公开(公告)号：US20070195452A1

公开(公告)日：2007-08-23

申请号：US11360243

申请日：2006-02-23

Applicant: Mark Covington ,  Thomas Ambrose ,  Michael Seigler ,  Hua Zhou

Inventor： Mark Covington ,  Thomas Ambrose ,  Michael Seigler ,  Hua Zhou

IPC: G11B5/37

CPC classification number: G11B5/3906 ,  B82Y25/00 ,  G01R33/07 ,  H01F10/3218 ,  H01F10/324 ,  H01F10/3286 ,  H01L43/06

Abstract: A magnetic field sensor includes a metallic bar coupled to a substrate. Current leads are adapted to provide current to the ferromagnetic bar. Voltage leads are coupled to the ferromagnetic bar to sense an induced Hall voltage therein.

Abstract translation: 磁场传感器包括耦合到衬底的金属棒。 电流引线适于向铁磁条提供电流。 电压引线耦合到铁磁条以感测其中的感应霍尔电压。

公开(公告)号：US07220499B2

公开(公告)日：2007-05-22

申请号：US10823484

申请日：2004-04-13

Applicant: Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

Inventor： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC: G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

Abstract translation: CPP巨磁阻头包括其间具有预定距离的下屏蔽层和上屏蔽层，以及包括固定和自由磁性层的巨磁阻元件（GMR），其设置在上屏蔽层和下屏蔽层之间，其中非磁性层插入在固定和自由磁性层之间 层。 A电流垂直于GMR的膜平面流动。 磁阻头还包括设置在GMR后部的反铁磁层（Ni-O或α-Fe 2 O 3 3 3的绝缘AF），其高度方向为 与在高度方向上延伸的被钉扎磁性层的后部的上表面或下表面接触，并且在与上表面或下表面的界面处产生交换耦合磁场，使得固定的磁化方向 磁性层被高度方向的交换耦合磁场固定。

公开(公告)号：US07123453B2

公开(公告)日：2006-10-17

申请号：US11091052

申请日：2005-03-28

Applicant: Naoya Hasegawa ,  Masamichi Saito

Inventor： Naoya Hasegawa ,  Masamichi Saito

IPC: G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/32

Abstract: A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in the present invention, the crystal grain boundaries formed in an antiferromagnetic layer (PtMn alloy film) and the crystal grain boundaries formed in a ferromagnetic layer are made discontinuous in at least a portion of the interface between both layers. As a result, the antiferromagnetic layer can be appropriately transformed to an ordered lattice by heat treatment to obtain a larger exchange coupling magnetic field than a conventional element.

公开(公告)号：US07119998B2

公开(公告)日：2006-10-10

申请号：US11207702

申请日：2005-08-17

Applicant: Naoya Hasegawa ,  Masamichi Saito

Inventor： Naoya Hasegawa ,  Masamichi Saito

IPC: G11B5/66 ,  G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12826 ,  Y10T428/12854 ,  Y10T428/265 ,  Y10T428/32

Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

公开(公告)号：US06891703B2

公开(公告)日：2005-05-10

申请号：US10197955

申请日：2002-07-18

Applicant: Naoya Hasegawa

Inventor： Naoya Hasegawa

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325

Abstract: A first magnetic sublayer includes a region containing X (e.g., Cr), which extends from the interface with an antiferromagnetic layer toward a nonmagnetic intermediate sublayer, and a region not containing X, which extends from the interface with the nonmagnetic intermediate sublayer toward the antiferromagnetic layer. Consequently, both the unidirectional exchange bias magnetic field (Hex*) in the pinned magnetic layer and the rate of change in resistance (ΔR/R) can be improved.

