公开(公告)号：US10096544B2

公开(公告)日：2018-10-09

申请号：US13464055

申请日：2012-05-04

Applicant: Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

Inventor： Chih-Ming Lai ,  Wen-Chun Huang ,  Ru-Gun Liu ,  Pi-Tsung Chen

IPC: H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: The present disclosure provides an interconnect structure for a semiconductor device. The interconnect structure includes a first metal layer that contains a first metal line. The interconnect structure includes a dielectric layer located over the first metal layer. The dielectric layer contains a first sub-via electrically coupled to the first metal line and a second sub-via electrically coupled to the first sub-via. The second sub-via is different from the first sub-via. The interconnect structure includes a second metal layer located over the dielectric layer. The second metal layer contains a second metal line electrically coupled to the second sub-via. No other metal layer is located between the first metal layer and the second metal layer.

公开(公告)号：US08759186B2

公开(公告)日：2014-06-24

申请号：US13354334

申请日：2012-01-20

Applicant: Yung-Hui Yeh ,  Chih-Ming Lai

Inventor： Yung-Hui Yeh ,  Chih-Ming Lai

IPC: H01L33/08

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US08587862B2

公开(公告)日：2013-11-19

申请号：US13218462

申请日：2011-08-26

Applicant: Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

Inventor： Jiun-Wei Liou ,  Jun-Ying Li ,  Chih-Ming Lai ,  Chern-Lin Chen ,  Way-Seen Wang ,  Lung-Han Peng

IPC: G02F1/37 ,  G02F1/35

CPC classification number: G02F1/37 ,  G02F1/3558 ,  G02F1/3775

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract translation: 二次谐波发生非线性频率转换器包括非线性光学晶体。 非线性光学晶体包括多个部分。 这些部分依次相互连接，每个部分的阶段与其他部分不同。 每个相包括正域和负域。 每个部分包括多个准相位匹配结构。 准相位匹配结构依次相互连接，在一个部分中具有相同的相位。

公开(公告)号：US20130126859A1

公开(公告)日：2013-05-23

申请号：US13354334

申请日：2012-01-20

Applicant: Yung-Hui Yeh ,  Chih-Ming Lai

Inventor： Yung-Hui Yeh ,  Chih-Ming Lai

IPC: H01L33/08 ,  H01L33/44

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

Abstract: A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer.

Abstract translation: 一种制造半导体器件的方法包括在衬底上形成金属氧化物半导体层和第一绝缘层。 在第一绝缘层上形成栅极。 通过使用栅极作为蚀刻掩模来对第一绝缘层进行构图，以使金属氧化物半导体层暴露于源极区和漏极区。 在基板上形成介电层以覆盖栅极和氧化物半导体层，其中电介质层具有氢基和羟基中的至少一个。 进行加热处理，使得氢基和羟基中的至少一个与源极区和漏极区反应。 在电介质层上分别形成与源极区域和漏极区域电连接的源极电极和漏极电极。

公开(公告)号：US08350450B2

公开(公告)日：2013-01-08

申请号：US12749472

申请日：2010-03-29

Applicant: Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

Inventor： Chih-Chung Tsao ,  Chih-Ming Lai ,  Yu-Pin Liu

IPC: H01J61/42

CPC classification number: F21V29/004 ,  F21K9/232 ,  F21V29/78 ,  F21Y2107/20 ,  F21Y2115/10

Abstract: An LED lamp includes a heat sink including a base having a heat-dissipating face, an LED module including a printed circuit board mounted on the base and a plurality of LEDs disposed on the printed circuit board, and a connecter electrically connecting the LED module to a power supply. The heat sink further includes a plurality of spiral fins protruding outwardly from the heat-dissipating face of the base.

Abstract translation: LED灯包括散热器，该散热器包括具有散热面的基座，包括安装在基座上的印刷电路板的LED模块和布置在印刷电路板上的多个LED，以及将LED模块电连接到 电源。 散热器还包括从基座的散热面向外突出的多个螺旋形翅片。

公开(公告)号：US08337053B2

公开(公告)日：2012-12-25

申请号：US12795821

申请日：2010-06-08

Applicant: Tien-Pao Chen ,  Chih-Ming Lai

Inventor： Tien-Pao Chen ,  Chih-Ming Lai

IPC: F21V3/00

CPC classification number: F21V5/04 ,  F21V5/08 ,  F21W2131/103 ,  F21Y2115/10 ,  G02B19/0014 ,  G02B19/0061

Abstract: A lens applied to a light emitting element includes a first surface profile and a second surface profile opposite to the first surface profile. The first surface profile defines a first trench facing the light emitting element, and the first trench includes a bottom curved surface serving as a light incident surface. The second surface profile includes a top curved surface, and serves as a light emitting surface. Both the bottom and the top curved surfaces are mirror symmetric to the first suppositional plane P1 (X=0), and mirror asymmetric to the second suppositional plane P2 (Y=0) to cooperatively adjust light from the light emitting element to obtain an asymmetric light field. An illumination device having the lens is further provided.

