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    Apparatus for substrate processing with improved throughput and yield
    2.
    发明授权
    Apparatus for substrate processing with improved throughput and yield 有权
    用于基板处理的装置，具有改善的生产量和产量

    公开(公告)号：US6129044A

    公开(公告)日：2000-10-10

    申请号：US409477

    申请日：1999-10-06

    申请人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    发明人： Jun Zhao ,  Ashok Sinha ,  Avi Tepman ,  Mei Chang ,  Lee Luo ,  Alex Schreiber ,  Talex Sajoto ,  Stefan Wolff ,  Charles Dornfest ,  Michal Danek

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32 ,  C23C16/00 ,  G06F19/00

    CPC分类号： C23C16/4411 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/2001

    摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

    摘要翻译： 本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。 根据实施例，本发明提供了一种用于基板处理的装置。 该装置使热交换介质通过真空室的室主体中的通道循环，并将具有用于支撑基板的表面的加热器基座加热到加热器温度。 热交换介质的热交换温度为约60℃以下。 该设备还以流速将气体流入室中，以将膜沉积在基底上，其中流速提供了低于加热器温度的基底的有效温度，并且其中膜在沉积之后满足均匀性和电阻规格 一些基板。 在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。 因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

    Faceplate thermal choke in a CVD plasma reactor
    3.
    发明授权
    Faceplate thermal choke in a CVD plasma reactor 失效
    CVD等离子体反应器中的面板热扼流圈

    公开(公告)号：US5882411A

    公开(公告)日：1999-03-16

    申请号：US735386

    申请日：1996-10-21

    申请人： Jun Zhao ,  Alex Schreiber

    发明人： Jun Zhao ,  Alex Schreiber

    IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/455 ,  C23C16/45565 ,  H01J37/3244

    摘要： A reactor for plasma-enhanced chemical vapor deposition having a showerhead electrode facing the wafer being CVD deposited, the showerhead having a large number of jetting holes for jetting processing gas towards the wafer. Two deep grooves are formed around the area of the showerhead containing the jetting holes. The grooves are formed from opposite sides of the showerhead and are radially offset from each other, thereby forming a thin wall between the grooves in the body of the showerhead. The thin wall acts as a thermal choke, thus reducing the heat flow to the support of the showerhead and also rendering the temperature distribution more uniform across the face of the showerhead. The thin wall further acts as a mechanical bellows to accommodate differential thermal expansion between the showerhead and its support.

    摘要翻译： 一种用于等离子体增强化学气相沉积的反应器，其具有面向晶片的喷头电极被CVD沉积，所述喷头具有用于向晶片喷射处理气体的大量喷射孔。 在包含喷射孔的喷头的区域周围形成两个深槽。 凹槽由喷头的相对侧形成并且彼此径向偏移，从而在喷头体内的凹槽之间形成薄壁。 薄壁用作热扼流圈，从而减少到喷头支撑件的热流，并且使得温度分布在喷头的表面上更均匀。 薄壁还充当机械波纹管，以适应淋浴喷头及其支撑之间的不同热膨胀。

    Method of reducing residue accumulation in CVD chamber using ceramic lining
    6.
    发明授权
    Method of reducing residue accumulation in CVD chamber using ceramic lining 失效
    使用陶瓷衬里减少CVD室中残留物累积的方法

    公开(公告)号：US5885356A

    公开(公告)日：1999-03-23

    申请号：US577862

    申请日：1995-12-22

    申请人： Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

    发明人： Jun Zhao ,  Tom Cho ,  Xin Sheng Guo ,  Atsushi Tabata ,  Jianmin Qiao ,  Alex Schreiber

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00 ,  B44C1/22

    CPC分类号： H01J37/32834 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/4586 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S156/916

    摘要： The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.

    摘要翻译： 本发明提供了一种用于通过用陶瓷材料衬里处理室的排气增压和排气歧管来限制残余物堆积的方法和装置。 在本发明的另一方面，本发明人已经在陶瓷衬垫和处理室壁之间使用气隙来增加陶瓷衬里的介电值，并进一步抑制残留物的积聚。 在另一方面，已经发现陶瓷衬垫保持足够的热量，以便在清洁操作期间消除通常用于加热铝壁的加热器，如果在工艺步骤之后立即开始清洁操作，使得陶瓷保留必要的 来自前一处理步骤的热量。 提供气隙有助于这种加热，从而防止陶瓷热量与铝壁直接接触而被吸走。 在一个优选实施例中，陶瓷衬垫用TEFLON TM（聚四氟乙烯）螺钉连接到室壁。

    CVD processing chamber
    7.
    发明授权
    CVD processing chamber 失效
    CVD处理室

    公开(公告)号：US5853607A

    公开(公告)日：1998-12-29

    申请号：US540812

    申请日：1995-10-11

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin Sheng Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  A62C1/00 ,  A62D1/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。

    CVD Processing chamber
    8.
    发明授权
    CVD Processing chamber 失效
    CVD加工室

    公开(公告)号：US5558717A

    公开(公告)日：1996-09-24

    申请号：US348273

    申请日：1994-11-30

    申请人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    发明人： Jun Zhao ,  Tom Cho ,  Charles Dornfest ,  Stefan Wolff ,  Kevin Fairbairn ,  Xin S Guo ,  Alex Schreiber ,  John M. White

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/02 ,  H01J37/32 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

    CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C30B25/02 ,  H01J37/32477 ,  H01J37/32724 ,  H01J37/32834 ,  H01L21/68742 ,  H01L21/68785 ,  H01J2237/022 ,  Y10S438/909

    摘要： A process chamber is disclosed which provides a 360.degree. circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled pedestal assembly. The substrate faces a one-piece gas distribution faceplate being connected to an RF power supply outside the vacuum environment of the processing chamber. A pumping channel view port is provided to verify and confirm instrumentation readings concerning the degree of surface deposition on process chamber internal surfaces. All process chamber wall surfaces facing the region where plasma will be present during processing (except the gas distribution faceplate) are ceramic and therefore highly resistant to corrosion. The pedestal an un-anodized metal is also covered with a loosely fitting ceramic surface having alignment features to maintain concentricity between the wafer support surface of the pedestal and the wafer being processed. A valve body is contained within the wall of the processing chamber helping to reduce the surface area available for condensation of volatile process gas constituents which condense or cool in vacuum passage surfaces and can contaminate the process chamber if allowed to migrate back to it through the vacuum piping.

    摘要翻译： 公开了一种处理室，其在正在处理的衬底上提供360°圆形气体/真空分布。 正在加工的基板被支撑在加热且任选地冷却的基座组件上。 衬底面向一体式气体分布面板，其连接到处理室真空环境外的RF电源。 提供泵浦通道视图端口以验证和确认关于处理室内表面上的表面沉积程度的仪表读数。 在处理过程中等离子体将存在的区域（除气体分布面板之外）的所有处理室壁表面均为陶瓷，因此具有很高的抗腐蚀性。 基座是非阳极氧化的金属也被具有对准特征的松散配合的陶瓷表面覆盖，以保持基座的晶片支撑表面和正被处理的晶片之间的同心度。 阀体包含在处理室的壁内，有助于减少可用于在真空通道表面中冷凝或冷却的挥发性工艺气体组分的冷凝的表面积，并且如果允许通过真空迁移回到处理室，则可污染处理室 管道。