A nitride semiconductor template and a manufacturing method thereof are provided. The nitride semiconductor template includes a carrier substrate with a first thermal expansion coefficient, a nitride semiconductor layer with a second thermal expansion coefficient different from the first thermal expansion coefficient, and a bonding layer. The nitride semiconductor layer disposed on the carrier substrate is at least 10 μm in thickness. A ratio of a dislocation density of the nitride semiconductor layer at a first surface to that at a second surface is from 0.1 to 10. The bonding layer is disposed between the carrier substrate and the nitride semiconductor layer to adhere the nitride semiconductor layer onto the carrier substrate. The second surface is near an interface between the nitride semiconductor layer and the bonding layer, and the first surface is 10 μm from the second surface.