公开(公告)号：US09776575B1

公开(公告)日：2017-10-03

申请号：US15142091

申请日：2016-04-29

Applicant: Yao-Huang Liu

Inventor： Yao-Huang Liu

IPC: B60R9/058 ,  B60R9/10 ,  B60R9/06

CPC classification number: B60R9/10 ,  B60R9/06

Abstract: A bicycle carrier includes a main shaft having a spacer, two upper stands mounted on the main shaft and abutting the spacer, two carrying racks mounted on the main shaft and respectively abutting the upper stands, two lower stands mounted on the main shaft and respectively abutting the carrying racks, and two end caps mounted on the main shaft and respectively abutting the lower stands. The spacer has two ends each provided with a first ratchet ring. Each of the upper stands has a first mounting ring which has two ends each provided with a second ratchet ring. Each of the carrying racks has a second mounting ring which has two ends each provided with a third ratchet ring. Each of the lower stands has a third mounting ring which has two ends each provided with a fourth ratchet ring.

公开(公告)号：US09156413B2

公开(公告)日：2015-10-13

申请号：US14149855

申请日：2014-01-08

Applicant: Yao-Huang Liu

Inventor： Yao-Huang Liu

IPC: B60R9/00 ,  B60R11/00 ,  B60R7/00 ,  B60R9/10 ,  B60R9/08 ,  B60R9/06 ,  B60R9/02

CPC classification number: B60R9/10 ,  B25H1/0014 ,  B60R9/02 ,  B60R9/06 ,  B60R9/08 ,  B60R11/00 ,  B62H3/00

Abstract: A fixing mount of a bicycle carrier contains a support rod of a bicycle carrier, a body, at least one cable tie, a connector, and a retainer. The body includes a large-diameter end, a through hole, and a small-diameter end. The large-diameter end has a first arcuate supporting face, a second arcuate supporting face and a third arcuate supporting face. The small-diameter end has a locking groove, and the body also includes plural locking elements. The connector includes a recess, a convex bottom surface, two coupling tabs, and each coupling tab has a concaved top surface and an aperture. The connector further includes plural first extending pieces, and each first extending piece has a first pore. Between any two adjacent extending blocks is defined a notch. The retainer includes at least one second extending piece and a plurality of pegs, and each extending piece has a second pore.

Abstract translation: 自行车托架的固定支架包括自行车托架的支撑杆，主体，至少一个电缆扎带，连接器和保持器。 主体包括大直径端，通孔和小直径端。 大直径端部具有第一弓形支撑面，第二弓形支撑面和第三弓形支撑面。 小直径端部具有锁定槽，并且主体还包括多个锁定元件。 连接器包括凹部，凸底面，两个连接片，每个连接片具有凹面顶表面和孔。 连接器还包括多个第一延伸件，并且每个第一延伸件具有第一孔。 在任何两个相邻的延伸块之间定义一个凹口。 保持器包括至少一个第二延伸件和多个钉，并且每个延伸件具有第二孔。

公开(公告)号：US08962474B2

公开(公告)日：2015-02-24

申请号：US13290791

申请日：2011-11-07

Applicant: Hong Yu ,  Huang Liu

Inventor： Hong Yu ,  Huang Liu

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices with air gaps around the through-silicon via are formed. Embodiments include forming a first cavity in a substrate, filling the first cavity with a sacrificial material, forming a second cavity in the substrate, through the sacrificial material, by removing a portion of the sacrificial material and a portion of the substrate below the sacrificial material, filling the second cavity with a conductive material, removing a remaining portion of the sacrificial material to form an air gap between the conductive material and the substrate, and forming a cap over the air gap.

