公开(公告)号：US08502259B2

公开(公告)日：2013-08-06

申请号：US12815432

申请日：2010-06-15

Applicant: Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

Inventor： Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A light emitting device including a light emitting chip and a magnetic material is provided. The light emitting chip includes a first doped semiconductor layer, a second doped semiconductor layer, and a light emitting semiconductor layer disposed between the first doped semiconductor layer and the second doped semiconductor layer. The magnetic material is disposed beside the light emitting chip, wherein the magnetic material is not disposed on a conducting path of a current causing the light emitting chip to emit light.

Abstract translation: 提供了包括发光芯片和磁性材料的发光器件。 发光芯片包括第一掺杂半导体层，第二掺杂半导体层和设置在第一掺杂半导体层和第二掺杂半导体层之间的发光半导体层。 磁性材料设置在发光芯片旁边，其中磁性材料不设置在导致发光芯片发光的电流的导电路径上。

公开(公告)号：US08482103B2

公开(公告)日：2013-07-09

申请号：US12963650

申请日：2010-12-09

Applicant: Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

Inventor： Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

IPC: H01L29/20

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L29/045 ,  H01L29/2003

Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.

Abstract translation: 提供了包括基板，掩模层，第一氮化物半导体层和第二氮化物半导体的氮化物半导体模板。 衬底具有多个沟槽，每个沟槽具有底表面，第一倾斜侧壁和第二倾斜侧壁。 掩模层覆盖第二倾斜侧壁并暴露第一倾斜侧壁。 第一氮化物半导体层设置在衬底和掩模层之上。 第一氮化物半导体层填充沟槽并与第一倾斜侧壁接触。 第一氮化物半导体层具有位于沟槽外部的空隙，并且掩模层的部分被空隙暴露。 第一氮化物半导体层具有多个纳米棒。 第二氮化物半导体层覆盖纳米棒。 纳米棒之间的空间并不完全由第二氮化物半导体层填充。

公开(公告)号：US20120168801A1

公开(公告)日：2012-07-05

申请号：US13383211

申请日：2009-07-10

Applicant: Rong Xuan ,  Chao-Wei Li ,  Hung-Lieh Hu ,  Mu-Tao Chu ,  Chih-Hao Hsu ,  Jenq-Dar Tsay

Inventor： Rong Xuan ,  Chao-Wei Li ,  Hung-Lieh Hu ,  Mu-Tao Chu ,  Chih-Hao Hsu ,  Jenq-Dar Tsay

IPC: H01L33/58 ,  H01L29/20 ,  H01L33/42

CPC classification number: H01L33/02 ,  H01L33/38 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device package structure includes a carrier, at least one light-emitting device and a magnetic element. The magnetic element aids in enhancing overall luminous output efficiency.

Abstract translation: 发光器件封装结构包括载体，至少一个发光器件和磁性元件。 磁性元件有助于提高整体的发光效率。

公开(公告)号：US07663153B2

公开(公告)日：2010-02-16

申请号：US12011304

申请日：2008-01-25

Applicant: Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

Inventor： Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

IPC: H01L31/00

CPC classification number: H01L33/12 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0083

Abstract: A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Abstract translation: 提供了一种发光二极管（LED）。 LED至少包括基板，锯齿多层，第一类型半导体层，有源发射层和第二类型半导体层。 在LED中，通过自动克隆光子晶体工艺，在第一类半导体层下面的有源发射层的相对侧形成锯齿多层。 由于在LED的基板上存在锯齿多层，可以通过锯齿多层的反射和再循环来再次形成有源发射层的背面的散射光。 因此，所有的光被聚焦以向前辐射，以便提高LED的光提取效率。 此外，由于锯齿多层具有释放热应力并且减小其与基板之间的弹性变形的性能，所以锯齿多层不会在任何高温处理之后剥离或破裂。

