37/3408 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76865

Abstract: Physical vapor deposition and re-sputtering of a barrier layer in an integrated circuit is performed by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into said vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

Abstract translation: 在集成电路中的阻挡层的物理气相沉积和再溅射通过在室的顶部附近提供金属靶和在腔室的地板附近面向靶的晶片支撑台座来执行。 将工艺气体引入所述真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

公开(公告)号：US07399943B2

公开(公告)日：2008-07-15

申请号：US11052011

申请日：2005-02-03

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: B23K10/00

CPC classification number: H01J37/3405 ,  C23C14/046 ,  C23C14/352 ,  H01J37/32082

Abstract: A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

Abstract translation: 等离子体反应器包括真空室，该真空室包括侧壁，天花板和在室底部附近的晶片支撑基座，以及耦合到该室的真空泵。 工艺气体入口连接到腔室和连接到工艺气体入口的工艺气体源。 反应器还包括在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座并具有适于激发动电子的频率的RF等离子体源功率发生器，以及RF等离子体偏置 发电机耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

公开(公告)号：US08562798B2

公开(公告)日：2013-10-22

申请号：US11222231

申请日：2005-09-07

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.

Abstract translation: 物理气相沉积反应器包括金属溅射靶，耦合到金属溅射靶的直流溅射功率源和面向金属溅射靶的晶片支撑基座。 可移动磁体阵列与金属溅射靶的与晶片支撑基座相对的一侧相邻。 固体金属RF馈送杆接合金属溅射靶并且在与晶片支撑基座相对的一侧上从靶的表面延伸。 VHF阻抗匹配电路耦合到与金属溅射靶相对的RF馈电杆的端部以及耦合到所述VHF阻抗匹配电路的VHF RF发电发生器。 优选地，反应器还包括中心轴，可动磁体阵列围绕该中心轴可旋转，中心轴具有轴向延伸的中空通道，RF馈送杆延伸穿过通道。

公开(公告)号：US08062484B2

公开(公告)日：2011-11-22

申请号：US11222230

申请日：2005-09-07

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: C23C14/00

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.

Abstract translation: 在等离子体反应器的真空室中的集成电路上进行铜的物理蒸镀的方法包括：在室的顶板附近设置铜靶，将集成电路晶片放置在面向靶的晶片支撑台上，引入 载气进入真空室，并通过向铜靶施加直流电力，同时通过对铜靶施加甚高频电源建立等离子体电离分数，在晶片上建立沉积速率。 该方法还可以包括通过将HF或LF功率耦合到晶片来促进铜在晶片上的垂直表面上的再溅射。 该方法优选地包括维持目标磁场并扫描目标上的目标磁场。

公开(公告)号：US08512526B2

公开(公告)日：2013-08-20

申请号：US11222248

申请日：2005-09-07

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: C23C14/00 ,  C23C14/32 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  H01B11/02 ,  H01B11/06 ,  H02G3/04 ,  H05K1/09

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A plasma-enhanced physical vapor deposition method in which VHF power is applied to the sputter target in addition to a D.C. voltage that is also applied to the target, the VHF power level being 3.5 kW or greater, so that the D.C. target power may be reduced to less than 500 W while still attaining a very high ion fraction (in excess of 50%), permitting a very small workpiece-to-target spacing not exceeding a fraction (7/30) of the workpiece diameter to enhance the ionization fraction throughout the process region.

Abstract translation: 等离子体增强的物理气相沉积方法，其中除了还施加到目标的DC电压之外，VHF功率被施加到溅射靶，VHF功率电平为3.5kW或更大，使得DC目标功率可以是 降低到小于500W，同时仍然获得非常高的离子分数（超过50％），允许非常小的工件到目标间距不超过工件直径的分数（7/30），以增强离子化分数 在整个过程区域。

公开(公告)号：US07244344B2

公开(公告)日：2007-07-17

申请号：US11140514

申请日：2005-05-25

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei W. Wang ,  Semyon Sherstinsky

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann ,  Wei W. Wang ,  Semyon Sherstinsky

IPC: C23C14/35

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A physical vapor deposition plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, a process gas inlet coupled to the chamber and a process gas source coupled to the process gas inlet, a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency in a range between about 60 MHz and 81 MHz, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

Abstract translation: 物理气相沉积等离子体反应器包括真空室，其包括侧壁，天花板和靠近室底部的晶片支撑基座，以及耦合到该室的真空泵，耦合到该室的工艺气体入口和工艺气体源 耦合到处理气体入口，在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座的RF等离子体源功率发生器，其频率在约60MHz和 81MHz，以及RF等离子体偏置功率发生器，其耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

