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1.发明申请HIGH DENSITY MAGNETIC RECORDING FILM AND METHOD FOR MANUFACTURING THE SAME BY USING RAPID THERMAL ANNEALING TREATMENT 审中-公开高密度磁记录膜及其制造方法，采用快速热退火处理公开(公告)号：US20100124673A1
公开(公告)日：2010-05-20
申请号：US12408070
申请日：2009-03-20
申请人： Sheng-Chi Chen , Po-Cheng Kuo , Chi-Long Shen , Sung-po Chen , Ching-Ray Chang
发明人： Sheng-Chi Chen , Po-Cheng Kuo , Chi-Long Shen , Sung-po Chen , Ching-Ray Chang
CPC分类号： G11B5/84 , C23C14/165 , C23C14/185 , C23C14/5806 , G11B5/64 , G11B5/653 , G11B5/851 , H01F10/123 , H01F10/14 , H01F41/22
摘要： A high density magnetic recording film by using a rapid thermal annealing process is provided. The high density magnetic recording film includes a substrate; and a ferromagnetic layer formed on the substrate; wherein the rapid thermal annealing process is performed for the ferromagnetic layer at a temperature range of 600 to 800° C. for 5 to 180 seconds with a heating ramp rate of 60 to 100° C./sec so as to obtain the high density magnetic recording film.
摘要翻译： 提供了使用快速热退火工艺的高密度磁记录膜。 高密度磁记录膜包括基片; 以及形成在所述基板上的铁磁层; 其中在600〜800℃的温度范围内对铁磁层进行快速热退火处理5〜180秒，加热斜率为60〜100℃/秒，以获得高密度磁性 录影片
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2.发明申请公开(公告)号：US20090092858A1
公开(公告)日：2009-04-09
申请号：US12130087
申请日：2008-05-30
申请人： Sheng-Chi Chen , Po-Cheng Kuo , Chi-Long Shen , Shang-Lin Hsu , Ching-Ray Chang
发明人： Sheng-Chi Chen , Po-Cheng Kuo , Chi-Long Shen , Shang-Lin Hsu , Ching-Ray Chang
CPC分类号： G11B5/7325 , C23C14/352 , G11B5/65 , G11B5/656 , G11B5/8404 , G11B5/851
摘要： The perpendicular magnetic recording medium of the present invention includes a substrate, a non-magnetic layer, a ferromagnetic layer and an antiferromagnetic oxide. The non-magnetic layer is formed on the substrate and the ferromagnetic layer is formed on the non-magnetic layer. The antiferromagnetic oxide is formed in the ferromagnetic layer after the perpendicular magnetic recording medium is annealed by an annealing process. An exchange coupling interaction between the antiferromagnetic oxide and the ferromagnetic materials is introduced.
摘要翻译： 本发明的垂直磁记录介质包括基板，非磁性层，铁磁层和反铁磁性氧化物。 非磁性层形成在基板上，铁磁层形成在非磁性层上。 在垂直磁记录介质通过退火处理退火之后，在铁磁层中形成反铁磁性氧化物。 介绍了反铁磁氧化物和铁磁材料之间的交换耦合相互作用。
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公开(公告)号：US20060021871A1
公开(公告)日：2006-02-02
申请号：US10901789
申请日：2004-07-29
申请人： Po-Cheng Kuo , Huei-Li Huang , Jen-Hwa Hsu , Ching-Ray Chang , An-Cheng Sun , Sheng-Chi Chen , Chun-Yuan Chou , Chang-Tai Lee , Huang-Wei Chang
发明人： Po-Cheng Kuo , Huei-Li Huang , Jen-Hwa Hsu , Ching-Ray Chang , An-Cheng Sun , Sheng-Chi Chen , Chun-Yuan Chou , Chang-Tai Lee , Huang-Wei Chang
CPC分类号： C23C14/165 , C23C14/02 , C23C14/185 , C23C14/5806 , G11B5/84 , H01F10/123 , H01F41/18 , H01F41/22
摘要： A method for fabricating an L10 alloy film is provided. The method includes steps of (a) providing a substrate; (b) heating the substrate as a preheated substrate at a first temperature ranged from 100° C. to 600° C. for a time period ranged from 5 minutes to 120 minutes, and then cooling the substrate to room temperature in the sputtering chamber; (c) depositing an alloy film on the preheated substrate; and (d) annealing the alloy film at a second temperature ranged from 200° C. to 500° C. to form the alloy film.
摘要翻译： 提供了一种制造L1＆lt; 0＆gt;合金膜的方法。 该方法包括以下步骤：（a）提供衬底; （b）在100℃〜600℃的第一温度下将衬底加热为预热的衬底，时间为5分钟至120分钟，然后在溅射室中将衬底冷却至室温; （c）在预热的基底上沉积合金膜; 和（d）在200℃至500℃的第二温度下对合金膜退火以形成合金膜。
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公开(公告)号：US20140015727A1
公开(公告)日：2014-01-16
申请号：US13547121
申请日：2012-07-12
申请人： YAN-MING HONG , CHIH-WEI CHEN , CHIH-MING SU , SHENG-CHI CHEN
发明人： YAN-MING HONG , CHIH-WEI CHEN , CHIH-MING SU , SHENG-CHI CHEN
CPC分类号： H01Q1/2266 , H01Q9/42
摘要： An all-metal casing structure includes a casing unit, a first substrate unit, a second substrate unit, an antenna unit and a conductive unit. The casing unit includes at least one metal casing having at least one through opening. The first substrate unit includes at least one first substrate body disposed in the metal casing and neighboring to the through opening. The second substrate unit includes at least one second substrate body disposed in the metal casing and neighboring to the first substrate body. The antenna unit includes at least one antenna module disposed on the first substrate body and corresponding to the through opening, and the antenna module is electrically connected to the second substrate body. The conductive unit includes at least two conductive elements separated from each other by a predetermined distance and electrically connected between the metal casing and the first substrate body.