公开(公告)号：US07602831B2

公开(公告)日：2009-10-13

申请号：US11453100

申请日：2006-06-15

Applicant: Rong Xuan ,  Yao-Lin Huang ,  Yu-Chen Yu ,  Yen Chu

Inventor： Rong Xuan ,  Yao-Lin Huang ,  Yu-Chen Yu ,  Yen Chu

IPC: H01S3/098 ,  H01S5/00 ,  H01S3/14

CPC classification number: H01S5/1021 ,  H01S5/0654 ,  H01S5/1017 ,  H01S5/1039

Abstract: A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

Abstract translation: 一种半导体激光器件，包括具有第一表面和与第一表面相对的第二表面的基板，形成在基板的第二表面上的有源区，形成在有源区上的包覆层，以及形成在该包层中的绝缘区 以在基板的第二表面上形成具有第一尺寸的第一激光区域和具有不同于第一尺寸的第二尺寸的第二激光区域。 第一激光区域用于产生具有第一激光模式通道空间的第一光谱。 第二激光区域用于产生具有第二激光模式通道空间的第二光谱。 第一光谱和第二光谱的组合形成单模激光。 没有任何光栅，半导体激光器件易于制造并且制造成本低。

公开(公告)号：US20090250712A1

公开(公告)日：2009-10-08

申请号：US12436798

申请日：2009-05-07

Applicant: Rong Xuan

Inventor： Rong Xuan

IPC: H01L33/00

CPC classification number: H01L33/0004 ,  H01L33/48 ,  H01L51/52 ,  H01L51/5237

Abstract: A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature.

Abstract translation: 提供了一种发光器件，其包括发光结构和磁性材料。 发光结构具有带隙的令人兴奋的结合能。 磁性材料与发光结构耦合以在发光结构中产生磁场。 在室温下，令人兴奋的结合能可能高于约25.8meV。

公开(公告)号：US20090179209A1

公开(公告)日：2009-07-16

申请号：US12117747

申请日：2008-05-09

Applicant: Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

Inventor： Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device is provided. In the present invention, a magnetic material is added to the light emitting device to change the current path and the distribution of the current density. As the main distribution of the current density is moved from the area between the electrodes to the area under light-out plane, the emitted light is no longer blocked by the electrodes, such that the light emitting efficiency can be enhanced and the distribution of the current density remains homogeneous.

Abstract translation: 提供了一种发光器件。 在本发明中，将磁性材料添加到发光器件中以改变电流路径和电流密度的分布。 由于电流密度的主要分布从电极之间的区域移动到发光面以下，所以发射的光不再被电极阻挡，从而能够提高发光效率， 电流密度保持均匀。

公开(公告)号：US20120098024A1

公开(公告)日：2012-04-26

申请号：US13339388

申请日：2011-12-29

Applicant: Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

Inventor： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

IPC: H01L33/62

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40

Abstract: A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

Abstract translation: 提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。 发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。 第一金属焊盘电连接到n型氮化物半导体层。 第二金属焊盘电连接到p型氮化物半导体层。 第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。 与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。

公开(公告)号：US20120085987A1

公开(公告)日：2012-04-12

申请号：US12902162

申请日：2010-10-12

Applicant: Rong Xuan ,  Po-Chun Liu ,  Ren-Hao Jiang

Inventor： Rong Xuan ,  Po-Chun Liu ,  Ren-Hao Jiang

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm at room temperature. The magnetic material is coupled with the light-emitting structure to produce a magnetic field perpendicular to a surface of the active layer in the light-emitting structure.

Abstract translation: 提供一种发光器件，其包括具有有源层和磁性材料的发光结构。 有源层包括至少一个量子阱结构，并且在室温下至少一个量子阱结构的厚度大于或基本上等于1.2nm。 磁性材料与发光结构耦合以产生垂直于发光结构中有源层表面的磁场。

公开(公告)号：US20120012868A1

公开(公告)日：2012-01-19

申请号：US12837513

申请日：2010-07-16

Applicant: Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

Inventor： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

IPC: H01L33/52 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/48 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

Abstract translation: 发光芯片封装模块包括衬底，发光芯片封装结构和磁性器件。 基板具有表面。 发光芯片封装结构设置在基板的表面上。 发光芯片封装结构包括载体，发光芯片和密封剂。 发光芯片设置在载体上并与其电连接。 密封剂设置在载体上并覆盖发光芯片。 磁性装置设置在发光芯片封装结构的旁边，以向发光芯片施加磁场。