知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.019 seconds)

    Conductive metal oxide structures in non volatile re writable memory devices
    1.
    发明授权
    Conductive metal oxide structures in non volatile re writable memory devices 有权
    非易失性可重写存储器件中的导电金属氧化物结构

    公开(公告)号：US08565006B2

    公开(公告)日：2013-10-22

    申请号：US13719106

    申请日：2012-12-18

    Applicant: Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    Inventor： Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    IPC: G11C13/00

    CPC classification number: H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

    Abstract translation: 公开了包括与导电金属氧化物（CMO）接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物，导电二元氧化物，多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场，可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。 存储器单元可以包括与存储元件电串联的非欧姆器件（NOD）。 存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间，该衬底层在衬底上制造，该衬底包括用于数据的有源电路 对数组层进行操作。

    Conductive metal oxide structures in non volatile re writable memory devices
    3.
    发明授权
    Conductive metal oxide structures in non volatile re writable memory devices 有权
    非易失性可重写存储器件中的导电金属氧化物结构

    公开(公告)号：US08320161B2

    公开(公告)日：2012-11-27

    申请号：US13252932

    申请日：2011-10-04

    Applicant: Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    Inventor： Lawrence Schloss ,  Julie Casperson Brewer ,  Wayne Kinney ,  Rene Meyer

    IPC: G11C11/21

    CPC classification number: H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

    Abstract translation: 公开了包括与导电金属氧化物（CMO）接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物，导电二元氧化物，多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场，可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。 存储器单元可以包括与存储元件电串联的非欧姆器件（NOD）。 存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间，该衬底层在衬底上制造，该衬底包括用于数据的有源电路 对数组层进行操作。

    Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements
    5.
    发明申请
    Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements 审中-公开
    用于促进增强的循环耐久性的结构和方法访问可重写的非易失性两个终端存储器元件

    公开(公告)号：US20130043452A1

    公开(公告)日：2013-02-21

    申请号：US13210342

    申请日：2011-08-15

    Applicant: Rene Meyer ,  Jian Wu ,  Julie Casperson Brewer

    Inventor： Rene Meyer ,  Jian Wu ,  Julie Casperson Brewer

    IPC: H01L45/00 ,  H01L21/8239

    CPC classification number: H01L27/2463 ,  H01L27/101 ,  H01L45/08 ,  H01L45/147 ,  H01L45/1616

    Abstract: Structures and methods to enhance cycling endurance of BEOL memory elements are disclosed. In some embodiments, a memory element can include a support layer having a smooth and planar upper surface as deposited or as created by additional processing. A first electrode is formed the smooth and planar upper surface. The support layer can be configured to influence the formation of the first electrode to determine a substantially smooth surface of the first electrode. The memory element is formed over the first electrode having the substantially smooth surface, the memory element including one or more layers of an insulating metal oxide (IMO) operative to exchange ions to store a plurality of resistive states. The substantially smooth surface of the first electrode provides for uniform current densities through unit cross-sectional areas of the IMO. The memory element can include one or more layers of a conductive metal oxide (CMO).

    Abstract translation: 公开了增强BEOL存储元件的循环耐久性的结构和方法。 在一些实施例中，存储元件可以包括具有沉积的平滑和平坦的上表面的支撑层，或者通过附加处理产生的支撑层。 第一电极形成平滑且平坦的上表面。 支撑层可以被配置为影响第一电极的形成，以确定第一电极的基本平滑的表面。 存储元件形成在具有基本平滑表面的第一电极之上，存储元件包括一层或多层绝缘金属氧化物（IMO），其可操作以交换离子以存储多个电阻状态。 第一电极的基本平滑的表面通过IMO的单元横截面区域提供均匀的电流密度。 存储元件可以包括一层或多层导电金属氧化物（CMO）。

    NON VOLATILE MEMORY DEVICE ION BARRIER
    7.
    发明申请
    NON VOLATILE MEMORY DEVICE ION BARRIER 有权
    非易失性存储器件隔离器

    公开(公告)号：US20120037879A1

    公开(公告)日：2012-02-16

    申请号：US13281335

    申请日：2011-10-25

    Applicant: LAWRENCE SCHLOSS ,  RENE MEYER ,  WAYNE KINNEY ,  ROY LAMBERTSON ,  JULIE CASPERSON BREWER

    Inventor： LAWRENCE SCHLOSS ,  RENE MEYER ,  WAYNE KINNEY ,  ROY LAMBERTSON ,  JULIE CASPERSON BREWER

    IPC: H01L45/00

    CPC classification number: G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

    Abstract: An ion barrier layer made from a dielectric material in contact with an electronically insulating layer is operative to prevent mobile ions transported into the electronically insulating layer from passing through the ion barrier layer and into adjacent layers during data operations on a non-volatile memory cell. A conductive oxide layer in contact with the electronically insulating layer is the source of the mobile ions. A programming data operation is operative to transport a portion of the mobile ions into the electronically insulating layer and an erase data operation is operative to transport the mobile ions back into the conductive oxide layer. When the portion is positioned in the electronically insulating layer the memory cell stores data as a programmed conductivity profile and when a substantial majority of the mobile ions are positioned in the conductive oxide layer the memory cell stores data as an erased conductivity profile.

