公开(公告)号：US20100013054A1

公开(公告)日：2010-01-21

申请号：US12551534

申请日：2009-08-31

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L29/201

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract translation: 具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。 这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

公开(公告)号：US20080054294A1

公开(公告)日：2008-03-06

申请号：US11562422

申请日：2006-11-22

Applicant: Chih-Ming Lai ,  Jenq-Dar Tsay ,  Wen-Yueh Liu ,  Yih-Der Guo

Inventor： Chih-Ming Lai ,  Jenq-Dar Tsay ,  Wen-Yueh Liu ,  Yih-Der Guo

IPC: H01L33/00

CPC classification number: H01L21/02642 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.

Abstract translation: 本发明涉及形成氮化物半导体衬底的方法。 该方法包括提供衬底，然后在衬底上形成外延层的步骤。 在外延层上形成图案化掩模层，其中图案化掩模层暴露外延层的一部分。 接下来，进行氧化处理以氧化暴露的外延层，以形成多个位错阻挡结构。 然后去除图案化的掩模层。 此外，在具有位错阻挡结构的外延层上形成氮化物半导体层。

公开(公告)号：US08058705B2

公开(公告)日：2011-11-15

申请号：US12551534

申请日：2009-08-31

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract translation: 具有图案化结构的复合材料基板包括基板，第一介电层，第二介质层和氮化物半导体材料。 这里，第一电介质层层叠在基板上，第二介电层层叠在第一电介质层上，氮化物半导体材料层叠在第二电介质层上，其特征在于多个图案。

公开(公告)号：US07687378B2

公开(公告)日：2010-03-30

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L21/20

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US20080006849A1

公开(公告)日：2008-01-10

申请号：US11467167

申请日：2006-08-25

Applicant: Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

Inventor： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

IPC: H01L29/76 ,  H01L29/745

CPC classification number: H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract translation: 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

公开(公告)号：US07709823B2

公开(公告)日：2010-05-04

申请号：US11552527

申请日：2006-10-25

Applicant: Chih-Ming Lai ,  Wen-Yueh Liu ,  Jenq-Dar Tsay ,  Jung-Tsung Hsu ,  Shang-Jr Gwo ,  Chang-Hong Shen ,  Hon-Way Lin

Inventor： Chih-Ming Lai ,  Wen-Yueh Liu ,  Jenq-Dar Tsay ,  Jung-Tsung Hsu ,  Shang-Jr Gwo ,  Chang-Hong Shen ,  Hon-Way Lin

IPC: H01L29/12

CPC classification number: H01L29/0657 ,  B82Y10/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Abstract translation: 本发明涉及III族氮化物垂直杆衬底。 III族垂直杆基板包括基板，缓冲层和垂直杆层。 缓冲层位于衬底上。 垂直杆层位于缓冲层上，垂直杆层由站在缓冲层上的多个垂直杆组成。

公开(公告)号：US20100041216A1

公开(公告)日：2010-02-18

申请号：US12581891

申请日：2009-10-20

Applicant: Chih-Ming Lai ,  Jenq-Dar Tsay ,  Wen-Yueh Liu ,  Yih-Der Guo

Inventor： Chih-Ming Lai ,  Jenq-Dar Tsay ,  Wen-Yueh Liu ,  Yih-Der Guo

IPC: H01L21/20

CPC classification number: H01L21/02642 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.

Abstract translation: 本发明涉及形成氮化物半导体衬底的方法。 该方法包括提供衬底，然后在衬底上形成外延层的步骤。 在外延层上形成图案化掩模层，其中图案化掩模层暴露外延层的一部分。 接下来，进行氧化处理以氧化暴露的外延层，以形成多个位错阻挡结构。 然后去除图案化的掩模层。 此外，在具有位错阻挡结构的外延层上形成氮化物半导体层。

公开(公告)号：US20070272914A1

公开(公告)日：2007-11-29

申请号：US11552527

申请日：2006-10-25

Applicant: Chih-Ming Lai ,  Wen-Yueh Liu ,  Jenq-Dar Tsay ,  Jung-Tsung Hsu ,  Shang-Jr Gwo ,  Chang-Hong Shen ,  Hon-Way Lin

Inventor： Chih-Ming Lai ,  Wen-Yueh Liu ,  Jenq-Dar Tsay ,  Jung-Tsung Hsu ,  Shang-Jr Gwo ,  Chang-Hong Shen ,  Hon-Way Lin

IPC: H01L29/06

CPC classification number: H01L29/0657 ,  B82Y10/00 ,  C30B25/183 ,  C30B29/403 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/2003 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Abstract translation: 本发明涉及III族氮化物垂直杆衬底。 III族垂直杆基板包括基板，缓冲层和垂直杆层。 缓冲层位于衬底上。 垂直杆层位于缓冲层上，垂直杆层由站在缓冲层上的多个垂直杆组成。