公开(公告)号：US08633051B2

公开(公告)日：2014-01-21

申请号：US12859446

申请日：2010-08-19

申请人： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Munehiro Kozuma ,  Hikaru Tamura ,  Kazuko Yamawaki ,  Takashi Hamada ,  Shunpei Yamazaki

发明人： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Munehiro Kozuma ,  Hikaru Tamura ,  Kazuko Yamawaki ,  Takashi Hamada ,  Shunpei Yamazaki

IPC分类号： H01L31/0232 ,  H01L21/71

CPC分类号： G09F9/33 ,  H01L31/0203 ,  H01L31/02325

摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.

摘要翻译： 目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。 通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底 转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。

公开(公告)号：US08426231B2

公开(公告)日：2013-04-23

申请号：US12857820

申请日：2010-08-17

申请人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

发明人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

摘要翻译： 所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。 所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。 提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。 光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

公开(公告)号：US20110049588A1

公开(公告)日：2011-03-03

申请号：US12857820

申请日：2010-08-17

申请人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

发明人： Atsuo Isobe ,  Noriko Harima ,  Noriko Matsumoto ,  Akihisa Shimomura ,  Kosei Noda ,  Kazuko Yamawaki ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takashi Hamada

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14643 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

摘要翻译： 所公开的发明的一个实施例的目的是提供一种包括具有优异特性的光电转换元件的半导体器件。 所公开的发明的一个实施例的目的是提供一种包括通过简单工艺具有优异特性的光电转换装置的半导体器件。 提供了一种半导体器件，其包括透光衬底; 透光基板上的绝缘层; 和绝缘层上的光电转换元件。 光电转换元件包括具有具有光电转换效果的半导体区域，具有第一导电类型的半导体区域和具有第二导电类型的半导体区域的单晶半导体层; 电连接到具有第一导电类型的半导体区域的第一电极; 以及电连接到具有第二导电类型的半导体区域的第二电极。

公开(公告)号：US20110042768A1

公开(公告)日：2011-02-24

申请号：US12859446

申请日：2010-08-19

申请人： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Munehiro Kozuma ,  Hikaru Tamura ,  Kazuko Yamawaki ,  Takashi Hamada ,  Shunpei Yamazaki

发明人： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Munehiro Kozuma ,  Hikaru Tamura ,  Kazuko Yamawaki ,  Takashi Hamada ,  Shunpei Yamazaki

IPC分类号： H01L31/0232 ,  H01L21/71

CPC分类号： G09F9/33 ,  H01L31/0203 ,  H01L31/02325

摘要： An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching.

摘要翻译： 目的是防止当反射光进入布置在布置在预定地址处的光电转换元件的周围的光电转换元件时引起的定义（或分辨率）（外围模糊）的降低。 通过以下步骤制造半导体器件：在第一透光衬底上形成具有第一透光衬底，多个光电转换元件的结构，设置成面对多个光电转换元件的第二透光衬底 转换元件，密封剂，其被布置成结合第一透光性基板和第二透光性基板，并且包围多个光电转换元件; 并通过湿蚀刻使第一透光衬底变薄。