Abstract translation: 形成具有穿过硅通孔的气隙的半导体器件。 实施例包括在衬底中形成第一腔，用牺牲材料填充第一腔，通过牺牲材料在衬底中形成第二腔，通过去除牺牲材料的一部分和牺牲材料下方的一部分衬底 用导电材料填充第二腔，去除牺牲材料的剩余部分以在导电材料和衬底之间形成气隙，并在气隙上形成帽。

公开(公告)号：US08940637B2

公开(公告)日：2015-01-27

申请号：US13542256

申请日：2012-07-05

Applicant: Lup San Leong ,  Zheng Zou ,  Alex Kai Hung See ,  Hai Cong ,  Xuesong Rao ,  Yun Ling Tan ,  Huang Liu

Inventor： Lup San Leong ,  Zheng Zou ,  Alex Kai Hung See ,  Hai Cong ,  Xuesong Rao ,  Yun Ling Tan ,  Huang Liu

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48

CPC classification number: H01L23/481 ,  H01L21/02107 ,  H01L21/486 ,  H01L21/76898 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/13009 ,  H01L2224/1357

Abstract: Semiconductor devices with through silicon vias (TSVs) are formed without copper contamination. Embodiments include exposing a passivation layer surrounding a bottom portion of a TSV in a silicon substrate, forming a silicon composite layer over the exposed passivation layer and over a bottom surface of the silicon substrate, forming a hardmask layer over the silicon composite layer and over the bottom surface of the silicon substrate, removing a section of the silicon composite layer around the bottom portion of the TSV using the hardmask layer as a mask, re-exposing the passivation layer, and removing the hardmask layer and the re-exposed passivation layer to expose a contact for the bottom portion of the TSV.

Abstract translation: 具有贯通硅通孔（TSV）的半导体器件不形成铜污染。 实施例包括在硅衬底中暴露围绕TSV的底部的钝化层，在暴露的钝化层上方并在硅衬底的底表面上形成硅复合层，在硅复合层上形成硬掩模层， 硅衬底的底表面，使用硬掩模层作为掩模去除围绕TSV的底部部分的硅复合层的一部分，再次暴露钝化层，以及将硬掩模层和再曝光的钝化层移除到 暴露TSV底部的触点。

公开(公告)号：US20140339496A1

公开(公告)日：2014-11-20

申请号：US13895421

申请日：2013-05-16

Applicant: Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

Inventor： Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

IPC: H01L33/22 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/12041

Abstract: A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

Abstract translation: 垂直发光二极管（VLED）裸片包括具有第一类型限制层的外延结构，在被配置为发光的多量子阱（MQW）上的第一类型限制层上的有源层和第二类型限制层 约束层具有粗糙表面。 在第一实施例中，粗糙表面包括在其主表面上具有深度（d）的孔的图案，其由主表面上的高度（h）的突起图案包围。 在第二实施例中，粗糙表面包括由二次突起图案包围的一次隆起图案。

公开(公告)号：US08883634B2

公开(公告)日：2014-11-11

申请号：US13171478

申请日：2011-06-29

Applicant: Hong Yu ,  Huang Liu

Inventor： Hong Yu ,  Huang Liu

IPC: H01L21/28 ,  H01L21/768 ,  B81B3/00 ,  H01L23/48

CPC classification number: H01L23/5226 ,  B81B3/0072 ,  B81B2207/015 ,  B81B2207/07 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a device is disclosed. A substrate having first and second major surfaces is provided. A stress buffer is formed in the substrate. A through silicon via (TSV) contact is formed between the stress buffer. The stress buffer has a depth less than a depth of the TSV contact. The stress buffer alleviates stress created by the difference in coefficient thermal expansion (CTE) between the TSV contact and the substrate.

Abstract translation: 公开了一种用于形成装置的方法。 提供具有第一和第二主表面的基板。 在衬底中形成应力缓冲器。 在应力缓冲器之间形成贯通硅通孔（TSV）接触。 应力缓冲器的深度小于TSV接触深度。 应力缓冲器减轻由TSV接触和基板之间的系数热膨胀差（CTE）产生的应力。

公开(公告)号：US08835953B2

公开(公告)日：2014-09-16

申请号：US13203234

申请日：2010-03-11

Applicant: Wen-Huang Liu ,  Trung-Tri Doan ,  Chuong-Anh Tran

Inventor： Wen-Huang Liu ,  Trung-Tri Doan ,  Chuong-Anh Tran

IPC: H01L33/08 ,  H01L33/60 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.

