公开(公告)号：US20050135730A1

公开(公告)日：2005-06-23

申请号：US11031644

申请日：2005-01-07

申请人： David Welch ,  Radhakrishnan Nagarajan ,  Fred Kish ,  Mark Missey ,  Vincent Dominic ,  Atul Mathur ,  Frank Peters ,  Charles Joyner ,  Richard Schneider ,  Ting-Kuang Chiang

发明人： David Welch ,  Radhakrishnan Nagarajan ,  Fred Kish ,  Mark Missey ,  Vincent Dominic ,  Atul Mathur ,  Frank Peters ,  Charles Joyner ,  Richard Schneider ,  Ting-Kuang Chiang

IPC分类号： G02B6/12 ,  G02B6/34 ,  G02F1/017 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H04B10/12 ,  H04B10/145 ,  H04B10/158 ,  H04B10/17 ,  H04J14/02

CPC分类号： H04B10/2914 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/12011 ,  G02B6/12019 ,  G02B6/12023 ,  G02B6/12026 ,  G02B6/12028 ,  G02B6/1203 ,  G02B6/12033 ,  G02B6/4249 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/06256 ,  H01S5/06258 ,  H01S5/0683 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/183 ,  H01S5/2077 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/3404 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50 ,  H01S5/5072 ,  H04B10/25 ,  H04B10/50 ,  H04B10/675 ,  H04J14/02

摘要： A method is disclosed for monitoring and controlling the bit error rate (BER) in an optical communication network where an optical receiver in the optical transmission network is a monolithic photonic integrated circuit (RxPIC) chip. The method includes the steps of decombining on-chip a combined channel signal received from the network and then monitoring a real time bit error rate (BER) of a decombined channel signal. The determined BER is then communicated, such as through an optical service channel (OSC) to an optical transmitter source that is the source of origin of the channel signal. Based upon the determined BER, the chirp of a channel signal modulator at the optical transmitter source that generated the monitored channel signal is adjusted by, for example, adjusting its bias. The same channel signal received at the RxPIC chip can be monitored again to determine if an acceptable level for the BER has been achieved by the previous chirp adjustment.

摘要翻译： 公开了一种用于监视和控制光通信网络中的误码率（BER）的方法，其中光传输网络中的光接收机是单片光子集成电路（RxPIC）芯片。 该方法包括以下步骤：片上从网络接收的组合信道信号，然后监视解复用信道信号的实时误码率（BER）。 所确定的BER然后例如通过光学服务信道（OSC）传送到作为信道信号的源的源的光发射机源。 基于确定的BER，通过例如调整其偏置来调整产生监视的信道信号的光发射机源处的信道信号调制器的啁啾。 可以再次监视在RxPIC芯片处接收到的相同信道信号，以确定是否通过先前的啁啾调整实现了BER的可接受电平。

公开(公告)号：US20030072342A1

公开(公告)日：2003-04-17

申请号：US10259477

申请日：2002-09-30

申请人： THE FURUKAWA ELECTRIC CO., LTD.

发明人： Junji Yoshida ,  Naoki Tsukiji

IPC分类号： H01S005/00 ,  H01S003/08

CPC分类号： B82Y20/00 ,  H01S5/06236 ,  H01S5/3404 ,  H01S5/4043 ,  H01S2301/14 ,  H01S2301/145

摘要： A compressive strain GRIN-SCH-MQW active layer and a tensile strain GRIN-SCH-MQW active layer are laminated, and there are provided a diffraction grating formed in the vicinity of the compressive strain GRIN-SCH-MQW active layer and a diffraction grating formed in the vicinity of the tensile strain GRIN-SCH-MQW active layer, between the radiation end face and the reflection end face of the laser beam. A laser beam obtained by polarization-multiplexing a laser beam in the TE mode generated in the compressive strain GRIN-SCH-MQW active layer and a laser beam in the TE mode generated in the tensile strain GRIN-SCH-MQW active layer, and having a plurality of oscillation longitudinal modes of not larger than a predetermined output value is output by the wavelength selection characteristic of the diffraction gratings.

