公开(公告)号：US08440580B2

公开(公告)日：2013-05-14

申请号：US11853475

申请日：2007-09-11

Applicant: Neng-Kuo Chen ,  Chao-Ching Hsieh ,  Chien-Chung Huang

Inventor： Neng-Kuo Chen ,  Chao-Ching Hsieh ,  Chien-Chung Huang

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/3185 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823412 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7843

Abstract: A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then, a post-single step deposition process is conducted to form a cap layer constituting as a sparse film on the stacked layer, wherein the cap layer has a thickness of at least 10% of the total film thickness.

Abstract translation: 提供了一种制造氮化硅间隙填充层的方法。 进行预多级形成处理，以在基板上形成构成致密膜的层叠层。 然后，进行单一步骤沉积处理，以在层叠层上形成构成稀薄膜的覆盖层，其中盖层的厚度为总膜厚度的至少10％。

公开(公告)号：US08405143B2

公开(公告)日：2013-03-26

申请号：US13031910

申请日：2011-02-22

Applicant: Chun-Hsien Lin ,  Chao-Ching Hsieh

Inventor： Chun-Hsien Lin ,  Chao-Ching Hsieh

IPC: H01L29/792

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/7843

Abstract: A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer and a metal layer. The spacer is on a sidewall of the gate structure. The source/drain regions are in the substrate beside the gate structure.

Abstract translation: 提供了包括衬底，栅极结构，间隔物和源极/漏极区域的半导体器件。 栅极结构在衬底上，其中栅极结构从底部到顶部包括高k层，功函数金属层，润湿层和金属层。 间隔物位于栅极结构的侧壁上。 源极/漏极区域位于栅极结构旁边的衬底中。

公开(公告)号：US20120122288A1

公开(公告)日：2012-05-17

申请号：US12944738

申请日：2010-11-12

Applicant: Chao-Ching Hsieh ,  Nien-Ting Ho

Inventor： Chao-Ching Hsieh ,  Nien-Ting Ho

IPC: H01L21/336

CPC classification number: H01L21/28052 ,  H01L21/2658 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7845

Abstract: During a salicide process, and before a second thermal treatment is performed to a silicide layer of a semiconductor substrate, a thermal conductive layer is formed to cover the silicide layer. The heat provided by the second thermal treatment can be conducted to the silicide layer uniformly through the thermal conductive layer. The thermal conductive layer can be a CESL layer, TiN, or amorphous carbon. Based on different process requirements, the thermal conductive layer can be removed optionally after the second thermal treatment is finished.

Abstract translation: 在自对准硅化物工艺期间，并且在对半导体衬底的硅化物层进行第二热处理之前，形成覆盖硅化物层的导热层。 通过第二热处理提供的热可以通过导热层均匀地传导到硅化物层。 导热层可以是CESL层，TiN或无定形碳。 基于不同的工艺要求，可以在第二热处理完成之后任选地去除导热层。

公开(公告)号：US20110140206A1

公开(公告)日：2011-06-16

申请号：US13031910

申请日：2011-02-22

Applicant: CHUN-HSIEN LIN ,  Chao-Ching Hsieh

Inventor： CHUN-HSIEN LIN ,  Chao-Ching Hsieh

IPC: H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/7843

Abstract: A semiconductor device including a substrate, a gate structure, a spacer and source/drain regions is provided. The gate structure is on the substrate, wherein the gate structure includes, from bottom to top, a high-k layer, a work function metal layer, a wetting layer and a metal layer. The spacer is on a sidewall of the gate structure. The source/drain regions are in the substrate beside the gate structure.

Abstract translation: 提供了包括衬底，栅极结构，间隔物和源极/漏极区域的半导体器件。 栅极结构在衬底上，其中栅极结构从底部到顶部包括高k层，功函数金属层，润湿层和金属层。 间隔物位于栅极结构的侧壁上。 源极/漏极区域位于栅极结构旁边的衬底中。

公开(公告)号：US07553762B2

公开(公告)日：2009-06-30

申请号：US11673145

申请日：2007-02-09

Applicant: Tzung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yu-Lan Chang ,  Yi-Wei Chen

Inventor： Tzung-Yu Hung ,  Chun-Chieh Chang ,  Chao-Ching Hsieh ,  Yu-Lan Chang ,  Yi-Wei Chen

IPC: H01L21/20

CPC classification number: H01L21/28518

Abstract: The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion barrier layer is formed on the grain boundary sealing layer. Thereafter, a rapid thermal process is performed to transform a portion of the nickel-noble metal layer into a metal silicide layer. Finally, the oxygen diffusion barrier layer, the grain boundary sealing layer and the rest portion of the nickel-noble metal layer are removed.

Abstract translation: 本发明提供一种形成金属硅化物层的方法。 该方法包括提供衬底并在衬底上形成镍 - 贵金属层的步骤。 在镍 - 贵金属层上形成晶界密封层，然后在晶界密封层上形成氧扩散阻挡层。 此后，进行快速热处理以将一部分镍 - 贵金属层转变为金属硅化物层。 最后，除去氧扩散阻挡层，晶界密封层和镍 - 贵金属层的其余部分。

公开(公告)号：US20080254640A1

公开(公告)日：2008-10-16

申请号：US11733762

申请日：2007-04-10

Applicant: Yi-Wei Chen ,  Chun-Chieh Chang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Chao-Ching Hsieh

Inventor： Yi-Wei Chen ,  Chun-Chieh Chang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Chao-Ching Hsieh

IPC: H01L21/302

CPC classification number: H01L21/28052 ,  C23F1/08 ,  H01L21/28518 ,  H01L21/32134 ,  H01L21/6708 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching process, the rotating platform is rotated, and an etching solution is sprayed from a center region and a side region of the rotating platform toward the semiconductor substrate until the material layer is removed. Since the semiconductor substrate is etched by the etching solution sprayed from both the center region and the side region of the rotating platform, the etching uniformity of the semiconductor substrate is improved.

