公开(公告)号：US09960278B2

公开(公告)日：2018-05-01

申请号：US13437271

申请日：2012-04-02

申请人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

发明人： Yuhei Sato ,  Keiji Sato ,  Toshinari Sasaki ,  Tetsunori Maruyama ,  Atsuo Isobe ,  Tsutomu Murakawa ,  Sachiaki Tezuka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L21/477

CPC分类号： H01L29/7869 ,  H01L21/477

摘要： To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.

公开(公告)号：US09178069B2

公开(公告)日：2015-11-03

申请号：US12533401

申请日：2009-07-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/268 ,  H01L29/786 ,  H01L21/3213 ,  H01L21/02 ,  B23K26/073 ,  H01L21/20 ,  H01L21/84 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US08766255B2

公开(公告)日：2014-07-01

申请号：US13418558

申请日：2012-03-13

申请人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

发明人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

IPC分类号： H01L29/786

CPC分类号： H01L27/1156 ,  H01L21/76232 ,  H01L27/1225 ,  H01L29/4236

摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.

摘要翻译： 一种其中可以实现保持存储数据的性质的改进的半导体器件。 此外，半导体器件的功耗降低。 使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构 栅电极和用于元件隔离的沟槽。 使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。 此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。

公开(公告)号：US08581309B2

公开(公告)日：2013-11-12

申请号：US13277489

申请日：2011-10-20

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hiromichi Godo ,  Yutaka Okazaki

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hiromichi Godo ,  Yutaka Okazaki

IPC分类号： H01L27/092

CPC分类号： H01L27/1266 ,  H01L21/823807 ,  H01L21/823871 ,  H01L23/433 ,  H01L23/481 ,  H01L23/552 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/7843 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/16152 ,  H01L2924/16195

摘要： An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

摘要翻译： 目的是在具有SOI结构的半导体器件中实现高性能和低功耗。 此外，另一个目的是提供一种具有更高集成度的高性能半导体元件的半导体器件。 半导体器件使得多个n沟道场效应晶体管和p沟道场效应晶体管层叠在其间具有绝缘表面的衬底之间的层间绝缘层。 通过控制由于具有应力的绝缘膜，半导体层的平面取向和沟道长度方向的晶轴引起的半导体层的失真，n沟道场效应晶体管和 可以减小p沟道场效应晶体管，由此n沟道场效应晶体管的电流驱动能力和响应速度与p沟道场效应相当。

公开(公告)号：US08546210B2

公开(公告)日：2013-10-01

申请号：US12794120

申请日：2010-06-04

申请人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

发明人： Yoshiaki Yamamoto ,  Koichiro Tanaka ,  Atsuo Isobe ,  Daisuke Ohgarane ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L21/6835 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/84 ,  H01L23/544 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L27/12 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/6677 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01Q1/38 ,  H01Q9/285 ,  H01Q23/00 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

摘要翻译： 本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜 晶体管，以及电路或半导体器件到具有柔性的衬底。 根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的 薄膜晶体管转置到具有导电膜等的基板上。 根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

公开(公告)号：US08470688B2

公开(公告)日：2013-06-25

申请号：US13251641

申请日：2011-10-03

申请人： Atsuo Isobe

发明人： Atsuo Isobe

IPC分类号： H01L27/12 ,  H01L21/30

CPC分类号： H01L27/088 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L29/78603

摘要： A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.

公开(公告)号：US08426231B2

公开(公告)日：2013-04-23

申请号：US12857820

申请日：2010-08-17

申请人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

发明人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

摘要翻译： 所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。 所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。 提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。 光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

公开(公告)号：US20130075733A1

公开(公告)日：2013-03-28

申请号：US13609931

申请日：2012-09-11

申请人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Sho NAGAMATSU

发明人： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Sho NAGAMATSU

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/463 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/14632 ,  H01L27/14687 ,  H01L29/04 ,  H01L29/78 ,  H01L29/7869

摘要： A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating layer covering a semiconductor layer. The opening of the source electrode layer and the opening of the drain electrode layer are formed separately in two distinct steps. The source electrode layer and the drain electrode layer are formed by depositing a conductive layer over the insulating layer and in the openings, and subsequently removing the part located over the insulating layer by polishing. This manufacturing method allows for the source electrode later and the drain electrode layer to be formed close to each other and close to a channel forming region of the semiconductor layer. Such a structure leads to a transistor having high electrical characteristics and a high manufacturing yield even in the case of a minute structure.

摘要翻译： 一分钟晶体管和微晶体管的制造方法。 源极电极层和漏极电极层各自形成在形成在覆盖半导体层的绝缘层中的对应的开口中。 源电极层的开口和漏电极层的开口分开形成两个不同的步骤。 源极电极层和漏电极层通过在绝缘层上和开口中沉积导电层而形成，然后通过抛光去除绝缘层上方的部分。 该制造方法允许稍后的源极电极和漏极电极层彼此靠近并且靠近半导体层的沟道形成区域。 这种结构导致即使在微小结构的情况下也具有高电特性和高制造成品率的晶体管。

公开(公告)号：US20120267624A1

公开(公告)日：2012-10-25

申请号：US13446028

申请日：2012-04-13

申请人： Atsuo ISOBE ,  Toshinari SASAKI ,  Shinya SASAGAWA ,  Akihiro ISHIZUKA

发明人： Atsuo ISOBE ,  Toshinari SASAKI ,  Shinya SASAGAWA ,  Akihiro ISHIZUKA

IPC分类号： H01L29/24 ,  H01L21/34

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L27/0688 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/78696

摘要： An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface.

摘要翻译： 绝缘层设置有突出的结构体，并且设置与突出结构体接触的氧化物半导体层的沟道形成区域，由此沟道形成区域沿三维方向（垂直于衬底的方向）延伸 ）。 因此，可以使晶体管小型化并且延长晶体管的有效沟道长度。 此外，突出结构体的顶表面和侧表面彼此相交的突出结构体的上端角部弯曲，并且氧化物半导体层形成为包括具有c轴的晶体 垂直于曲面。

公开(公告)号：US20120235150A1

公开(公告)日：2012-09-20

申请号：US13418558

申请日：2012-03-13

申请人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

发明人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/04

CPC分类号： H01L27/1156 ,  H01L21/76232 ,  H01L27/1225 ,  H01L29/4236

摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.

摘要翻译： 一种其中可以实现保持存储数据的性质的改进的半导体器件。 此外，半导体器件的功耗降低。 使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构 栅电极和用于元件隔离的沟槽。 使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。 此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。