Abstract translation: 包括具有磷光体层的LED的照明装置包括可以发射具有360nm和490nm之间的峰值发射波长的光的多个LED组; 以及覆盖多个LED组中的相应的LED组的多组荧光体层。 多个LED组中的至少两个分别具有彼此不同的峰值发射波长。 多组荧光体层中的至少一个荧光体层的主要荧光波长范围为500nm至580nm，并且至少其中一组荧光体层的主荧光波长范围为590nm至650nm。

公开(公告)号：US20140234993A1

公开(公告)日：2014-08-21

申请号：US13768870

申请日：2013-02-15

Applicant: Liang LI ,  Zheng ZOU ,  Huang LIU ,  Alex SEE

Inventor： Liang LI ,  Zheng ZOU ,  Huang LIU ,  Alex SEE

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01B2210/56

Abstract: Methods of deducing oxide thickness using calculated and measured scattering spectra are provided. Embodiments include depositing an oxide over a semiconductor wafer, reducing the oxide from a portion of the semiconductor wafer, and deducing a thickness of oxide remaining at a location within the portion using scatterometric metrology. Embodiments further include deducing the thickness by: calculating scattering spectra for a plurality of oxide thicknesses, producing calculated scattering spectra, monitoring scattering spectra at the location within the portion of the semiconductor wafer, comparing the monitored scattering spectra at the location to the calculated scattering spectra, determining a closest matching calculated scattering spectra to the monitored scattering spectra at the location, and obtaining an oxide thickness corresponding to the closest matching calculated scattering spectra.

Abstract translation: 提供了使用计算和测量的散射光谱推导氧化物厚度的方法。 实施例包括在半导体晶片上沉积氧化物，从半导体晶片的一部分还原氧化物，并使用散射测量法推算残留在该部分内部的氧化物的厚度。 实施例还包括通过以下方式推导厚度：计算多个氧化物厚度的散射光谱，产生计算的散射光谱，监测半导体晶片部分内的位置处的散射光谱，将该位置处的所监视的散射光谱与计算出的散射光谱进行比较 确定与所述位置处的所监视的散射光谱最接近的匹配计算的散射光谱，以及获得对应于最接近的匹配计算的散射光谱的氧化物厚度。

公开(公告)号：US08808897B2

公开(公告)日：2014-08-19

申请号：US13185919

申请日：2011-07-19

Applicant: Mao-huang Liu ,  Kuan-yi Lee

Inventor： Mao-huang Liu ,  Kuan-yi Lee

IPC: H01M8/18 ,  H01M8/20 ,  H01M4/96

CPC classification number: H01M8/188 ,  H01M4/96 ,  Y02E60/528

Abstract: An electrode structure of a vanadium redox flow battery is disclosed, which includes a proton-exchange membrane, two graphite papers, two graphite felt units, two pads, two graphite polar plates, two metal plates and a lock-fixing device which are symmetrically stacked in sequence from center to outside. wherein each graphite polar plate has the flow channels with a grooved structure, and each graphite felt unit is embedded in the flow channels of one of the graphite polar plates, and then the graphite felt units are covered by the graphite papers such that the different electrolytes flow in their corresponding flow channels. The storage tanks of vanadium electrolyte are connected through the connection pipelines, and the redox reaction is performed through the flows of the vanadium electrolyte. The electrode structure of the vanadium redox flow battery can be stacked for forming a large-scale electrode structure to increase the electrical power.

Abstract translation: 公开了一种钒氧化还原液流电池的电极结构，其包括对称堆叠的质子交换膜，两个石墨纸，两个石墨毡单元，两个垫，两个石墨极板，两个金属板和锁定固定装置 从中到外。 其中每个石墨极板具有带沟槽结构的流动通道，并且每个石墨毡单元嵌入在一个石墨极板的流动通道中，然后石墨纸覆盖石墨纸，使得不同的电解质 流入其相应的流量通道。 钒电解液的储罐通过连接管道连接，氧化还原反应通过钒电解液的流动进行。 可以层叠钒氧化还原液流电池的电极结构以形成大规模的电极结构以增加电力。

公开(公告)号：US20140151630A1

公开(公告)日：2014-06-05

申请号：US13693199

申请日：2012-12-04

Applicant: Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

Inventor： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC: H01L33/04

CPC classification number: H01L33/0079 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0217 ,  H01S5/18375 ,  H01S5/34333

Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。