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    Hybrid substrateless device with enhanced tuning efficiency
    1.
    发明授权
    Hybrid substrateless device with enhanced tuning efficiency 有权
    具有增强调谐效率的混合无基底器件

    公开(公告)号：US08796811B2

    公开(公告)日：2014-08-05

    申请号：US13205745

    申请日：2011-08-09

    申请人： Ivan Shubin ,  Ashok V. Krishnamoorthy ,  John E. Cunningham

    发明人： Ivan Shubin ,  Ashok V. Krishnamoorthy ,  John E. Cunningham

    IPC分类号： H01L27/12 ,  H01L21/50 ,  G02B6/10 ,  H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/1465 ,  H01L21/187 ,  H01L27/14661 ,  H01L27/1467 ,  H01L27/14881 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00

    摘要： In a hybrid integrated module, a semiconductor die is mechanically coupled face-to-face to an integrated device in which the substrate has been removed. For example, the integrated circuit may include an optical device fabricated on a silicon-on-insulator (SOI) wafer in which the backside silicon handler has been completely removed, thereby facilitating improved device performance and highly efficient thermal tuning of the operating wavelength of the optical device. Moreover, the semiconductor die may be a VLSI chip that provides power, and serves as a mechanical handler and/or an electrical driver. The thermal tuning efficiency of the substrateless optical device may be enhanced by over 100× relative to an optical device with an intact substrate, and by 5× relative to an optical device in which the substrate has only been removed in proximity to the optical device.

    摘要翻译： 在混合集成模块中，将半导体管芯面对面地机械耦合到已经去除衬底的集成器件。 例如，集成电路可以包括制造在绝缘体上硅（SOI）晶片上的光学器件，其中背面硅处理器已经被完全去除，从而有助于改进器件性能和高效率地调谐工作波长 光学装置。 此外，半导体管芯可以是提供电力并用作机械处理器和/或电驱动器的VLSI芯片。 相对于具有完整衬底的光学器件，无基底光学器件的热调谐效率可以提高超过100倍，并且相对于其中衬底仅在光学器件附近被去除的光学器件可以提高5倍。

    Optical device with enhanced mechanical strength
    3.
    发明授权
    Optical device with enhanced mechanical strength 有权
    具有增强机械强度的光学装置

    公开(公告)号：US08600201B2

    公开(公告)日：2013-12-03

    申请号：US13032561

    申请日：2011-02-22

    申请人： Hiren D. Thacker ,  Ivan Shubin ,  John E. Cunningham

    发明人： Hiren D. Thacker ,  Ivan Shubin ,  John E. Cunningham

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12007

    摘要： An optical device implemented on a substrate (such as silicon) is described. This optical device includes a wavelength-sensitive optical component with a high thermal resistance to a surrounding external environment and a low thermal resistance to a localized thermal-tuning mechanism (such as a heater), which modifies a temperature of the wavelength-sensitive optical component, thereby specifying an operating wavelength of the wavelength-sensitive optical component. In particular, the thermal resistance associated with a thermal dissipation path from the thermal-tuning mechanism to the external environment via the substrate is increased by removing a portion of the substrate to create a gap that is proximate to the thermal-tuning mechanism and the wavelength-sensitive optical component. Furthermore, the optical device includes a binder material mechanically coupled to the substrate and proximate to the gap, thereby maintaining a mechanical strength of the optical device.

    摘要翻译： 描述了在衬底（例如硅）上实现的光学器件。 该光学器件包括对周围的外部环境具有高热阻的波长敏感的光学部件和对局部的热调谐机构（例如加热器）的低热阻，其改变了波长敏感光学部件的温度 从而指定波长敏感光学部件的工作波长。 特别地，通过去除衬底的一部分以产生靠近热调谐机构的间隙和波长的距离，与通过衬底从热调谐机构到外部环境的散热路径相关联的热阻增加 敏感光学部件。 此外，光学装置包括机械耦合到基板并且靠近间隙的粘合剂材料，从而保持光学装置的机械强度。