摘要翻译： 压缩应变GRIN-SCH-MQW有源层和拉伸应变GRIN-SCH-MQW有源层被层叠，并且在压应变GRIN-SCH-MQW有源层附近形成衍射光栅，衍射光栅 形成在拉伸应变GRIN-SCH-MQW有源层附近，在辐射端面与激光束的反射端面之间。 通过在压缩应变GRIN-SCH-MQW有源层中产生的TE模式中的激光束以及在拉伸应变GRIN-SCH-MQW有源层中产生的TE模式的激光束进行偏振复用而获得的激光束，并且具有 通过衍射光栅的波长选择特性输出不大于预定输出值的多个振荡纵向模式。

公开(公告)号：US06347106B1

公开(公告)日：2002-02-12

申请号：US09257288

申请日：1999-02-25

申请人： Sol P. Dijaili ,  Frank G. Patterson ,  Jeffrey D. Walker ,  Robert J. Deri ,  Holly Petersen ,  William Goward

发明人： Sol P. Dijaili ,  Frank G. Patterson ,  Jeffrey D. Walker ,  Robert J. Deri ,  Holly Petersen ,  William Goward

IPC分类号： H01S5223

CPC分类号： H01S5/02461 ,  B82Y20/00 ,  H01S5/02484 ,  H01S5/18361 ,  H01S5/2205 ,  H01S5/222 ,  H01S5/3404 ,  H01S5/5009

摘要： A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

摘要翻译： 高导热层与有源半导体元件的光波导区域结合或放置在有源半导体元件的光波导区域附近。 导热层增强了远离有源区域的热传导，这是在有源半导体部件中产生热量的地方。 该层被放置得如此靠近光学区域，其也必须用作波导并且使有源区域与环境或散热器几乎相同的温度。 然而，半导体材料本身应当尽可能不敏感，因此本发明将高导热介电层与改进的半导体材料组合以实现提供改进的热性能的整体封装。 高导热层具有两个基本功能。 首先，它提供比半导体器件更低的折射率材料，使得可以形成某些种类的光波导，例如脊形波导。 与本发明相关的第二和最重要的功能是提供比半导体材料显着更高的热导率，半导体材料是制造各种光电器件的主要材料。

公开(公告)号：US5940569A

公开(公告)日：1999-08-17

申请号：US894854

申请日：1997-08-28

申请人： Robert Schimpe

发明人： Robert Schimpe

IPC分类号： G02F1/025 ,  G02F1/017 ,  H01S5/00 ,  H01S5/34 ,  G02B6/10

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3404

摘要： An optical fiber of the type makes it possible to guide light waves independently of their polarization at 1.55 .mu.m wavelength. The optical layer (12) and semiconductor material (11, 12) adjacent to both flat sides (121, 122) of the layer (12) have a crystal lattice constant (1) less than 1% lower than a determined crystal lattice constant (a1) of InP. In a preferred embodiment of the invention, a superlattic is provided on an InP substrate to widen the InP lattice constants.

摘要翻译： PCT No.PCT / DE96 / 00317 Sec。 371日期1997年8月28日 102（e）日期1997年8月28日PCT 1996年2月26日PCT公布。 WO96 / 27146 PCT公开号 日期1996年9月6日这种类型的光纤使得可以独立于1.55μm波长的偏振引导光波。 与层（12）的两个平坦侧面（121,122）相邻的光学层（12）和半导体材料（11,12）具有比确定的晶格常数低1％的晶格常数（1） a1）的InP。 在本发明的优选实施例中，在InP衬底上提供超晶格以扩大InP晶格常数。

公开(公告)号：US5878066A

公开(公告)日：1999-03-02

申请号：US904448

申请日：1997-07-31

申请人： Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

发明人： Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

IPC分类号： H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/50 ,  H01S3/10

CPC分类号： B82Y20/00 ,  H01S5/0625 ,  H01S5/12 ,  H01S2301/14 ,  H01S5/06203 ,  H01S5/06236 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/204 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/3404 ,  H01S5/3413 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/5009 ,  H01S5/5018

摘要： An optical semiconductor apparatus includes at least two semiconductor laser portions each having a light waveguide with an active layer and a distributed reflector, and a stimulating unit for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a modulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.

