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    Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof
    88.
    发明授权
    Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof 失效
    使用激光腔能量放大信号的半导体光放大器及其制造方法

    公开(公告)号：US06836357B2

    公开(公告)日：2004-12-28

    申请号：US10006435

    申请日：2001-12-04

    Applicant: Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

    Inventor： Shih-Yuan Wang ,  Miao Zhu ,  Zuhua Zhu ,  Haiqing Wei ,  Saif M. Islam

    IPC: H01S300

    CPC classification number: B82Y20/00 ,  H01S5/3413 ,  H01S5/50 ,  H01S5/5027 ,  H01S5/5063 ,  H01S5/5072 ,  H01S2301/02

    Abstract: A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.

    Abstract translation: 描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益 介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。 当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。 与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线 空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

    Method of disordering quantum well heterostructures
    89.
    发明申请
    Method of disordering quantum well heterostructures 失效
    无序量子阱异质结构的方法

    公开(公告)号：US20040038503A1

    公开(公告)日：2004-02-26

    申请号：US10381814

    申请日：2003-09-08

    Inventor： Lan Fu ,  Hark Toe Tan ,  Chennupati Jagadish

    IPC: H01L021/265 ,  H01L021/26 ,  H01L021/04 ,  H01L021/425 ,  H01L021/42

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/182 ,  H01L31/035236 ,  H01S5/3413

    Abstract: A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.

    Abstract translation: 一种使量子阱异质结构失调的方法，包括用粒子束照射异质结构的步骤，其中光束的能量使得光束产生在异质结构内的基本恒定的缺陷分布。 照射颗粒可以是离子或电子，并且能量优选使得照射颗粒通过异质结构。 轻离子如氢离子是优选的，因为它们易于获得并且在相对低的能量下产生基本上均匀的点缺陷分布。 该方法可用于调整包括诸如光电检测器的这种异质结构的光电子器件的波长范围。

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