摘要翻译： 全金属外壳结构包括壳体单元，第一基板单元，第二基板单元，天线单元和导电单元。 壳体单元包括至少一个具有至少一个通孔的金属壳体。 第一基板单元包括设置在金属壳体中并与通孔相邻的至少一个第一基板主体。 第二基板单元包括设置在金属壳体中并与第一基板主体相邻的至少一个第二基板主体。 天线单元包括至少一个天线模块，该天线模块设置在第一基板主体上并对应于通孔，并且天线模块电连接到第二基板主体。 导电单元包括彼此分开预定距离的至少两个导电元件，并且电连接在金属外壳和第一基板主体之间。
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5.发明申请公开(公告)号：US20110171494A1
公开(公告)日：2011-07-14
申请号：US12753904
申请日：2010-04-05
申请人： GER-PIN LIN , Po-Cheng Kuo , Sheng-Chi Chen , Chih-Lung Shen , Kai-Tze Huang , Ching-Ray Chang
发明人： GER-PIN LIN , Po-Cheng Kuo , Sheng-Chi Chen , Chih-Lung Shen , Kai-Tze Huang , Ching-Ray Chang
摘要： The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy.
摘要翻译： 本发明公开了具有垂直磁各向异性的不连续岛状铁磁记录膜。 不连续的岛状铁磁记录膜包括基板和铁磁层。 铁基层形成在基板上，并通过高温真空退火工艺退火。 在退火之后，铁磁层之间存在表面能量差，并且基板将铁磁层转变为分离好的和不连续的岛状铁磁性颗粒。 每个岛状铁磁颗粒被认为是单个磁畴，这有利于实现具有垂直磁各向异性的不连续岛状铁磁记录膜。
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6.发明申请公开(公告)号：US20110104517A1
公开(公告)日：2011-05-05
申请号：US12730228
申请日：2010-03-23
申请人： SHENG-CHI CHEN , Chih-Lung Shen , Ger-Pin Lin , Ta-Huang Sun , Tsung-Yen Kuo , Po-Cheng Kuo , Ching-Ray Chang
发明人： SHENG-CHI CHEN , Chih-Lung Shen , Ger-Pin Lin , Ta-Huang Sun , Tsung-Yen Kuo , Po-Cheng Kuo , Ching-Ray Chang
摘要： The present invention discloses a single-layered recording film with perpendicular magnetic anisotropy. The single-layered recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a rapid thermal annealing process. After annealing, the average grain size of the single-layered recording film is close to the film thickness of ferromagnetic layer, which is beneficial to achieve a single-layered recording film with perpendicular magnetic anisotropy.
摘要翻译： 本发明公开了具有垂直磁各向异性的单层记录膜。 单层记录膜包括基板和铁磁层。 铁磁层形成在基板上，并通过快速热退火工艺退火。 退火后，单层记录膜的平均粒径接近铁磁层的膜厚，有利于实现具有垂直磁各向异性的单层记录膜。
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公开(公告)号：US08902110B2
公开(公告)日：2014-12-02
申请号：US13547121
申请日：2012-07-12
申请人： Yan-Ming Hong , Chih-Wei Chen , Chih-Ming Su , Sheng-Chi Chen
发明人： Yan-Ming Hong , Chih-Wei Chen , Chih-Ming Su , Sheng-Chi Chen
CPC分类号： H01Q1/2266 , H01Q9/42
摘要： An all-metal casing structure includes a casing unit, a first substrate unit, a second substrate unit, an antenna unit and a conductive unit. The casing unit includes at least one metal casing having at least one through opening. The first substrate unit includes at least one first substrate body disposed in the metal casing and neighboring to the through opening. The second substrate unit includes at least one second substrate body disposed in the metal casing and neighboring to the first substrate body. The antenna unit includes at least one antenna module disposed on the first substrate body and corresponding to the through opening, and the antenna module is electrically connected to the second substrate body. The conductive unit includes at least two conductive elements separated from each other by a predetermined distance and electrically connected between the metal casing and the first substrate body.
摘要翻译： 全金属外壳结构包括壳体单元，第一基板单元，第二基板单元，天线单元和导电单元。 壳体单元包括至少一个具有至少一个通孔的金属壳体。 第一基板单元包括设置在金属壳体中并与通孔相邻的至少一个第一基板主体。 第二基板单元包括设置在金属壳体中并与第一基板主体相邻的至少一个第二基板主体。 天线单元包括至少一个天线模块，该天线模块设置在第一基板主体上并对应于通孔，并且天线模块电连接到第二基板主体。 导电单元包括彼此分开预定距离的至少两个导电元件，并且电连接在金属外壳和第一基板主体之间。
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