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270 条记录 (耗时 0.017 秒)

    Anchored damascene structures
    1.
    发明授权
    Anchored damascene structures 有权
    锚定镶嵌结构

    公开(公告)号：US08822331B2

    公开(公告)日：2014-09-02

    申请号：US13038580

    申请日：2011-03-02

    申请人： David Lu ,  Horng-Huei Tseng ,  Syun-Ming Jang

    发明人： David Lu ,  Horng-Huei Tseng ,  Syun-Ming Jang

    IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

    CPC分类号： H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An anchored conductive damascene buried in a multi-density dielectric layer and method for forming the same, the anchored conductive damascene including a dielectric layer with an opening extending through a thickness of the dielectric layer; wherein the dielectric layer comprises at least one relatively higher density portion and a relatively lower density portion, the relatively lower density portion forming a contiguous major portion of the dielectric layer; and, wherein the opening in the relatively lower density portion has a lateral dimension relatively larger compared to the relatively higher density portion to form anchoring steps.

    摘要翻译： 埋置在多密度电介质层中的锚定导电镶嵌体及其形成方法，所述锚定导电镶嵌体包括具有延伸穿过介电层厚度的开口的介电层; 其中所述电介质层包括至少一个相对较高密度的部分和相对较低的密度部分，所述较低密度部分形成所述电介质层的连续主要部分; 并且其中相对较低密度部分中的开口具有与相对较高密度部分相比较大的横向尺寸以形成锚固步骤。

    Contact structure formed using supercritical cleaning fluid and ALCVD
    3.
    发明授权
    Contact structure formed using supercritical cleaning fluid and ALCVD 有权
    使用超临界清洗液和ALCVD形成接触结构

    公开(公告)号：US07462561B2

    公开(公告)日：2008-12-09

    申请号：US11044929

    申请日：2005-01-27

    申请人： David Lu ,  Horng-Huei Tseng ,  Syun-Ming Jang

    发明人： David Lu ,  Horng-Huei Tseng ,  Syun-Ming Jang

    IPC分类号： H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/76831 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76843

    摘要： A supercritical fluid such as CO2 cleans an opening formed in a Si-containing dielectric material and removes polymeric and organic residue produced by the etching process used to form the opening. The opening may be a contact, via or other opening and may include a cross-sectional area of less than 0.2 or 0.1 micron square. Atomic layer chemical vapor deposition (ALCVD) is used to form a thin barrier layer within the opening after the supercritical cleaning. A conductive material is formed over the barrier layer to provide a contact structure with improved contact resistance in VLSI devices.

    摘要翻译： 超临界流体如CO 2清洗形成在含Si电介质材料中的开口，并去除通过用于形成开口的蚀刻工艺产生的聚合物和有机残留物。 开口可以是接触件，通孔或其它开口，并且可以包括小于0.2或0.1微米平方的横截面面积。 在超临界清洗后，原子层化学气相沉积（ALCVD）用于在开口内形成薄的阻挡层。 在阻挡层上形成导电材料以提供具有改进的VLSI器件接触电阻的接触结构。

    Interconnect with composite layers and method for fabricating the same
    6.
    发明授权
    Interconnect with composite layers and method for fabricating the same 有权
    与复合层互连及其制造方法

    公开(公告)号：US07265447B2

    公开(公告)日：2007-09-04

    申请号：US11240216

    申请日：2005-09-30

    申请人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    发明人： Chen-Hua Yu ,  Horng-Huei Tseng ,  Syun-Ming Jang ,  Chenming Hu

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76846

    摘要： Composite ALD-formed diffusion barrier layers. In a preferred embodiment, a composite conductive layer is composed of a diffusion barrier layer and/or a low-resistivity metal layer formed by atomic layer deposition (ALD) lining a damascene opening in dielectrics, serving as diffusion blocking and/or adhesion improvement. The preferred composite diffusion barrier layers are dual titanium nitride layers or dual tantalum nitride layers, triply laminar of tantalum, tantalum nitride and tantalum-rich nitride, or tantalum, tantalum nitride and tantalum, formed sequentially on the opening by way of ALD.

    摘要翻译： 复合ALD形成的扩散阻挡层。 在优选实施例中，复合导电层由扩散阻挡层和/或由电介质中的镶嵌开口衬底的原子层沉积（ALD）形成的低电阻金属层组成，用作扩散阻挡和/或粘附改善。 优选的复合扩散阻挡层是通过ALD在开口上依次形成的双氮化钛层或双氮化钽层，三层层状的钽，氮化钽和富钽的氮化物，或钽，氮化钽和钽。

    Method for forming a multi-layer seed layer for improved Cu ECP
    7.
    发明授权
    Method for forming a multi-layer seed layer for improved Cu ECP 有权
    用于形成用于改善Cu ECP的多层种子层的方法

