发明申请
- 专利标题： METHOD FOR FABRICATING RELIABLE SEMICONDUCTOR STRUCTURE
- 专利标题（中）： 制造可靠的半导体结构的方法
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申请号： US11613462申请日： 2006-12-20
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公开(公告)号： US20070099402A1公开(公告)日： 2007-05-03
- 发明人: Horng-Huei Tseng , Chung-Hu Ge , Chao-Hsiung Wang
- 申请人： Horng-Huei Tseng , Chung-Hu Ge , Chao-Hsiung Wang
- 申请人地址： TW Hsin-Chu 300-77
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsin-Chu 300-77
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L21/66 ; G01R31/26
摘要：
A reliable semiconductor structure and its fabrication method. Active regions and/or scribe lines on a semiconductor substrate are configured along a crack resistant crystalline direction. Thermal cracking due to the abrupt temperature ramp of rapid thermal processing can be avoided.
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