    Abstract translation: 由与电绝缘层接触的介电材料制成的离子阻挡层可操作以防止在对非易失性存储单元的数据操作期间传输到电绝缘层中的移动离子通过离子阻挡层并进入相邻层。 与电绝缘层接触的导电氧化物层是可移动离子的源。 编程数据操作用于将一部分移动离子传输到电绝缘层中，并且擦除数据操作可操作以将移动离子传输回到导电氧化物层中。 当该部分位于电绝缘层中时，存储单元将数据存储为编程电导率分布，并且当大部分移动离子位于导电氧化物层中时，存储单元将数据存储为擦除的电导率分布。

    Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices
    8.
    发明申请
    Conductive Metal Oxide Structures In Non Volatile Re Writable Memory Devices 有权
    导电金属氧化物结构在非易失性可重写存储器件

    公开(公告)号：US20120026780A1

    公开(公告)日：2012-02-02

    申请号：US13252932

    申请日：2011-10-04

    Applicant: LAWRENCE SCHLOSS ,  JULIE CASPERSON BREWER ,  WAYNE KINNEY ,  RENE MEYER

    Inventor： LAWRENCE SCHLOSS ,  JULIE CASPERSON BREWER ,  WAYNE KINNEY ,  RENE MEYER

    IPC: G11C11/00 ,  H01L45/00

    CPC classification number: H01L45/085 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76

    Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

    Abstract translation: 公开了包括与导电金属氧化物（CMO）接触的电解绝缘体的存储元件的存储单元。 CMO包括晶体结构并且可以包含烧绿石氧化物，导电二元氧化物，多个B位钙钛矿和Ruddlesden-Popper结构。 CMO包括可以响应于施加在电解绝缘体和CMO上施加的写入电压产生的适当幅度和方向的电场，可以将其输送到电解绝缘体/从电解绝缘体传输的移动离子。 存储器单元可以包括与存储元件电串联的非欧姆器件（NOD）。 存储器单元可以位于单层存储器中的两端交叉点存储器阵列中的导电阵列线的交叉点或多个垂直堆叠的存储器层之间，该衬底层在衬底上制造，该衬底包括用于数据的有源电路 对数组层进行操作。

    Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells
    10.
    发明申请
    Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells 审中-公开
    存储器和形成方法，以增强非易失性两端存储单元的可扩展性

    公开(公告)号：US20110151617A1

    公开(公告)日：2011-06-23

    申请号：US12653895

    申请日：2009-12-18

    Applicant: Julie Casperson Brewer

    Inventor： Julie Casperson Brewer

    IPC: H01L21/16

    CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C2013/0073 ,  G11C2213/71

    Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to scale memory elements, such as implemented in BEOL third dimensional memory technology, independent of operational characteristics. In at least some embodiments, a method to fabricate a non-volatile two-terminal memory device includes depositing a first electrode at a first temperature in a first region in relation to a substrate (e.g., a silicon wafer) that includes active circuitry that was previously fabricated FEOL on the substrate, fabricating a memory element coupled to the first electrode, and optionally, forming at least a portion of a non-ohmic device electrically coupled with the memory element. Further, the method can include depositing a second electrode at a second temperature in a second region in relation to the substrate. In some embodiments, the second temperature is approximately equal to or greater than the first temperature.

    Abstract translation: 本发明的实施例一般涉及半导体和存储器技术，更具体地涉及系统，集成电路和用于缩放存储元件的方法，诸如在BEOL第三维存储器技术中实现的，与操作特性无关。 在至少一些实施例中，制造非易失性双端存储器件的方法包括相对于衬底（例如，硅晶片）在第一区域中的第一温度下沉积第一电极，该衬底包括有源电路 在衬底上预先制造的FEOL，制造耦合到第一电极的存储元件，以及可选地形成与存储元件电耦合的非欧姆器件的至少一部分。 此外，该方法可以包括在相对于衬底的第二区域中在第二温度下沉积第二电极。 在一些实施例中，第二温度近似等于或大于第一温度。

Patent Agency Ranking