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    Nitride semiconductor substrate and method for manufacturing the same
    1.
    发明授权
    Nitride semiconductor substrate and method for manufacturing the same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US08604487B2

    公开(公告)日：2013-12-10

    申请号：US13329336

    申请日：2011-12-19

    Applicant: Yen-Hsiang Fang ,  Chu-Li Chao ,  Chih-Wei Hu ,  Yih-Der Guo

    Inventor： Yen-Hsiang Fang ,  Chu-Li Chao ,  Chih-Wei Hu ,  Yih-Der Guo

    IPC: H01L29/15

    CPC classification number: H01L33/0075 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/12

    Abstract: A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer.

    Abstract translation: 提供一种氮化物半导体衬底及其制造方法。 氮化物半导体衬底包括基底材料，图案化氮化物半导体，保护层和氮化物半导体层。 图案化氮化物半导体层位于基材上并且包括多个纳米棒结构和多个块图案，并且纳米棒结构的上表面与块图案的上表面基本共面。 保护层覆盖纳米棒结构的侧壁，以阻挡块图案的侧壁。 氮化物半导体层位于图案化的氮化物半导体层上，并且多个纳米孔位于氮化物半导体层和图案化氮化物半导体层之间。

    SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME
    2.
    发明申请
    SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME 有权
    基板结构和制造方法以及从其制造的发光二极管器件

    公开(公告)号：US20120153338A1

    公开(公告)日：2012-06-21

    申请号：US12975271

    申请日：2010-12-21

    Applicant: Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

    Inventor： Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

    IPC: H01L33/62 ,  H01L29/20 ,  H01L21/20

    CPC classification number: H01L33/007 ,  C30B25/183 ,  C30B29/403 ,  H01L33/12

    Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.

    Abstract translation: 描述了一种衬底结构，包括起始衬底，起始衬底上的晶体墩和掩模层。 掩模层覆盖每个晶墩的侧壁的上部，连接在其底部的晶体墩之间，并且通过晶体墩之间的空白空间与起始衬底分离。 还描述了外延衬底结构，其可以通过在上述衬底结构上生长外延层形成晶体墩而形成。 在外延层生长之后，晶体墩可能被破坏。

    NITRIDE SEMICONDUCTOR TEMPLATE AND FABRICATING METHOD THEREOF
    3.
    发明申请
    NITRIDE SEMICONDUCTOR TEMPLATE AND FABRICATING METHOD THEREOF 有权
    氮化物半导体模板及其制造方法

    公开(公告)号：US20120146190A1

    公开(公告)日：2012-06-14

    申请号：US12963650

    申请日：2010-12-09

    Applicant: Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

    Inventor： Hsun-Chih Liu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan ,  Chu-Li Chao

    IPC: H01L29/20 ,  H01L21/20

    CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/3081 ,  H01L29/045 ,  H01L29/2003

    Abstract: A nitride semiconductor template including a substrate, a mask layer, a first nitride semiconductor layer and a second nitride semiconductor is provided. The substrate has a plurality of trenches, each of the trenches has a bottom surface, a first inclined sidewall and a second inclined sidewall. The mask layer covers the second inclined sidewall and exposes the first inclined sidewall. The first nitride semiconductor layer is disposed over the substrate and the mask layer. The first nitride semiconductor layer fills the trenches and in contact with the first inclined sidewall. The first nitride semiconductor layer has voids located outside the trenches and parts of the mask layer are exposed by the voids. The first nitride semiconductor layer has a plurality of nano-rods. The second nitride semiconductor layer covers the nano-rods. The spaces between the nano-rods are not entirely filled by the second nitride semiconductor layer.

    Abstract translation: 提供了包括基板，掩模层，第一氮化物半导体层和第二氮化物半导体的氮化物半导体模板。 衬底具有多个沟槽，每个沟槽具有底表面，第一倾斜侧壁和第二倾斜侧壁。 掩模层覆盖第二倾斜侧壁并暴露第一倾斜侧壁。 第一氮化物半导体层设置在衬底和掩模层之上。 第一氮化物半导体层填充沟槽并与第一倾斜侧壁接触。 第一氮化物半导体层具有位于沟槽外部的空隙，并且掩模层的部分被空隙暴露。 第一氮化物半导体层具有多个纳米棒。 第二氮化物半导体层覆盖纳米棒。 纳米棒之间的空间并不完全由第二氮化物半导体层填充。

    LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF
    7.
    发明申请
    LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
    发光二极管及其制造方法

    公开(公告)号：US20130112987A1

    公开(公告)日：2013-05-09

    申请号：US13365217

    申请日：2012-02-02

    Applicant: Yi-Keng Fu ,  Ren-Hao Jiang ,  Yen-Hsiang Fang ,  Bo-Chun Chen ,  Chia-Feng Lin

    Inventor： Yi-Keng Fu ,  Ren-Hao Jiang ,  Yen-Hsiang Fang ,  Bo-Chun Chen ,  Chia-Feng Lin

    IPC: H01L33/32

    CPC classification number: H01L33/22 ,  H01L33/0075 ,  H01L33/0079

    Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm−2, wherein 9.87×107≦h2d, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

    Abstract translation: 提供了包括GaN衬底，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极的发光二极管。 GaN衬底具有与其相对的第一表面和第二表面，并且第二表面具有多个突起，突起的高度为hmum，并且第二表面上的突起的分布密度为dcm-2，其中 9.87×107@h2d和h@1.8。 第一类型半导体被布置在GaN衬底的第一表面上。 发光层设置在第一半导体层的部分区域上，由发光层发射的光的波长为375nm〜415nm。 第二半导体层设置在发光层上。

    Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same
    9.
    发明授权
    Substrate structure and fabrication thereof, and light emitting diode devices fabricated from the same 有权
    基板结构及其制造以及由其制造的发光二极管器件

    公开(公告)号：US08674393B2

    公开(公告)日：2014-03-18

    申请号：US12975271

    申请日：2010-12-21

    Applicant: Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

    Inventor： Yih-Der Guo ,  Chu-Li Chao ,  Yen-Hsiang Fang ,  Ruey-Chyn Yeh ,  Kun-Fong Lin

    IPC: H01L33/00

    CPC classification number: H01L33/007 ,  C30B25/183 ,  C30B29/403 ,  H01L33/12

    Abstract: A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown.

    Abstract translation: 描述了一种衬底结构，包括起始衬底，起始衬底上的晶体墩和掩模层。 掩模层覆盖每个晶墩的侧壁的上部，连接在其底部的晶体墩之间，并且通过晶体墩之间的空白空间与起始衬底分离。 还描述了外延衬底结构，其可以通过在上述衬底结构上生长外延层形成晶体墩而形成。 在外延层生长之后，晶体墩可能被破坏。

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