Abstract translation: 第一磁性子层包括从具有反铁磁层的界面向非磁性中间子层延伸的X（例如Cr）的区域和不包含X的区域，其从与非磁性中间子层的界面朝向反铁磁性 层。 因此，能够提高钉扎磁性层中的单向交换偏置磁场（Hex *）和电阻变化率（DeltaR / R）。

公开(公告)号：US06835464B2

公开(公告)日：2004-12-28

申请号：US10251278

申请日：2002-09-19

Applicant: Thomas F. Ambrose ,  Timothy John Klemmer ,  Rene Johannes Marinus van de Veerdonk ,  Gregory John Parker ,  James K. Howard

Inventor： Thomas F. Ambrose ,  Timothy John Klemmer ,  Rene Johannes Marinus van de Veerdonk ,  Gregory John Parker ,  James K. Howard

IPC: H01F100

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/30 ,  H01F10/3218 ,  H01F10/3286 ,  H01F41/302 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12868 ,  Y10T428/1291 ,  Y10T428/32

Abstract: A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.

Abstract translation: 垂直交换偏置装置包括在衬底的表面上的缓冲材料层，缓冲层表面上的铁磁材料层，其中铁磁层的磁化位于垂直于层的平面的方向 铁磁材料，以及在铁磁材料层的表面上的一层反铁磁材料。 一种制造垂直交换偏置装置的方法，包括将缓冲材料层定位在衬底的表面上，将铁磁材料层定位在缓冲材料层的表面上，其中铁磁层的磁化位于方向 垂直于铁磁材料层的平面，并且在铁磁材料层的表面上定位一层反铁磁材料。

公开(公告)号：US20040151947A1

公开(公告)日：2004-08-05

申请号：US10482465

申请日：2003-12-31

Inventor： Bernard Rodmacq ,  Stephane Landis ,  Bernard Dieny

IPC: G11B005/66

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/09 ,  G11B5/74 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855 ,  G11C11/14 ,  H01F10/002 ,  H01F10/3218 ,  H01F10/3286 ,  H01F41/308

Abstract: An information storage medium with an array of laterally magnetised dots, as well as a process for producing this medium. Each dot (2) contains at least one magnetic domain formed by a thin layer (4) of at least a magnetic material laterally covering this flat material and deposited at oblique incidence relative to the normal (z) to the plane (6) of the array. The invention applies in particular to computer hard drives.

Abstract translation: 具有横向磁化点阵列的信息存储介质，以及用于生产该介质的方法。 每个点（2）包含至少一个由至少一个磁性材料的薄层（4）形成的磁畴，横向覆盖该平坦材料并相对于法线（z）以 数组。 本发明特别适用于计算机硬盘驱动器。

公开(公告)号：US20040022108A1

公开(公告)日：2004-02-05

申请号：US10631576

申请日：2003-07-31

Inventor： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Naoya Hasegawa

IPC: G11C007/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/325 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115

Abstract: A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.

公开(公告)号：US06650513B2

公开(公告)日：2003-11-18

申请号：US09772468

申请日：2001-01-29

Applicant: Eric Edward Fullerton ,  Stefan Maat ,  Stuart Stephen Papworth Parkin ,  Kentaro Takano

Inventor： Eric Edward Fullerton ,  Stefan Maat ,  Stuart Stephen Papworth Parkin ,  Kentaro Takano

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/66 ,  H01F10/30 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3286 ,  Y10T428/1114

Abstract: The invention is a magnetic device that includes a ferromagnetic/antiferromagnetic (F/AF) structure wherein the ferromagnetic layer is perpendicularly exchange biased by the antiferromagnetic layer. The invention has application to perpendicular magnetic recording disks and magnetic tunnel junction devices used as read heads for disk drives and memory cells in magnetic memory arrays.

Abstract translation: 本发明是一种磁性装置，其包括铁磁/反铁磁（F / AF）结构，其中铁磁层由反铁磁层垂直交换偏置。 本发明适用于用作磁存储器阵列中的磁盘驱动器和存储单元的读磁头的垂直磁记录盘和磁隧道结装置。

公开(公告)号：US06639762B2

公开(公告)日：2003-10-28

申请号：US09764003

申请日：2001-01-17

Applicant: Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

Inventor： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

IPC: G11B533

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49034 ,  Y10T29/49043

Abstract: A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.

Abstract translation: 提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。 自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。 在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成， 第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性 州。 此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。