Abstract translation: 应用于发光元件的透镜包括第一表面轮廓和与第一表面轮廓相对的第二表面轮廓。 第一表面轮廓限定面向发光元件的第一沟槽，并且第一沟槽包括用作光入射表面的底部弯曲表面。 第二表面轮廓包括顶部曲面，并且用作发光表面。 底部和顶部曲面都与第一假想平面P1（X = 0）镜面对称，并且镜子不对称于第二假想平面P2（Y = 0），以协调地调节来自发光元件的光以获得不对称 光场。 还提供了具有透镜的照明装置。

公开(公告)号：US08246205B2

公开(公告)日：2012-08-21

申请号：US12889433

申请日：2010-09-24

Applicant: Chih-Ming Lai

Inventor： Chih-Ming Lai

IPC: F21S4/00 ,  F21V21/00

CPC classification number: F21V23/0457 ,  F21K9/23 ,  F21Y2115/10 ,  H05B33/0854 ,  H05B37/0227

Abstract: An LED light emitting device includes an LED light emitting component comprising a visible LED die emitting visible light and an infrared LED die emitting infrared light, a power source driver for providing electric energy for the LED light emitting component, and a temperature sensor for sensing a surface temperature of an outer surface of the LED light emitting component. When a value of the surface temperature is smaller than zero degree Celsius, the temperature sensor outputs a control signal to the power source driver to control the power source driver to supply an electric current to the infrared LED die, whereby the infrared LED die radiates infrared light to melt ice on the outer surface of the LED light emitting component.

Abstract translation: 一种LED发光装置，其特征在于，包括：LED发光部件，其包含发出可见光的可见LED芯片和发射红外光的红外LED芯片;用于为所述LED发光部件提供电能的电源驱动器;以及感测 LED发光部件的外表面的表面温度。 当表面温度的值小于零摄氏度时，温度传感器向电源驱动器输出控制信号，以控制电源驱动器向红外LED管芯提供电流，由此红外LED管芯辐射红外线 光在LED发光部件的外表面上融化冰。

公开(公告)号：US08215783B2

公开(公告)日：2012-07-10

申请号：US12768742

申请日：2010-04-28

Applicant: Chih-Ming Lai

Inventor： Chih-Ming Lai

IPC: F21V33/00

CPC classification number: F21V29/60 ,  F21S8/083 ,  F21V29/2212 ,  F21V29/76 ,  F21W2111/00 ,  F21W2131/10 ,  F21Y2115/10 ,  Y10S362/80

Abstract: An LED lamp includes a lamp support and a light-source module mounted on the lamp support. The lamp support includes a main post and a branch post extending from the main post. The main post is tubular and defines a first airflow tunnel inside the main post. The branch post is tubular and defines a second airflow tunnel inside the branch post, and the second airflow tunnel is directly communicated with the outer environment. The first and second airflow tunnels are communicated with each other. The light-source module is located at a position through which an airflow from the first and second airflow tunnels of the main post and the branch post flows.

Abstract translation: LED灯包括灯支架和安装在灯支架上的光源模块。 灯支架包括主柱和从主柱延伸的分支柱。 主柱是管状的，并且在主柱内限定了第一气流通道。 分支柱是管状的并且在分支柱内部限定第二气流通道，并且第二气流通道与外部环境直接连通。 第一和第二气流通道彼此连通。 光源模块位于通过主柱和分支柱的第一和第二气流通道的气流流过的位置。

公开(公告)号：US20120171792A1

公开(公告)日：2012-07-05

申请号：US13050956

申请日：2011-03-18

Applicant: Yung-Hui Yeh ,  Chih-Ming Lai ,  Chun-Cheng Cheng

Inventor： Yung-Hui Yeh ,  Chih-Ming Lai ,  Chun-Cheng Cheng

IPC: H01L33/02

CPC classification number: H01L27/1225 ,  H01L27/3262 ,  H01L2251/5338

Abstract: A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern.

Abstract translation: 提供了一种制造像素阵列的方法。 第一金属层形成在衬底上。 图案化金属层以形成与每条数据线相邻的多条数据线和多条漏极图案。 数据线和漏极图案彼此分离。 在基板上形成氧化物半导体层和覆盖氧化物半导体层的第一绝缘层。 第二金属层形成在第一绝缘层上并被图案化以形成与数据线和漏极图案相交的多条扫描线。 通过使用扫描线作为掩模，对氧化物半导体层和第一绝缘层进行图案化以形成位于每条扫描线下方的多个氧化物半导体通道。 每个氧化物半导体沟道位于一个数据线和一个漏极图案之间。

公开(公告)号：USD662956S1

公开(公告)日：2012-07-03

申请号：US29363307

申请日：2010-06-08

Applicant: Chih-Ming Lai ,  Hong-Bin Yang

Designer： Chih-Ming Lai ,  Hong-Bin Yang