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    Nitride semiconductor template and method of manufacturing the same
    1.
    发明授权
    Nitride semiconductor template and method of manufacturing the same 有权
    氮化物半导体模板及其制造方法

    公开(公告)号：US08648387B2

    公开(公告)日：2014-02-11

    申请号：US12650465

    申请日：2009-12-30

    Applicant: Jenq-Dar Tsay ,  Po-Chun Liu

    Inventor： Jenq-Dar Tsay ,  Po-Chun Liu

    IPC: H01L31/102 ,  H01L21/20 ,  H01L21/36

    CPC classification number: H01L21/02639 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

    Abstract: A nitride semiconductor template and a manufacturing method thereof are provided. The nitride semiconductor template includes a carrier substrate with a first thermal expansion coefficient, a nitride semiconductor layer with a second thermal expansion coefficient different from the first thermal expansion coefficient, and a bonding layer. The nitride semiconductor layer disposed on the carrier substrate is at least 10 μm in thickness. A ratio of a dislocation density of the nitride semiconductor layer at a first surface to that at a second surface is from 0.1 to 10. The bonding layer is disposed between the carrier substrate and the nitride semiconductor layer to adhere the nitride semiconductor layer onto the carrier substrate. The second surface is near an interface between the nitride semiconductor layer and the bonding layer, and the first surface is 10 μm from the second surface.

    Abstract translation: 提供一种氮化物半导体模板及其制造方法。 氮化物半导体模板包括具有第一热膨胀系数的载体衬底，具有与第一热膨胀系数不同的第二热膨胀系数的氮化物半导体层和结合层。 设置在载体基板上的氮化物半导体层的厚度至少为10μm。 氮化物半导体层在第一表面和第二表面处的位错密度的比率为0.1至10.粘合层设置在载体基板和氮化物半导体层之间，以将氮化物半导体层粘附到载体上 基质。 第二表面靠近氮化物半导体层和接合层之间的界面，并且第一表面距离第二表面10μm。

    Island submount and a method thereof
    4.
    发明授权
    Island submount and a method thereof 有权
    岛基座及其方法

    公开(公告)号：US07868346B2

    公开(公告)日：2011-01-11

    申请号：US11948464

    申请日：2007-11-30

    Applicant: Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

    Inventor： Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

    IPC: H01L33/48

    CPC classification number: H05K3/4007 ,  H01L33/486 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/111 ,  H05K1/113 ,  H05K2201/09045 ,  H05K2201/10106 ,  Y10T29/49155 ,  H01L2224/05599

    Abstract: An island submount used for carrying at least one light-emitting element having at least one electrical contact. The island submount includes a substrate, at least one island structure having a top surface and an inclined surface, and a conductive layer. The island structure is located on the substrate and corresponds to the electrical contact. The conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact. The island submount is capable of enhancing the light extraction efficiency of the light-emitting element, and avoids the energy loss due to re-absorption when the light emerging from below the light-emitting element is reflected back to the light-emitting element.

    Abstract translation: 用于承载至少一个具有至少一个电触头的发光元件的岛基座。 岛基座包括基板，具有顶表面和倾斜表面的至少一个岛结构和导电层。 岛结构位于基板上并对应于电接触。 导电层形成在岛状结构的表面上，并且至少覆盖顶表面，从而与电触点电连接。 岛基座能够增强发光元件的光提取效率，并且当从发光元件下方出射的光被反射回发光元件时，可以避免由于再吸收而导致的能量损失。

    Fabricating method of nitride semiconductor substrate and composite material substrate
    5.
    发明授权
    Fabricating method of nitride semiconductor substrate and composite material substrate 失效
    氮化物半导体衬底和复合材料衬底的制造方法

    公开(公告)号：US07687378B2

    公开(公告)日：2010-03-30

    申请号：US11467167

    申请日：2006-08-25

    Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    IPC: H01L21/20

    CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

    Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

    Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

    Light emitting diode and fabrication method thereof
    7.
    发明授权
    Light emitting diode and fabrication method thereof 有权
    发光二极管及其制造方法

    公开(公告)号：US07358537B2

    公开(公告)日：2008-04-15

    申请号：US11069567

    申请日：2005-03-02

    Applicant: Wen-Yung Yeh ,  Jenq-Dar Tsay ,  Chang-Cheng Chuo ,  Jung-Tsung Hsu ,  Jim-Yong Chi

    Inventor： Wen-Yung Yeh ,  Jenq-Dar Tsay ,  Chang-Cheng Chuo ,  Jung-Tsung Hsu ,  Jim-Yong Chi

    IPC: H01L29/22

    CPC classification number: H01L33/22

    Abstract: A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor layer and the p-type semiconductor layer respectively. An AlGaInN thick film is on the LED chip, and the AlGaInN thick film has an oblique side and a textured top surface.

    Abstract translation: 发光二极管（LED）。 LED包括包括n型半导体层，有源层和p型半导体层的LED芯片。 n型欧姆接触电极和p型欧姆接触电极分别与n型半导体层和p型半导体层电接触。 AlGaInN厚膜在LED芯片上，并且AlGaInN厚膜具有斜边和纹理化的顶表面。

    FABRICATING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND COMPOSITE MATERIAL SUBSTRATE
    8.
    发明申请
    FABRICATING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND COMPOSITE MATERIAL SUBSTRATE 失效
    氮化物半导体衬底和复合材料衬底的制备方法

    公开(公告)号：US20080006849A1

    公开(公告)日：2008-01-10

    申请号：US11467167

    申请日：2006-08-25

    Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    IPC: H01L29/76 ,  H01L29/745

    CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

    Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

    Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

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