    公开(公告)号：US07265038B2

    公开(公告)日：2007-09-04

    申请号：US10723509

    申请日：2003-11-25

    申请人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    发明人： Ping-Kun Wu ,  Horng-Huei Tseng ,  Chine-Gie Lo ,  Chao-Hsiung Wang ,  Shau-Lin Shue

    IPC分类号： H01L21/26

    CPC分类号： H01L21/76807 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A copper filled damascene structure and method for forming the same the method including providing a substrate comprising a semiconductor substrate; forming an insulator layer on the substrate; forming a damascene opening through a thickness portion of the insulator layer; forming a diffusion barrier layer to line the damascene opening; forming a first seed layer overlying the diffusion barrier; plasma treating the first seed layer in-situ with a first treatment plasma comprising plasma source gases selected from the group consisting of argon, nitrogen, hydrogen, and NH3; forming a second seed layer overlying the first seed layer; forming a copper layer overlying the second seed layer according to an electro-chemical plating (ECP) process to fill the damascene opening; and, planarizing the copper layer to form a metal interconnect structure.

    摘要翻译： 铜填充镶嵌结构及其形成方法，包括提供包括半导体衬底的衬底; 在所述基板上形成绝缘体层; 通过所述绝缘体层的厚度部分形成镶嵌开口; 形成扩散阻挡层以使所述镶嵌开口成线; 形成覆盖所述扩散阻挡层的第一晶种层; 用包含选自氩，氮，氢和NH 3的等离子体源气体的第一处理等离子体原位处理第一籽晶层; 形成覆盖所述第一种子层的第二种子层; 根据电化学电镀（ECP）工艺形成覆盖在第二晶种层上的铜层以填充镶嵌开口; 并且平坦化铜层以形成金属互连结构。

    Stable metal structure with tungsten plug
    8.
    发明授权
    Stable metal structure with tungsten plug 有权
    稳定的金属结构与钨丝塞

    公开(公告)号：US07224068B2

    公开(公告)日：2007-05-29

    申请号：US10919875

    申请日：2004-08-17

    申请人： Horng-Huei Tseng ,  Syun-Ming Jang

    发明人： Horng-Huei Tseng ,  Syun-Ming Jang

    IPC分类号： H01L23/48

    CPC分类号： H01L21/76801 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： In the preferred embodiment, a thick regular-k dielectric is formed on a substrate. A tungsten plug is formed in the thick regular-k dielectric. The thick regular-k dielectric is recessed and a thin low-k dielectric is formed on the thick regular-k dielectric. The thin low-k dielectric acts as a glue layer and as an etch stop layer. A thick low-k dielectric is formed on the thin low-k material. Optionally, an opening is formed through the thick low-k dielectric to expose the tungsten plug. The opening is then filled with copper or copper alloys.

    摘要翻译： 在优选实施例中，在基板上形成厚的正常k电介质。 在厚规则k电介质中形成钨塞。 厚的普通k电介质是凹陷的，并且在厚的规则k电介质上形成薄的低k电介质。 薄的低k电介质用作胶层和作为蚀刻停止层。 在薄的低k材料上形成厚的低k电介质。 可选地，通过厚的低k电介质形成开口以暴露钨插塞。 然后用铜或铜合金填充开口。

    Self-aligned contact for silicon-on-insulator devices
    10.
    发明授权
    Self-aligned contact for silicon-on-insulator devices 有权
    绝缘体上硅器件的自对准接触

    公开(公告)号：US07173305B2

    公开(公告)日：2007-02-06

    申请号：US10409810

    申请日：2003-04-08

    申请人： Fu-Liang Yang ,  Yee-Chia Yeo ,  Horng-Huei Tseng ,  Chenming Hu

    发明人： Fu-Liang Yang ,  Yee-Chia Yeo ,  Horng-Huei Tseng ,  Chenming Hu

    IPC分类号： H01L21/336 ,  H01L29/772

    CPC分类号： H01L29/785 ,  H01L21/76897 ,  H01L29/41791 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66795 ,  H01L2029/7858 ,  H01L2924/3011

    摘要： A method for forming a self-aligned contact to an ultra-thin body transistor first providing an ultra-thin body transistor with source and drain regions operated by a gate stack; forming a contact spacer on the gate stack; forming a passivation layer overlying the transistor; forming a contact hole in the passivation layer exposing the contact spacer and the source/drain regions; filling the contact hole with an electrically conductive material; and establishing electrical communication with the source/drain region.

    摘要翻译： 一种用于形成与超薄体晶体管的自对准接触的方法，其首先提供具有由栅极叠层操作的源极和漏极区域的超薄体晶体管; 在栅极堆叠上形成接触间隔物; 形成覆盖晶体管的钝化层; 在所述钝化层中形成暴露所述接触间隔物和所述源极/漏极区域的接触孔; 用导电材料填充接触孔; 并建立与源极/漏极区域的电连通。