发明授权
- 专利标题： RF and milimeter-wave high-power semiconductor device
- 专利标题（中）： 射频和毫米波大功率半导体器件
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申请号： US12855274申请日： 2010-08-12
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公开(公告)号： US08796843B1公开(公告)日： 2014-08-05
- 发明人: Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
- 申请人： Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
- 申请人地址： US CA Santa Clara
- 专利权人： Element Six Technologies US Corporation
- 当前专利权人： Element Six Technologies US Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Bryan Cave LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/34
摘要：
High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
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