    CHIP PACKAGE TO SUPPORT HIGH-FREQUENCY PROCESSORS
    5.
    发明申请
    CHIP PACKAGE TO SUPPORT HIGH-FREQUENCY PROCESSORS 有权
    芯片包支持高频处理器

    公开(公告)号：US20130003310A1

    公开(公告)日：2013-01-03

    申请号：US13171072

    申请日：2011-06-28

    申请人： Kannan Raj ,  Ivan Shubin ,  John E. Cunningham

    发明人： Kannan Raj ,  Ivan Shubin ,  John E. Cunningham

    IPC分类号： H05K7/00 ,  H05K7/20

    CPC分类号： H05K7/1092 ,  H01L23/5384 ,  H01L25/18 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00

    摘要： A chip package includes a processor, an interposer chip and a voltage regulator module (VRM). The interposer chip is electrically coupled to the processor by first electrical connectors proximate to a surface of the interposer chip. Moreover, the interposer chip includes second electrical connectors proximate to another surface of the interposer chip, which are electrically coupled to the first electrical connectors by through-substrate vias (TSVs) in the interposer chip. Note that the second electrical connectors can electrically couple the interposer chip to a circuit board. Furthermore, the VRM is electrically coupled to the processor by the interposer chip, and is proximate to the processor in the chip package, thereby reducing voltage droop. For example, the VRM may be electrically coupled to the surface of the interposer chip, and may be adjacent to the processor. Alternatively, the VRM may be electrically coupled to the other surface of the interposer chip.

    摘要翻译： 芯片封装包括处理器，插入器芯片和电压调节器模块（VRM）。 插入器芯片通过靠近插入器芯片的表面的第一电连接器电耦合到处理器。 此外，插入器芯片包括靠近插入器芯片的另一表面的第二电连接器，其通过插入器芯片中的贯穿衬底通孔（TSV）电耦合到第一电连接器。 注意，第二电连接器可以将插入器芯片电连接到电路板。 此外，VRM通过插入器芯片电耦合到处理器，并且靠近芯片封装中的处理器，从而降低电压下降。 例如，VRM可以电耦合到插入器芯片的表面，并且可以与处理器相邻。 或者，VRM可以电耦合到插入器芯片的另一表面。

    OPTICAL DEVICE WITH ENHANCED MECHANICAL STRENGTH
    7.
    发明申请
    OPTICAL DEVICE WITH ENHANCED MECHANICAL STRENGTH 有权
    具有增强机械强度的光学装置

    公开(公告)号：US20120213467A1

    公开(公告)日：2012-08-23

    申请号：US13032561

    申请日：2011-02-22

    申请人： Hiren D. Thacker ,  Ivan Shubin ,  John E. Cunningham

    发明人： Hiren D. Thacker ,  Ivan Shubin ,  John E. Cunningham

    IPC分类号： G02B6/12 ,  B05D5/00

    CPC分类号： G02B6/12007

    摘要： An optical device implemented on a substrate (such as silicon) is described. This optical device includes a wavelength-sensitive optical component with a high thermal resistance to a surrounding external environment and a low thermal resistance to a localized thermal-tuning mechanism (such as a heater), which modifies a temperature of the wavelength-sensitive optical component, thereby specifying an operating wavelength of the wavelength-sensitive optical component. In particular, the thermal resistance associated with a thermal dissipation path from the thermal-tuning mechanism to the external environment via the substrate is increased by removing a portion of the substrate to create a gap that is proximate to the thermal-tuning mechanism and the wavelength-sensitive optical component. Furthermore, the optical device includes a binder material mechanically coupled to the substrate and proximate to the gap, thereby maintaining a mechanical strength of the optical device.

