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    MAGNETIC FIELD SENSING DEVICE AND METHOD
    1.
    发明申请
    MAGNETIC FIELD SENSING DEVICE AND METHOD 审中-公开
    磁场感测装置及方法

    公开(公告)号：US20150153426A1

    公开(公告)日：2015-06-04

    申请号：US14556101

    申请日：2014-11-29

    Applicant: Jui-Hang Chang ,  Ching-Ray Chang

    Inventor： Jui-Hang Chang ,  Ching-Ray Chang

    IPC: G01R33/09

    CPC classification number: G01R33/098

    Abstract: The present invention discloses a magnetic field sensing device and method. The magnetic field sensing device includes a pinned layer with a first magnetization direction, an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and a sensing layer of magnetic material, located between the analyzer and the pinned layer. The magnetic field sensing method includes: providing a pinned layer with a first magnetization direction, providing an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and providing a sensing layer of magnetic material, located between the analyzer and the pinned layer.

    Abstract translation: 本发明公开了一种磁场感测装置及方法。 磁场感测装置包括具有第一磁化方向的钉扎层，具有第二磁化方向的分析器，其中第一和第二磁化方向形成一个角度，以及磁性材料的感测层，位于分析器和固定 层。 磁场感测方法包括：提供具有第一磁化方向的钉扎层，为分析器提供第二磁化方向，其中第一和第二磁化方向形成一个角度，并且提供磁性材料的感测层，位于 分析仪和固定层。

    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY
    2.
    发明申请
    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY 审中-公开
    不连续的非均匀磁共振记录膜

    公开(公告)号：US20110171494A1

    公开(公告)日：2011-07-14

    申请号：US12753904

    申请日：2010-04-05

    Applicant: GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    Inventor： GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    IPC: G11B5/70 ,  G11B5/855 ,  G11B5/66 ,  G11B5/714 ,  G11B5/706

    CPC classification number: G11B5/64 ,  G11B5/653 ,  G11B5/84 ,  G11B5/851

    Abstract: The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy.

    Abstract translation: 本发明公开了具有垂直磁各向异性的不连续岛状铁磁记录膜。 不连续的岛状铁磁记录膜包括基板和铁磁层。 铁基层形成在基板上，并通过高温真空退火工艺退火。 在退火之后，铁磁层之间存在表面能量差，并且基板将铁磁层转变为分离好的和不连续的岛状铁磁性颗粒。 每个岛状铁磁颗粒被认为是单个磁畴，这有利于实现具有垂直磁各向异性的不连续岛状铁磁记录膜。

    METHOD FOR FORMING AN ORDERED ALLOY
    3.
    发明申请
    METHOD FOR FORMING AN ORDERED ALLOY 审中-公开
    形成订购合金的方法

    公开(公告)号：US20110070373A1

    公开(公告)日：2011-03-24

    申请号：US12700953

    申请日：2010-02-05

    Applicant: Shien-Wen Wang ,  An-Cheng Sun ,  Jen-Hwa Hsu ,  Po-Cheng Kuo ,  Ching-Ray Chang

    Inventor： Shien-Wen Wang ,  An-Cheng Sun ,  Jen-Hwa Hsu ,  Po-Cheng Kuo ,  Ching-Ray Chang

    IPC: B05D3/02 ,  C23C14/34

    CPC classification number: C23C14/185 ,  C03C17/40 ,  C22C5/04 ,  C23C14/025 ,  C23C14/352

    Abstract: A method for forming an ordered alloy includes: (a) forming a layer of a first metal with a layer thickness of less than 0.3 nm over a substrate; (b) forming a layer of a second metal with a layer thickness of less than 0.3 nm on the layer of the first metal under an elevated temperature sufficient to cause interdiffusion of atoms of the first and second metals between the layer of the first metal and the layer of the second metal so as to form the ordered alloy; and (c) repeating steps (a) and (b) until a predetermined layer thickness of the ordered alloy is achieved.

    Abstract translation: 形成有序合金的方法包括：（a）在衬底上形成层厚度小于0.3nm的第一金属层; （b）在高温下在第一金属层上形成厚度小于0.3nm的第二金属层，足以使第一和第二金属的原子在第一金属和第 第二金属层以形成有序合金; 和（c）重复步骤（a）和（b），直到实现有序合金的预定层厚。

    Data storing device and storing method for the same
    5.
    发明申请
    Data storing device and storing method for the same 审中-公开
    数据存储装置及其存储方法

    公开(公告)号：US20090284669A1

    公开(公告)日：2009-11-19

    申请号：US12229778

    申请日：2008-08-26

    Applicant: An-Cheng Sun ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    Inventor： An-Cheng Sun ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    IPC: G11C11/00 ,  G11C11/02

    CPC classification number: G11C11/02 ,  G11C13/02

    Abstract: A memory cell is provided in the present invention. The memory cell includes a first electrode receiving a first voltage to form an electric field therearound; and a combination arranged on the first electrode, comprising a liquid crystal molecule coupled with a magnetic substance for forming a magnetic field therearound, wherein the magnetic field changing with the first electric field.

    Abstract translation: 在本发明中提供了一种存储单元。 存储单元包括接收第一电压以在其周围形成电场的第一电极; 以及布置在第一电极上的组合，包括与用于在其周围形成磁场的磁性物质耦合的液晶分子，其中所述磁场随着第一电场而变化。

    THREE-DIMENSIONAL IN-PLANE MAGNETIC SENSOR
    6.
    发明申请
    THREE-DIMENSIONAL IN-PLANE MAGNETIC SENSOR 审中-公开
    三维平面内磁传感器

    公开(公告)号：US20140062470A1

    公开(公告)日：2014-03-06

    申请号：US13597505

    申请日：2012-08-29

    Applicant: Meng-Huang Lai ,  Fu-Te Yuan ,  Hai-Tao Pan ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    Inventor： Meng-Huang Lai ,  Fu-Te Yuan ,  Hai-Tao Pan ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    IPC: G01R33/02

    CPC classification number: G01R33/0206 ,  G01R33/0005 ,  G01R33/098

    Abstract: A three-dimensional (3D) in-plane magnetic sensor includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit. The first magnetic sensor, second magnetic sensor and third magnetic sensor are installed on a same plane to measure the magnetic field component of first direction, second direction and third direction, where the third direction is perpendicular to the first and second direction. The third magnetic sensor includes a third fixed layer, a third magnetic insulating layer and a third free layer. The magnetoresistance of the third free layer is an intermediate value in the spontaneous magnetization direction, and is varied when interfered by an external magnetic field. In short, the 3D in-plane magnetic sensor is manufactured with semiconductor processing which does not require vertical adhesion, and also bring the benefits of improved production capacity, prolonged product life, reduced manufacturing cost and time.

    Abstract translation: 三维（3D）面内磁传感器包括第一磁传感器，第二磁传感器，第三磁传感器和电路。 第一磁传感器，第二磁传感器和第三磁传感器安装在同一平面上，以测量第一方向，第二方向和第三方向的磁场分量，其中第三方向垂直于第一和第二方向。 第三磁传感器包括第三固定层，第三磁绝缘层和第三自由层。 第三自由层的磁阻是自发磁化方向的中间值，并且在被外部磁场干扰时变化。 简而言之，3D平面磁传感器采用不需要垂直粘合的半导体加工制造，并且还具有提高生产能力，延长产品寿命，降低制造成本和时间的优点。

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