知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.016 seconds)

    Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures
    1.
    发明授权
    Multilayer microstructures and laser based method for precision and reduced damage patterning of such structures 有权
    多层微结构和基于激光的方法用于这种结构的精确和减少的损伤图案化

    公开(公告)号：US06719916B2

    公开(公告)日：2004-04-13

    申请号：US10122236

    申请日：2002-04-16

    Applicant: Jan J. Dubowski ,  Ye Tao ,  Christophe Py

    Inventor： Jan J. Dubowski ,  Ye Tao ,  Christophe Py

    IPC: B44C122

    CPC classification number: H01L21/268 ,  H01L51/0017 ,  H01L51/0059 ,  H01L51/0081 ,  H01L51/5221 ,  H01L51/56

    Abstract: Many integrated circuits require a multilayer structure which contains layer of an organic or polymeric material with a patterned metallic layer on it. Laser patterning has many favorable characteristics but it also damages the organic or polymeric material. A novel method is disclosed that makes possible laser patterning of conductive metal electrode deposited on top of an organic and/or polymeric material without significant ablation of the organic and/or polymeric material. The method can achieve higher patterning resolution, resulting in higher quality integrated circuits. The method is based on the application of a thin coating of an inexpensive anti-reflector deposited on top of the desired metal electrode which in turn lies on the organic and/or polymeric material. The thin anti-reflecting coating allows the use of a lower fluence laser for ablation of metal layer without damaging the underlying organic and/or polymeric material.

    Abstract translation: 许多集成电路需要一层多层结构，其中包含一层有机或聚合物材料，其上具有图案化的金属层。 激光图案具有许多有利的特性，但也损害有机或聚合材料。 公开了一种新颖的方法，其使得可能激光图案化沉积在有机和/或聚合物材料的顶部上的导电金属电极，而无需有机和/或聚合物材料的显着消融。 该方法可以实现更高的图案分辨率，从而产生更高质量的集成电路。 该方法基于沉积在期望的金属电极的顶部上的廉价防反射体的薄涂层的应用，其又位于有机和/或聚合物材料上。 薄的抗反射涂层允许使用较低的注量激光器来消融金属层，而不会损坏下面的有机和/或聚合物材料。

    Photo-electrochemical biosensor and semiconductor heterostructure-based sensing method
    3.
    发明授权
    Photo-electrochemical biosensor and semiconductor heterostructure-based sensing method 有权

    公开(公告)号：US10001480B2

    公开(公告)日：2018-06-19

    申请号：US15114660

    申请日：2015-02-02

    Applicant: Jan J. Dubowski

    Inventor： Jan J. Dubowski ,  Elnaz Nazemi ,  Srivatsa Aithal ,  Xiaohuan Huang

    IPC: G01N33/569 ,  G01N27/327 ,  G01N33/543 ,  G01N33/487

    CPC classification number: G01N33/56911 ,  G01N27/3275 ,  G01N33/48707 ,  G01N33/5438 ,  G01N33/56983

    Abstract: A photo-electrochemical bio-sensor uses a semiconductor heterostructure located in an etching solution. An outer layer of the heterostructure is functionalized, such as with a self-assembled monolayer, to provide adherence of a charged molecule of interest. When contacted by a test solution, the functionalization immobilizes a quantity of the molecule that corresponds to its concentration in the test solution. The heterostructure undergoes photocorrosion when illuminated by a laser at a rate corresponding to the quantity of immobilized charged molecules. The rate of photocorrosion is monitored to determine the concentration of the molecule in the test solution. The monitoring may make use of a photoluminescent material in the heterostructure that emits photoluminescence in response to the laser illumination. The photoluminescence changes with the advancement of the photocorrosion, and the change is therefore indicative of the concentration of the molecule in the test solution.

    Laser-induced bandgap shifting for photonic device integration
    4.
    发明授权
    Laser-induced bandgap shifting for photonic device integration 失效
    用于光子器件集成的激光诱导带隙移位

    公开(公告)号：US06514784B1

    公开(公告)日：2003-02-04

    申请号：US09654614

    申请日：2000-09-01

    Applicant: Jan J. Dubowski

    Inventor： Jan J. Dubowski

    IPC: H01L2100

    CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/2068 ,  H01S5/3413

    Abstract: To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.