Abstract translation: 公开了去除材料层的方法。 首先，将半导体基板固定在旋转平台上，在半导体基板的表面上包含残留材料层。 之后，进行蚀刻处理。 在蚀刻工艺中，旋转平台旋转，并且蚀刻溶液从旋转平台的中心区域和侧部区域朝向半导体衬底喷射直到材料层被去除。 由于通过从旋转平台的中心区域和侧面区域喷射的蚀刻溶液蚀刻半导体衬底，所以提高了半导体衬底的蚀刻均匀性。

公开(公告)号：US20080171449A1

公开(公告)日：2008-07-17

申请号：US11623099

申请日：2007-01-15

Applicant: Chao-Ching Hsieh ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen ,  Yu-Lan Chang

Inventor： Chao-Ching Hsieh ,  Tzung-Yu Hung ,  Chun-Chieh Chang ,  Yi-Wei Chen ,  Yu-Lan Chang

IPC: H01L21/335 ,  H01L21/8232

CPC classification number: H01L21/02068 ,  H01L21/32134 ,  H01L29/665

Abstract: A method for cleaning suicide includes providing a substrate having at least an intergraded silicide and residues, sequentially performing an ammonia hydrogen peroxide (APM) mixture cleaning process and a vaporized hydrochloric acid-hydrogen peroxide mixture (HPM) cleaning process to remove the residues, and performing a sulfuric acid-hydrogen peroxide mixture (SPM) cleaning process to remove residuals of the vaporized HPM cleaning process.

Abstract translation: 一种清洁硅化物的方法包括提供至少具有层间硅化物和残留物的基底，依次进行氨过氧化氢（APM）混合物清洗工艺和蒸发的盐酸 - 过氧化氢混合物（HPM）清洗工艺以去除残余物，以及 执行硫酸 - 过氧化氢混合物（SPM）清洁过程以除去蒸发的HPM清洗过程的残留物。

公开(公告)号：US20080166841A1

公开(公告)日：2008-07-10

申请号：US11621576

申请日：2007-01-10

Applicant: Chao-Ching Hsieh

Inventor： Chao-Ching Hsieh

IPC: H01L21/8238 ,  H01L21/336

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

Abstract: The present invention provides a method of fabricating strained silicon channel MOS transistor, comprising providing a substrate, forming at least a gate structure on the substrate, forming a mask layer on the gate structure, performing an etching process to form two recesses corresponding to the gate structure within the substrate, performing a selective epitaxial growth (SEG) process to form an epitaxial layer in the recesses respectively, and performing an ion implantation process for the epitaxial layers to form a source/drain region.

Abstract translation: 本发明提供一种制造应变硅沟道MOS晶体管的方法，包括提供衬底，在衬底上形成至少栅极结构，在栅极结构上形成掩模层，执行蚀刻工艺以形成对应于栅极的两个凹槽 结构，进行选择性外延生长（SEG）工艺，分别在凹槽中形成外延层，并对外延层进行离子注入工艺以形成源/漏区。

公开(公告)号：US07385294B2

公开(公告)日：2008-06-10

申请号：US11162360

申请日：2005-09-08

Applicant: Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

Inventor： Yi-Wei Chen ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Tzung-Yu Hung ,  Yu-Lan Chang ,  Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen

IPC: H01L23/48

CPC classification number: H01L29/665 ,  H01L21/324 ,  H01L29/4933

Abstract: A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.

Abstract translation: 具有硅化镍的半导体器件和制造硅化镍的方法。 提供具有多个掺杂区域的半导体衬底。 接着，在半导体基板上形成镍层，进行第一快速热处理（RTP），使镍层与配置在其上的掺杂区域反应。 此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。 第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

公开(公告)号：US20080132063A1

公开(公告)日：2008-06-05

申请号：US12017066

申请日：2008-01-21

Applicant: Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

Inventor： Yu-Lan Chang ,  Chao-Ching Hsieh ,  Yi-Yiing Chiang ,  Yi-Wei Chen ,  Tzung-Yu Hung

IPC: H01L21/44

CPC classification number: H01L29/665 ,  H01L29/6659 ,  H01L29/7833

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap layer is formed on the refractory metal alloy layer. A thermal process is performed so that the refractory metal alloy layer reacts with silicon of the silicon-containing conductive layer to form a refractory metal alloy salicide layer. Afterwards, an etch process with an etch solution is performed to removes the cap layer and the refractory metal alloy layer which has not been reacted and to form a protection layer on the refractory metal alloy salicide layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在含硅导电层上形成难熔金属合金层。 难熔金属合金层由第一耐火金属和第二难熔金属构成。 此后，在难熔金属合金层上形成盖层。 进行热处理，使得难熔金属合金层与含硅导电层的硅反应形成难熔金属合金硅化物层。 之后，进行具有蚀刻溶液的蚀刻工艺以除去未被反应的盖层和难熔金属合金层，并在难熔金属合金自对准硅化物层上形成保护层。