摘要翻译： 光学半导体装置包括至少两个半导体激光器部分，每个半导体激光器部分具有有源层的光波导和分布反射器，以及用于独立地激发光波导的有源层的刺激单元。 半导体激光器部分沿光传播方向串联布置。 光波导被构造成使得波导中的一个中的两个不同偏振模式的传播常数之间的差异不同于另一个波导中两种不同偏振模式的传播常数之差。 当将调制电流信号注入或向光半导体装置施加调制电压中的一个时，可以在两个不同偏振模式中的一个的布拉格波长在光之间彼此重合的状态之间切换振荡状态 波导和两个不同偏振模式中的另一个的布拉格波长在光波导之间彼此重合的状态。

公开(公告)号：US5841799A

公开(公告)日：1998-11-24

申请号：US570654

申请日：1995-12-11

申请人： Tamayo Hiroki

发明人： Tamayo Hiroki

IPC分类号： H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/34 ,  H01S3/10

CPC分类号： B82Y20/00 ,  H01S5/0625 ,  H01S5/06236 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/3404

摘要： A semiconductor laser of the present invention includes a semiconductor laser structure having a waveguide extending along a resonance direction, an active layer provided at least partly in the waveguide, and a control unit for controlling the excited state of the semiconductor laser structure to change the relationship between wavelengths or propagation constants and threshold gains for transverse electric (TE) mode and transverse magnetic (TM) mode of the laser structure. The waveguide is designed such that threshold gains for the TE mode and the TM mode can be alternately made minimum under the control of the control unit.

摘要翻译： 本发明的半导体激光器包括具有沿着谐振方向延伸的波导的半导体激光器结构，至少部分地设置在波导中的有源层，以及用于控制半导体激光器结构的激发状态以改变关系的控制单元 在激光结构的横向电（TE）模式和横向磁（TM）模式之间的波长或传播常数和阈值增益之间。 波导被设计成使得在控制单元的控制下，TE模式和TM模式的阈值增益可以交替地最小化。

公开(公告)号：US5828684A

公开(公告)日：1998-10-27

申请号：US581711

申请日：1995-12-29

申请人： Christian Gilbert Van de Walle

发明人： Christian Gilbert Van de Walle

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01S3/10

CPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/34333

摘要： A semiconductor laser source using a strained active layer of an indium gallium aluminum nitride (In.sub.x Ga.sub.1-x-y Al.sub.y N) quaternary alloy to obtain semiconductor laser sources that emit TE or TM polarized light in the wavelength range of 200 to 600 nm.

摘要翻译： 使用铟镓铝氮化物（In x Ga 1-x-y Al y N）四元合金的应变有源层的半导体激光源，以获得在200至600nm的波长范围内发射TE或TM偏振光的半导体激光源。

公开(公告)号：US5438584A

公开(公告)日：1995-08-01

申请号：US173812

申请日：1993-12-23

申请人： Thomas L. Paoli ,  David P. Bour

发明人： Thomas L. Paoli ,  David P. Bour

IPC分类号： H01S5/028 ,  H01S5/06 ,  H01S5/062 ,  H01S5/10 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S3/103

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/4031 ,  H01S5/028 ,  H01S5/0602 ,  H01S5/0612 ,  H01S5/06236 ,  H01S5/1039 ,  H01S5/3403 ,  H01S5/3404 ,  H01S5/34326

摘要： A semiconductor laser source using a strained active layer of GaAsP or InGaAsP or AlGaAsP to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range of 600-870 nm. Preferably, the active layer is flanked by confining layers of AlGaAs or (AlGa).sub.0.52 In.sub.0.48 P. The active layer under proper conditions can also emit TE-polarized light. Hence, arrays of side-by-side orthoginally-polarized emitters, or switchable polarized emitters are feasible.

摘要翻译： 使用GaAsP或InGaAsP或AlGaAsP的应变有源层的半导体激光源获得在600-870nm的波长范围内发射TM偏振光的半导体激光源。 优选地，有源层的侧面是AlGaAs或（AlGa）0.52In0.48P的限制层。 在适当条件下的有源层也可以发射TE偏振光。 因此，并排的正原子极化发射器阵列或可切换的极化发射极是可行的。

公开(公告)号：US5412680A

公开(公告)日：1995-05-02

申请号：US210526

申请日：1994-03-18

申请人： Stanley E. Swirhun ,  Thomas J. O'Neill, Jr.