    Abstract translation: 为了移动量子阱微结构的带隙，微结构的表面被选择性地以紫外辐射的图案照射，以引起所述微结构的近表面区域的改变。 随后将微结构退火以引起量子阱混合，从而导致取决于所述紫外辐射的带隙位移。

    Self-Referencing Integrated Biosensor Based on Surface Plasmon Resonance Mediated Luminescence
    5.
    发明申请
    Self-Referencing Integrated Biosensor Based on Surface Plasmon Resonance Mediated Luminescence 审中-公开
    基于表面等离子体共振介质发光的自参考集成生物传感器

    公开(公告)号：US20100140482A1

    公开(公告)日：2010-06-10

    申请号：US12015725

    申请日：2008-01-17

    Applicant: Jan J. Dubowski ,  Dominic Lepage

    Inventor： Jan J. Dubowski ,  Dominic Lepage

    IPC: G01N21/55 ,  G01T1/20

    CPC classification number: G01N21/553

    Abstract: A sensing device for characterizing a substance by modifying modes of resonance of surface plasmons is described. The sensing device comprises: a photo-emitting substrate layer for generating a luminescence signal; a dielectric adaptive layer applied onto the photo-emitting substrate layer; and a sensing layer applied onto the dielectric adaptive layer, the sensing layer having a sensing surface for coupling with the substance to be characterized. The luminescence signal generates surface plasmons having modes of resonance at the interface of the sensing layer and the substance to be characterized. The substance to be characterized, when coupled to the sensing layer, characteristically modifies the modes of resonance of the surface plasmons.

    Abstract translation: 描述了通过修改表面等离子体激元的共振模式来表征物质的感测装置。 感测装置包括：用于产生发光信号的光发射基底层; 施加到光发射基底层上的介电适应层; 以及施加到介电自适应层上的感测层，感测层具有用于与要表征的物质耦合的感测表面。 发光信号产生在感测层和要表征的物质的界面处具有谐振模式的表面等离子体激元。 待特征化的物质当耦合到感测层时，特征性地修饰表面等离子体激元的共振模式。

    APPARATUS AND METHOD FOR CHARACTERIZING AN ELECTROMAGNETIC SIGNAL USING SPECTRAL ANALYSIS
    8.
    发明申请
    APPARATUS AND METHOD FOR CHARACTERIZING AN ELECTROMAGNETIC SIGNAL USING SPECTRAL ANALYSIS 审中-公开
    使用光谱分析表征电磁信号的装置和方法

    公开(公告)号：US20120327406A1

    公开(公告)日：2012-12-27

    申请号：US13575146

    申请日：2011-01-27

    Applicant: Jan J. Dubowski ,  Dominic Lepage ,  Sebastien Blais-Ouelette

    Inventor： Jan J. Dubowski ,  Dominic Lepage ,  Sebastien Blais-Ouelette

    IPC: G01J3/42 ,  G01J3/28

    CPC classification number: G01J3/18 ,  G01N21/553

    Abstract: An apparatus for characterizing energy and direction dependence of intensity for an electromagnetic signal uses spectral analysis and has particular application in the field of surface plasmon resonance. An energy dependent filter is located in an imaging space of the signal and separates the signal in an energy dependent manner. A first portion of the signal output from the filter is limited to a predetermined range of narrow energy bands and is directed to a photodetector. The photodetector receives the first signal portion and detects signal intensities across the photodetector surface, each of the signal intensities corresponding to a specific wavevector direction and energy band within the predetermined range. The filter provides said energy dependent selection for each of a plurality of different ranges of energy bands so as to create a three-dimensional dataset indicative of the energy and direction dependence of the signal intensity.

    Abstract translation: 用于表征电磁能量的能量和强度方向依赖性的装置使用光谱分析，并且在表面等离子体共振领域中具有特别的应用。 能量依赖滤波器位于信号的成像空间中，并以能量依赖的方式分离信号。 从滤波器输出的信号的第一部分被限制在窄能带的预定范围内并被引导到光电检测器。 光电检测器接收第一信号部分并检测光电检测器表面两端的信号强度，每个信号强度对应于预定范围内的特定波矢方向和能带。 滤波器为多个不同能带范围中的每一个提供所述能量相关选择，以便产生指示信号强度的能量和方向依赖性的三维数据集。

    Process for formation of cap layer for semiconductor
    9.
    发明授权
    Process for formation of cap layer for semiconductor 有权

    公开(公告)号：US06432848B1

    公开(公告)日：2002-08-13

    申请号：US09769386

    申请日：2001-01-26

    Applicant: Toshimitsu Akane ,  Koji Sugioka ,  Katsumi Midorikawa ,  Jan J. Dubowski

    Inventor： Toshimitsu Akane ,  Koji Sugioka ,  Katsumi Midorikawa ,  Jan J. Dubowski

    IPC: H01L2142

    Abstract: A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized, besides only the cap layer is selectively removed easily, comprises the steps of introducing nitrogen atom into a surface of a semiconductor; combining a component element of the semiconductor in the vicinity of the surface of the semiconductor into which the nitrogen atom has been introduced with the nitrogen atom to form a nitride compound being a compound of the component element of the semiconductor and the nitrogen atom; and utilizing the nitride compound as a cap layer for the surface of the semiconductor.

Patent Agency Ranking