公开(公告)号：US07214619B2

公开(公告)日：2007-05-08

申请号：US11052010

申请日：2005-02-03

Applicant: Karl M. Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl M. Brown ,  John Pipitone ,  Vineet Mehta

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  C23C14/046 ,  C23C14/35 ,  C23C14/351 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76865

Abstract: A barrier layer is formed in an integrated circuit by providing a metal target near a ceiling of the chamber and a wafer support pedestal facing the target near a floor of the chamber. A process gas is introduced into the vacuum chamber. A target-sputtering plasma is maintained at the target to produce a stream of principally neutral atoms flowing from the target toward the wafer for vapor deposition. A wafer-sputtering plasma is maintained near the wafer support pedestal to produce a stream of sputtering ions toward the wafer support pedestal for re-sputtering. The sputtering ions are accelerated across a plasma sheath at the wafer in a direction normal to a surface of the wafer to render the sputter etching highly selective for horizontal surfaces.

Abstract translation: 在集成电路中通过在室的顶部附近提供金属靶并且在室的底部附近面向靶的晶片支撑台座，在集成电路中形成阻挡层。 将工艺气体引入真空室。 目标溅射等离子体保持在目标上以产生从目标流向晶片的主要中性原子的气流用于气相沉积。 在晶片支撑基座附近保持晶片溅射等离子体，以产生朝向晶片支撑基座的溅射离子流，用于再溅射。 溅射离子在垂直于晶片表面的方向上在晶片处跨越等离子体护套加速，以使溅射蚀刻对于水平表面具有高选择性。

公开(公告)号：US20060191876A1

公开(公告)日：2006-08-31

申请号：US11222248

申请日：2005-09-07

Applicant: Karl Brown ,  John Pipitone ,  Vineet Mehta

Inventor： Karl Brown ,  John Pipitone ,  Vineet Mehta

IPC: B23K15/00

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: The invention concerns a method of performing physical vapor deposition in a reactor chamber on a workpiece positioned on a workpiece support facing the metal sputter target. The method includes sputtering atoms from the metal sputter target by applying a low level of target bias power to the metal sputter target to produce a correspondingly low metal deposition rate on the workpiece. The method further includes ionizing the atoms sputtered from the metal sputter target to an ionization fraction in excess of about 50% by applying a high level of VHF source power to the metal sputter target through a solid large diameter RF feed rod that engages the metal sputter target. The low level of target bias power can be as low as about 500 Watts although it may range up to about 2500 Watts. Preferably, the target bias power is D.C. power. The RF feed rod may be threadably engaged into a receptacle in the center of a top surface of the metal sputter target. Preferably, the method further includes electrostatically clamping the workpiece to the workpiece support.

Abstract translation: 本发明涉及在位于面向金属溅射靶的工件支架上的工件上的反应器室中进行物理气相沉积的方法。 该方法包括通过向金属溅射靶施加低水平的目标偏压功率来从金属溅射靶溅射原子，以在工件上产生相应较低的金属沉积速率。 该方法还包括通过将金属溅射物质接合的固体大直径RF进料棒，通过向金属溅射靶施加高水平的VHF源功率，将从金属溅射靶溅射的原子离子化成电离分数超过约50％ 目标。 目标偏置功率的低水平可以低至约500瓦，尽管其范围可高达约2500瓦。 优选地，目标偏置功率为直流功率。 RF馈送杆可以螺纹地接合在金属溅射靶的顶表面的中心的插座中。 优选地，该方法还包括将工件静电夹持到工件支撑件。

公开(公告)号：US20060172536A1

公开(公告)日：2006-08-03

申请号：US11140544

申请日：2005-05-25

Applicant: Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

Inventor： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC: H01L21/44

CPC classification number: H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

Abstract: A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, and maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma. The frequency of the RF source power is sufficiently high to limit ion energy near the surface of the wafer so that the principal portion of the power provides plasma ion generation. The method further includes maintaining the RF source power at a sufficiently high level to deposit a conformal layer of copper on vertical and horizontal surfaces of the workpiece.

Abstract translation: 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 将载气引入真空室，将目标溅射等离子体保持在目标处，以产生包含从目标流向晶片支撑基座的铜原子和铜离子中的至少一种的气流，用于气相沉积，并保持 通过将等离子体RF源功率电容耦合到晶片溅射等离子体，在晶片支撑基座附近的晶片溅射等离子体。 RF源功率的频率足够高以限制晶片表面附近的离子能量，使得功率的主要部分提供等离子体离子产生。 该方法还包括将RF源功率保持在足够高的水平以将铜的共形层沉积在工件的垂直和水平表面上。