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    Heater for use in substrate processing apparatus to deposit tungsten
    1.
    发明授权
    Heater for use in substrate processing apparatus to deposit tungsten 失效
    用于衬底处理装置的加热器以沉积钨

    公开(公告)号：US06179924B2

    公开(公告)日：2001-01-30

    申请号：US09067618

    申请日：1998-04-28

    Applicant: Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin

    Inventor： Jun Zhao ,  Talex Sajoto ,  Leonid Selyutin

    IPC: C23C1646

    CPC classification number: C23C16/45521 ,  C23C16/14 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  H01L21/67109

    Abstract: The present invention provides a simplified heater design that is scaleable for equipment processing different diameter substrates and that can efficiently and economically process substrates to meet stringent film requirements such as film uniformity for fabricating high integration devices. The present invention is particularly useful for economically and efficiently producing integrated devices using increasingly larger diameter substrates, such as 12-inch (or 300-mm) diameter and even larger substrates. According to one embodiment, the present invention provides a heater assembly for use in a substrate processing apparatus. The heater assembly includes a metal pedestal including a surface for supporting a substrate, and a resistive heating element disposed in the metal pedestal. The heater assembly also includes a purge gas channel system disposed in the metal pedestal. The purge gas channel system includes a central purge gas inlet located substantially at a center of the metal pedestal. The central purge gas inlet is for providing a purge gas. The purge gas channel system also includes multiple radial purge gas channels radiating from the central purge gas inlet out toward a perimeter of the metal pedestal, and an annular purge gas channel formed in the metal pedestal at the perimeter. The purge gas channels form a substantially symmetric pattern, and each of the purge gas channels are substantially the same length. In a specific embodiment, the assembly includes an annular purge gas channel coupled to the surface via multiple holes near the perimeter to provide a purge guide ring integral to the metal pedestal. Other embodiments of the present invention are also provided.

    Abstract translation: 本发明提供了一种简化的加热器设计，其可用于设备处理不同直径的基底并且可以有效地和经济地处理基底以满足严格的膜要求，例如用于制造高集成器件的膜均匀性。 本发明对于经济地和有效地生产使用越来越大直径的基底（例如12英寸（或300mm）直径和甚至更大的基底）的集成装置特别有用。 根据一个实施例，本发明提供一种用于基板处理装置的加热器组件。 加热器组件包括金属基座，其包括用于支撑基板的表面和设置在金属基座中的电阻加热元件。 加热器组件还包括设置在金属基座中的吹扫气体通道系统。 吹扫气体通道系统包括基本上位于金属基座的中心处的中央吹扫气体入口。 中央吹扫气体入口用于提供净化气体。 吹扫气体通道系统还包括从中央吹扫气体入口向金属基座的周边辐射的多个径向吹扫气体通道，以及形成在金属基座周边的环形吹扫气体通道。 吹扫气体通道形成基本上对称的图案，并且每个吹扫气体通道基本上是相同的长度。 在具体实施例中，组件包括通过靠近周边的多个孔耦合到表面的环形吹扫气体通道，以提供与金属基座一体的清洗引导环。 还提供了本发明的其它实施例。

    Cold trap
    3.
    发明授权
    Cold trap 失效
    冷阱

    公开(公告)号：US6066209A

    公开(公告)日：2000-05-23

    申请号：US52743

    申请日：1998-03-31

    Applicant: Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    Inventor： Talex Sajoto ,  Jun Zhao ,  Vincent Ku ,  Charles Dornfest

    IPC: C23C16/52 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/00 ,  H01L21/31 ,  C23C16/00

    CPC classification number: C23C16/4409 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/45561 ,  C23C16/4557 ,  H01L21/67017 ,  H01L21/6715 ,  Y10S261/65

    Abstract: The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.

    Abstract translation: 本发明涉及一种用于在基板处理系统中过滤沉积气体的装置和方法。 特别考虑的是用于过滤沉积在硅晶片上的金属氧化物膜的沉积气体以制造集成电路的装置和方法。 在一个实施例中，本发明提供了一种用于对半导体处理系统中的流体进行过滤的装置，包括壳体和一次性在壳体中的过滤构件，过滤构件包括基部和具有入口和出口的过滤部分， 多个温度控制的流体通道形成在入口和出口之间，通道的长度大于通道两端的宽度。

    Universal mid-frquency matching network
    5.
    发明申请
    Universal mid-frquency matching network 失效
    通用中频匹配网络

    公开(公告)号：US20050235916A1

    公开(公告)日：2005-10-27

    申请号：US10829520

    申请日：2004-04-21

    Applicant: Eller Juco ,  Visweswaren Sivaramakrishnan ,  Mario Silvetti ,  Talex Sajoto

    Inventor： Eller Juco ,  Visweswaren Sivaramakrishnan ,  Mario Silvetti ,  Talex Sajoto

    IPC: C23C16/00 ,  C23C16/509 ,  H01J37/32

    CPC classification number: H01J37/32082 ,  C23C16/5096 ,  H01J37/32183

    Abstract: A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

    Abstract translation: 衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。 处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。 阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

    High temperature, high deposition rate process and apparatus for depositing titanium layers
    9.
    发明授权
    High temperature, high deposition rate process and apparatus for depositing titanium layers 失效
    高温，高沉积速率工艺和用于沉积钛层的设备

    公开(公告)号：US6051286A

    公开(公告)日：2000-04-18

    申请号：US918706

    申请日：1997-08-22

    Applicant: Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Stefan Wolff ,  Talex Sajoto

    Inventor： Jun Zhao ,  Lee Luo ,  Xiao Liang Jin ,  Jia-Xiang Wang ,  Stefan Wolff ,  Talex Sajoto

    IPC: C23C16/44 ,  C23C16/52 ,  C23C16/08

    CPC classification number: H01J37/3244 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/52 ,  H01J2237/3321

    Abstract: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

    Abstract translation: 本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。 根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。 热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。 沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和 调味料。 沉积和清洁过程也是本发明的进一步的实施方案。

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