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    Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication
    1.
    发明授权
    Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication 有权
    具有凹陷电极和光提取结构和制造方法的发光二极管（LED）裸片

    公开(公告)号：US08759128B2

    公开(公告)日：2014-06-24

    申请号：US13426705

    申请日：2012-03-22

    Applicant: Jiunn-Yi Chu ,  Trung Tri Doan

    Inventor： Jiunn-Yi Chu ,  Trung Tri Doan

    IPC: H01L33/00 ,  H01L21/461 ,  H01L21/44 ,  H01L33/38

    CPC classification number: H01L21/461 ,  H01L21/44 ,  H01L33/22 ,  H01L33/382 ,  H01L2933/0016

    Abstract: A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode.

    Abstract translation: 发光二极管（LED）裸片包括具有n型限制层的半导体衬底，与被配置为发射电磁辐射的n型限制层电接触的多量子阱（MQW）层，p型限制层 与多量子阱（MQW）层电接触; n型限制层上的多个光提取结构被配置成散射电磁辐射; 以及嵌入在靠近光提取结构的n型约束层中的凹槽中的电极。 一种制造方法包括：形成半导体衬底; 在具有侧壁和平坦底面的n型限制层中形成凹部; 在所述凹部中形成电极，所述电极包括符合所述侧壁和所述凹部的所述底表面的导电材料; 平面化电极; 以及在靠近电极的n型约束层中形成多个光提取结构。

    Method of separating semiconductor dies
    9.
    发明授权
    Method of separating semiconductor dies 有权
    分离半导体管芯的方法

    公开(公告)号：US07829440B2

    公开(公告)日：2010-11-09

    申请号：US11835289

    申请日：2007-08-07

    Applicant: Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    Inventor： Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Chen-Fu Chu ,  Trung Tri Doan

    IPC: H01L21/301

    CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。 除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。 停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。 可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割加热后的重金属硬度应足够强大。 可以将胶带加入到晶片中，并且可以使用断路器将模具分开。 可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES
    10.
    发明申请
    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
    金属器件外延结构的保护

    公开(公告)号：US20080087875A1

    公开(公告)日：2008-04-17

    申请号：US11548642

    申请日：2006-10-11

    Applicant: Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

    Inventor： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

    IPC: H01L29/06

    CPC classification number: H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

    Abstract translation: 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

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