发明人： Stanley E. Swirhun ,  Thomas J. O'Neill, Jr.

IPC分类号： H01S5/183 ,  H01S5/22 ,  H01S5/34 ,  H01S5/42 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18355 ,  H01S5/18308 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/18394 ,  H01S5/3404 ,  H01S5/423

摘要： This invention discloses vertical cavity surface emitting lasers (VCSELs) formed to emit optical radiation that has a controlled direction of polarization. In one embodiment, a VCSEL has an active region that contains at least one strained semiconductor layer which has a preferred direction of electrical conductivity due to the strain. As a result, the optical radiation emitted from the VCSEL has a direction of polarization that is parallel to the preferred direction of conductivity. In another embodiment, a VCSEL has an elongated active region, and the direction of polarization of the radiation emitted from the VCSEL is parallel to a longitudinal axis of the active region. The invention also discloses a VCSEL array comprising vertical cavity surface emitting lasers having elongated active regions. By forming the elongated active regions parallel to each other, the array emits optical radiation having parallel polarization. Alternatively, the array may be formed so that the elongated active regions of adjacent VCSELs of the array are perpendicular to each other. As a result, adjacent VCSELs in the array emit optical radiation having orthogonal polarizations.

摘要翻译： 本发明公开了形成为发射具有受控偏振方向的光辐射的垂直腔表面发射激光器（VCSEL）。 在一个实施例中，VCSEL具有包含至少一个应变半导体层的有源区，该应变半导体层由于应变而具有优选的导电方向。 结果，从VCSEL发射的光辐射具有平行于优选的导电方向的偏振方向。 在另一个实施例中，VCSEL具有细长的有源区，并且从VCSEL发射的辐射的偏振方向平行于有源区的纵轴。 本发明还公开了一种VCSEL阵列，其包括具有细长有源区域的垂直腔表面发射激光器。 通过形成彼此平行的细长有源区域，阵列发射具有平行极化的光辐射。 或者，可以形成阵列，使得阵列的相邻VCSEL的细长有源区彼此垂直。 结果，阵列中的相邻VCSEL发射具有正交偏振的光辐射。

公开(公告)号：US5410562A

公开(公告)日：1995-04-25

申请号：US46451

申请日：1993-04-13

申请人： Do Y. Ahn

发明人： Do Y. Ahn

IPC分类号： H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S2302/00 ,  H01S5/2231 ,  H01S5/3403 ,  H01S5/3404

摘要： A visible wavelength InGaP/InGaAlP semiconductor laser diode with a double hetero (DH) structure capable of shortening the wavelength having a compound semiconductor substrate of a first conductivity type; a compound semiconductor first clad layer of the first conductivity type formed over the substrate; an undoped compound semiconductor active layer formed over the first clad layer, the lattice constant of the active layer being different from the clad layer to tensile strain the active layer; a compound semiconductor second clad layer of a second conductivity type formed over the active layer, the lattice constant of the second clad layer is the same as that of the first clad layer; a compound semiconductor current confining layer of the first conductivity type formed over the second clad layer except for a central region such that current in the central region flows parallel to the growth direction; a compound semiconductor cap layer of the second conductivity type formed over the current confining layer; a first electrode formed over the central portion of the cap layer; and a second electrode formed on the lower surface of the substrate.

摘要翻译： 具有能够缩短具有第一导电类型的化合物半导体衬底的波长的双杂（DH）结构的可见波长InGaP / InGaAlP半导体激光二极管; 在基板上形成第一导电类型的化合物半导体第一包层; 形成在所述第一包层上的未掺杂的化合物半导体有源层，所述有源层的晶格常数不同于所述覆盖层以对所述有源层拉伸应变; 在有源层上形成第二导电类型的化合物半导体第二包覆层，第二覆盖层的晶格常数与第一覆盖层的晶格常数相同; 形成在除了中心区域之外的第二包层上的第一导电类型的化合物半导体电流限制层，使得中心区域中的电流平行于生长方向流动; 形成在电流限制层上的第二导电类型的化合物半导体盖层; 形成在所述盖层的中心部分上的第一电极; 以及形成在所述基板的下表面上的第二电极。