公开(公告)号：US07558301B2

公开(公告)日：2009-07-07

申请号：US11803583

申请日：2007-05-15

Applicant: Kuo-Jui Lin ,  Tung-Wei Chi ,  Kun-Feng Lin ,  Chih-Ming Lai

Inventor： Kuo-Jui Lin ,  Tung-Wei Chi ,  Kun-Feng Lin ,  Chih-Ming Lai

IPC: H01S3/10 ,  H01S5/00

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/4087

Abstract: A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Abstract translation: 提供了一种多波长半导体激光器阵列及其制造方法。 具有不同发射波长的堆叠量子点有源区的激光谐振器与制造工艺一起使用，以改变每个激光谐振器或上电极层的长度，以产生不同的激光振荡条件，使得每个激光谐振器产生 单波长带激光器在特定量子点有源区域中，从而实现能够产生多个激光波长的多波长半导体激光器阵列。

公开(公告)号：US20080151950A1

公开(公告)日：2008-06-26

申请号：US11803583

申请日：2007-05-15

Applicant: Kuo-Jui Lin ,  Tung-Wei Chi ,  Kun-Feng Lin ,  Chih-Ming Lai

Inventor： Kuo-Jui Lin ,  Tung-Wei Chi ,  Kun-Feng Lin ,  Chih-Ming Lai

IPC: H01S5/40 ,  H01L21/00

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/4087

Abstract: A multiwavelength semiconductor laser array and a method of fabricating the same are provided. Laser resonators having stacked quantum dot active regions of different emission wavelengths are utilized together with a fabricating process to change the length of each laser resonator or that of an upper electrode layer to generate different laser oscillation conditions, such that each of the laser resonators generates a single-wavelength band laser in a specific quantum dot active region, thereby achieving a multiwavelength semiconductor laser array capable of generating multiple laser wavelengths.

Abstract translation: 提供了一种多波长半导体激光器阵列及其制造方法。 具有不同发射波长的堆叠量子点有源区的激光谐振器与制造工艺一起使用，以改变每个激光谐振器或上电极层的长度，以产生不同的激光振荡条件，使得每个激光谐振器产生 单波长带激光器在特定量子点有源区域中，从而实现能够产生多个激光波长的多波长半导体激光器阵列。

公开(公告)号：US08221547B2

公开(公告)日：2012-07-17

申请号：US12177167

申请日：2008-07-22

Applicant: Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

Inventor： Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

IPC: B32B3/10 ,  C30B25/04

CPC classification number: C30B25/18 ,  C30B29/403 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.

Abstract translation: 提供了用于形成氮化物半导体衬底的初始衬底结构。 初始衬底结构包括衬底，图案化外延层和掩模层。 图案化的外延层位于基板上并且由多个柱形成。 掩模层位于衬底上并覆盖图案化外延层的一部分。 掩模层包括多个棒，并且在棒之间存在空间。 空间暴露图案化外延层的上表面的一部分。

公开(公告)号：US20120119220A1

公开(公告)日：2012-05-17

申请号：US13355108

申请日：2012-01-20

Applicant: Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

Inventor： Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

IPC: H01L29/20

CPC classification number: C30B25/02 ,  C23C14/0005 ,  C23C14/021 ,  C23C14/0617 ,  C23C16/01 ,  C23C16/0227 ,  C23C16/303 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079 ,  H01S2304/12

Abstract: A nitride semiconductor substrate includes an epitaxy substrate, a patterned nitride semiconductor pillar layer, a nitride semiconductor layer, and a mask layer is provided. The nitride semiconductor pillar layer includes a plurality of first patterned arranged hollow structures and a plurality of second patterned arranged hollow structures formed among the first patterned arranged hollow structures. The second patterned arranged hollow structures have nano dimensions. The nitride semiconductor pillar layer is formed on the epitaxy substrate, and the nitride semiconductor layer is formed on the nitride semiconductor pillar layer. The mask layer covers surfaces of the nitride semiconductor pillar layer and the epitaxy substrate.

Abstract translation: 氮化物半导体衬底包括外延衬底，图案化氮化物半导体柱层，氮化物半导体层和掩模层。 氮化物半导体柱层包括多个第一图案化布置的中空结构和在第一图案化排列的中空结构之间形成的多个第二图案化布置的中空结构。 第二图案化排列的中空结构具有纳米尺寸。 在外延基板上形成氮化物半导体柱层，在氮化物半导体柱层上形成氮化物半导体层。 掩模层覆盖氮化物半导体柱层和外延基板的表面。

公开(公告)号：US20090274883A1

公开(公告)日：2009-11-05

申请号：US12177167

申请日：2008-07-22

Applicant: Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

Inventor： Po-Chun Liu ,  Yih-Der Guo ,  Tung-Wei Chi ,  Chu-Li Chao

IPC: B32B3/10 ,  C30B25/04

CPC classification number: C30B25/18 ,  C30B29/403 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: An initial substrate structure for forming a nitride semiconductor substrate is provided. The initial substrate structure includes a substrate, a patterned epitaxial layer, and a mask layer. The patterned epitaxial layer is located on the substrate and is formed by a plurality of pillars. The mask layer is located over the substrate and covers a part of the patterned epitaxial layer. The mask layer includes a plurality of sticks and there is a space between the sticks. The space exposes a portion of an upper surface of the patterned epitaxial layer.

Abstract translation: 提供了用于形成氮化物半导体衬底的初始衬底结构。 初始衬底结构包括衬底，图案化外延层和掩模层。 图案化的外延层位于基板上并且由多个柱形成。 掩模层位于衬底上并覆盖图案化外延层的一部分。 掩模层包括多个棒，并且在棒之间存在空间。 空间暴露图案化外延层的上表面的一部分。

公开(公告)号：US20100090312A1

公开(公告)日：2010-04-15

申请号：US12584942

申请日：2009-09-14

Applicant: Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

Inventor： Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

IPC: H01L29/20 ,  H01L21/20 ,  H01L21/04

CPC classification number: C30B25/02 ,  C23C14/0005 ,  C23C14/021 ,  C23C14/0617 ,  C23C16/01 ,  C23C16/0227 ,  C23C16/303 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079 ,  H01S2304/12

Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer.

Abstract translation: 提供一种氮化物半导体衬底及其制造方法。 氮化物半导体衬底包括外延衬底，氮化物衬底层，氮化物半导体层和掩模层。 氮化物柱层包括多个第一图案化排列的柱和多个第二图案化排列的柱。 在外延基板上形成氮化物柱层。 每个第二图案化排列的柱的横截面的宽度小于每个第一图案化排列的柱的横截面的宽度，并且每个第二图案化排列的柱之间的距离长于距离 在每个第一图案化排列的柱子中。 外延衬底的表面，第一图案化排列的柱和第二图案化排列的柱被掩模层覆盖。 氮化物半导体层形成在氮化物柱层上。