    摘要翻译： 描述了在衬底（例如硅）上实现的光学器件。 该光学器件包括对周围的外部环境具有高热阻的波长敏感的光学部件和对局部的热调谐机构（例如加热器）的低热阻，其改变了波长敏感光学部件的温度 从而指定波长敏感光学部件的工作波长。 特别地，通过去除衬底的一部分以产生靠近热调谐机构的间隙和波长的距离，与通过衬底从热调谐机构到外部环境的散热路径相关联的热阻增加 敏感光学部件。 此外，光学装置包括机械耦合到基板并且靠近间隙的粘合剂材料，从而保持光学装置的机械强度。

    Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices
    8.
    发明授权
    Electrical contacts on top of waveguide structures for efficient optical modulation in silicon photonic devices 有权
    波导结构顶部的电触点用于硅光子器件中的有效光调制

    公开(公告)号：US08014636B2

    公开(公告)日：2011-09-06

    申请号：US12389608

    申请日：2009-02-20

    申请人： Ivan Shubin ,  Guoliang Li ,  John E. Cunningham ,  Ashok Krishnamoorthy ,  Xuezhe Zheng

    发明人： Ivan Shubin ,  Guoliang Li ,  John E. Cunningham ,  Ashok Krishnamoorthy ,  Xuezhe Zheng

    IPC分类号： G02F1/035 ,  H01L29/06 ,  H04B10/04

    CPC分类号： G02F1/025 ,  B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2201/12 ,  Y10S977/742

    摘要： A phase modulation waveguide structure includes one of a semiconductor and a semiconductor-on-insulator substrate, a doped semiconductor layer formed over the one of a semiconductor and a semiconductor-on-insulator substrate, the doped semiconductor portion including a waveguide rib protruding from a surface thereof not in contact with the one of a semiconductor and a semiconductor-on-insulator substrate, and an electrical contact on top of the waveguide rib. The electrical contact is formed of a material with an optical refractive index close to that of a surrounding oxide layer that surrounds the waveguide rib and the electrical contact and lower than the optical refractive index of the doped semiconductor layer. During propagation of an optical mode within the waveguide structure, the electrical contact isolates the optical mode between the doped semiconductor layer and a metal electrode contact on top of the electrical contact.

    摘要翻译： 相位调制波导结构包括半导体和绝缘体上半导体衬底之一，在半导体和绝缘体上半导体衬底之上形成的掺杂半导体层，掺杂半导体部分包括从 其表面不与半导体和绝缘体上半导体衬底之一接触，并且在波导肋的顶部上的电接触。 电接触由光学折射率接近包围波导肋和电接触并且低于掺杂半导体层的光折射率的周围氧化物层的材料形成。 在波导结构内的光学模式的传播期间，电接触将掺杂半导体层和电接触顶部上的金属电极接触之间的光学模式隔离开。

    Ultra-compact photodetector on an optical waveguide
    10.
    发明授权
    Ultra-compact photodetector on an optical waveguide 有权
    在光波导上的超小型光电探测器

    公开(公告)号：US09164231B2

    公开(公告)日：2015-10-20

    申请号：US13205484

    申请日：2011-08-08

    申请人： Ivan Shubin ,  John E. Cunningham

    发明人： Ivan Shubin ,  John E. Cunningham

    IPC分类号： G02B6/12 ,  G02B6/42 ,  G02B6/122

    CPC分类号： G02B6/12004 ,  G02B6/1228 ,  G02B6/4214

    摘要： An integrated circuit is described. This integrated circuit includes an optical waveguide defined in a semiconductor layer, and an optical detector disposed on top of the optical waveguide. Moreover, the optical waveguide has an end with a reflecting facet. For example, the reflective facet may be defined using an anisotropic etch of the semiconductor layer. This reflecting facet reflects light propagating in a plane of the optical waveguide out of the plane into the optical detector, thereby providing a photodetector with high optical responsivity, including an extremely low dark current (and, thus, high photosensitivity) and an extremely small capacitance (and, thus, high electrical bandwidth).

    摘要翻译： 描述了集成电路。 该集成电路包括限定在半导体层中的光波导和设置在光波导顶部的光学检测器。 此外，光波导具有具有反射面的端部。 例如，反射小面可以使用半导体层的各向异性蚀刻来定义。 该反射面反射在平面内的光波导的平面内传播的光进入光检测器，从而提供具有高光学响应性的光电检测器，其包括极低的暗电流（并且因此具有高的光敏性）和极小的电容 （并因此具有高的电气带宽）。