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    Detachable electrostatic chuck for supporting a substrate in a process chamber
    1.
    发明授权
    Detachable electrostatic chuck for supporting a substrate in a process chamber 有权
    用于在处理室中支撑基板的可拆卸静电卡盘

    公开(公告)号：US07480129B2

    公开(公告)日：2009-01-20

    申请号：US11221169

    申请日：2005-09-07

    Applicant: Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

    Inventor： Karl Brown ,  Semyon Sherstinsky ,  Wei W. Wang ,  Cheng-Hsiung Tsai ,  Vineet Mehta ,  Allen Lau ,  Steve Sansoni

    IPC: H01L21/683

    CPC classification number: H01L21/6831 ,  Y10T279/23

    Abstract: A detachable electrostatic chuck can be attached to a pedestal in a process chamber. The electrostatic chuck has an electrostatic puck comprising a dielectric covering at least one electrode and a frontside surface to receive a substrate. A backside surface of the chuck has a central protrusion that can be a D-shaped mesa to facilitate alignment with a mating cavity in the pedestal. The protrusion can also have asymmetrically offset apertures, which further assist alignment, and also serve to receive electrode terminal posts and a gas tube. A heat transfer plate having an embedded heat transfer fluid channel is spring loaded on the pedestal to press against the chuck for good heat transfer.

    Abstract translation: 可拆卸的静电卡盘可以附接到处理室中的基座。 静电吸盘具有包括覆盖至少一个电极和前侧表面的电介质的静电压盘，用于接收衬底。 卡盘的背面具有可以是D形台面的中心突起，以便于与基座中的配合腔体对准。 突起还可以具有不对称偏移的孔，其进一步辅助对准，并且还用于接收电极端子柱和气体管。 具有嵌入式传热流体通道的传热板弹簧加载在基座上以压靠卡盘以获得良好的热传递。

    APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE
    2.
    发明申请
    APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE 有权
    实现等离子体空间密集度的设备

    公开(公告)号：US20130153412A1

    公开(公告)日：2013-06-20

    申请号：US13327689

    申请日：2011-12-15

    Applicant: ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

    Inventor： ALAN RITCHIE ,  DONNY YOUNG ,  KEITH A. MILLER ,  MUHAMMAD RASHEED ,  STEVE SANSONI ,  Uday Pai

    IPC: C23C14/34

    CPC classification number: C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

    Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

    Abstract translation: 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

    Method and apparatus for sputter etch conditioning a ceramic body
    3.
    发明授权
    Method and apparatus for sputter etch conditioning a ceramic body 失效
    用于溅射蚀刻调节陶瓷体的方法和装置

    公开(公告)号：US06395157B2

    公开(公告)日：2002-05-28

    申请号：US09159009

    申请日：1998-09-23

    Applicant: Nitin Khurana ,  Vince Burkhart ,  Steve Sansoni ,  Vijay Parkhe ,  Eugene Tzou

    Inventor： Nitin Khurana ,  Vince Burkhart ,  Steve Sansoni ,  Vijay Parkhe ,  Eugene Tzou

    IPC: C23C1434

    CPC classification number: H01J37/32862 ,  H01J37/32082 ,  H01J37/34

    Abstract: A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

    Abstract translation: 一种用于在处理室具有真空泵，阳极和阴极时调节处理室中陶瓷体表面的方法和装置。 调节方法包括将真空泵泵送到真空，将气体引入室内，用RF功率激励阳极和阴极，将气体点燃到等离子体中，用等离子体离子溅射刻蚀表面 去除污染物。 该方法可以在处理室内完成，以便现场处理陶瓷卡盘或在清洁室内调节任何形式的陶瓷体或部件。

    Apparatus for enabling concentricity of plasma dark space
    4.
    发明授权
    Apparatus for enabling concentricity of plasma dark space 有权
    用于实现等离子体暗室的同心度的装置

    公开(公告)号：US08702918B2

    公开(公告)日：2014-04-22

    申请号：US13327689

    申请日：2011-12-15

    Applicant: Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    Inventor： Alan Ritchie ,  Donny Young ,  Keith A. Miller ,  Muhammad Rasheed ,  Steve Sansoni ,  Uday Pai

    IPC: C23C14/56

    CPC classification number: C23C14/34 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3441

    Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

    Abstract translation: 在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得 在支撑构件和密封环以及密封环和目标组件之间形成密封件。

    Coating for reducing contamination of substrates during processing
    6.
    发明授权
    Coating for reducing contamination of substrates during processing 有权
    用于减少加工过程中底物污染的涂层

    公开(公告)号：US07824498B2

    公开(公告)日：2010-11-02

    申请号：US10786876

    申请日：2004-02-24

    Applicant: Vijay D. Parkhe ,  Kurt J. Ahmann ,  Matthew C. Tsai ,  Steve Sansoni

    Inventor： Vijay D. Parkhe ,  Kurt J. Ahmann ,  Matthew C. Tsai ,  Steve Sansoni

    IPC: C23C16/00 ,  H01L21/306 ,  H01L21/683 ,  C23F1/00 ,  B23B31/38

    CPC classification number: C23C16/463 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

    Abstract: A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.

    Abstract translation: 衬底支撑件具有支撑结构，并且在具有碳 - 氢网络的支撑结构上具有涂层。 涂层具有摩擦系数小于约0.3，硬度至少约8GPa的接触表面。 涂层的接触表面能够减少与接触表面接触的基底的磨损和污染。 在一个版本中，支撑结构具有覆盖电极的电介质。 电介质上的多个台面具有其上具有接触表面的涂层。

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