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    Electron beam inspection system and method
    1.
    发明授权
    Electron beam inspection system and method 失效
    电子束检查系统及方法

    公开(公告)号：US5578821A

    公开(公告)日：1996-11-26

    申请号：US371458

    申请日：1995-01-11

    Applicant: Dan Meisberger ,  Alan D. Brodie ,  Anil A. Desai ,  Dennis G. Emge ,  Zhong-Wei Chen ,  Richard Simmons ,  Dave E. A. Smith ,  April Dutta ,  J. Kirkwood H. Rough ,  Leslie A. Honfi ,  Henry Pearce-Percy ,  John McMurtry ,  Eric Munro

    Inventor： Dan Meisberger ,  Alan D. Brodie ,  Anil A. Desai ,  Dennis G. Emge ,  Zhong-Wei Chen ,  Richard Simmons ,  Dave E. A. Smith ,  April Dutta ,  J. Kirkwood H. Rough ,  Leslie A. Honfi ,  Henry Pearce-Percy ,  John McMurtry ,  Eric Munro

    IPC: G01B15/00 ,  G01B15/08 ,  G01N23/04 ,  G01N23/203 ,  G01N23/225 ,  G01R31/28 ,  G01R31/302 ,  G03F1/08 ,  G03F1/16 ,  H01J37/28 ,  H01J37/30 ,  H01L21/027 ,  H01L21/66 ,  H01J37/00

    CPC classification number: H01J37/28 ,  H01J37/3005 ,  H01J2237/2817

    Abstract: A method and apparatus for a charged particle scanning system and an automatic inspection system, including wafers and masks used in microcircuit fabrication. A charged particle beam is directed at the surface of a substrate for scanning that substrate and a selection of detectors are included to detect at least one of the secondary charged particles, back-scattered charged particles and transmitted charged particles from the substrate. The substrate is mounted on an x-y stage to provide at least one degree of freedom while the substrate is being scanned by the charged particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary charged particles. The system facilitates inspection at low beam energies on charge sensitive insulating substrates and has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment system for initially aligning the substrate beneath the charged particle beam. To function most efficiently there is also a vacuum system for evacuating and repressurizing a chamber containing the substrate. The vacuum system can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum system can simultaneously evacuate a plurality of substrates prior to inspection and repressurize the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison system for comparing the pattern on the substrate with a second pattern.

    Abstract translation: 一种带电粒子扫描系统和自动检查系统的方法和装置，包括微电路制造中使用的晶片和掩模。 带电粒子束被引导到用于扫描该衬底的衬底的表面，并且包括选择的检测器以检测来自衬底的次级带电粒子，反向散射带电粒子和透射带电粒子中的至少一个。 衬底被安装在x-y平台上以在通过带电粒子束扫描衬底的同时提供至少一个自由度。 衬底也在其表面上经受电场以加速次级带电粒子。 该系统便于对电荷敏感绝缘基板上的近光束能量进行检查，并且能够准确地测量基板相对于带电粒子束的位置。 另外，存在用于使带电粒子束下面的衬底最初对准的光学对准系统。 为了最有效地起作用，还有一个真空系统用于对含有基底的腔室进行抽空和再加压。 真空系统可用于将一个基板保持在真空状态，而第二个基板正在装载/卸载，抽真空或重新加压。 或者，真空系统可以在检查之前同时抽空多个基板，并且在检查之后重新加压相同的​​多个基板。 在检查配置中，还存在用于将衬底上的图案与第二图案进行比较的比较系统。

    Fast image simulation for photolithography
    2.
    发明授权
    Fast image simulation for photolithography 有权
    用于光刻的快速图像模拟

    公开(公告)号：US06765651B1

    公开(公告)日：2004-07-20

    申请号：US10385774

    申请日：2003-03-11

    Applicant: Peter J. Fiekowsky ,  Paul R. Kube ,  April Dutta

    Inventor： Peter J. Fiekowsky ,  Paul R. Kube ,  April Dutta

    IPC: G03B2732

    CPC classification number: G03F7/705 ,  G06T5/30 ,  G06T7/0002 ,  G06T7/001 ,  G06T11/00 ,  G06T2207/30148

    Abstract: A fast method simulates photolithography using conventional image processing techniques. Convolution simulates for blurring; erosion and dilation correct for edge diffraction. In one technique, the source image of the photomask is deconvolved to sharpen it and then dilated to remove edge diffraction. The image is eroded, and then convolved according to the resolution of the stepper at the photomask plane. This aerial image can be further eroded to match the effects of resist and developing. Optional thresholding is done to produce a simulated processed wafer image. In a fast technique, the deconvolution step is eliminated. Dilation and erosion are combined into a single erosion. Where a phase shift mask is involved, a complex convolution is used. Source data can come from the photomask electronic design or from a visual image of the actual photomask. Optimizations include: special microprocessor instructions, floating point pixel values, separable convolution and annular illumination simulation.

    Abstract translation: 一种快速的方法使用传统的图像处理技术来模拟光刻。 卷积模拟模糊; 侵蚀和扩张正确的边缘衍射。 在一种技术中，光掩模的源图像被去卷积以锐化，然后扩大以除去边缘衍射。 图像被侵蚀，然后根据步进器在光掩模平面上的分辨率进行卷积。 这种航空图像可以进一步侵蚀以匹配抗蚀剂和显影剂的效果。 进行可选的阈值处理以产生模拟的处理晶片图像。 在快速的技术中，去卷积步骤被消除。 扩散和侵蚀被组合成单一的侵蚀。 在涉及相移掩模的情况下，使用复数卷积。 源数据可以来自光掩模电子设计或来自实际光掩模的视觉图像。 优化包括：特殊微处理器指令，浮点像素值，可分离卷积和环形照明模拟。

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