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公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
Applicant: Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
Inventor： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC: G11B5/33
CPC classification number: G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
Abstract: An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
Abstract translation: 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。
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2.发明授权Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers 有权隧道磁阻元件，其包括Mg-O阻挡层，其中非磁性金属子层设置在磁性层之一中公开(公告)号：US07969690B2
公开(公告)日：2011-06-28
申请号：US12042585
申请日：2008-03-05
Applicant: Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
Inventor： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC: G11B5/39
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
Abstract: In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
Abstract translation: 在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。 非磁性金属子层的平均厚度为约1埃以上且约5以下。
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3.发明授权公开(公告)号：US07907370B2
公开(公告)日：2011-03-15
申请号：US11851570
申请日：2007-09-07
Applicant: Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
Inventor： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Masahiko Ishizone , Ryo Nakabayashi , Naoya Hasegawa
IPC: G11B5/39
CPC classification number: G11B5/3163 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/16 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/08 , H01L43/12
Abstract: A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
Abstract translation: 公开了一种隧道式磁感应元件，其包括能够保持自由磁性层的有利的软磁性能并且与已知的隧道磁传感元件相比可以具有高电阻变化率（＆Dgr; R / R）的Mg-O绝缘屏障， 并且还公开了制造这种隧道磁传感元件的方法。 在Mg-O绝缘屏障上设置由Fe组成比X为约30〜100原子％的Co100-XFeX构成的增强层（第二磁性层）。 由此，可以减小自由磁层的磁致伸缩λ，并且可以增加电阻变化率（＆Dgr; R / R）。
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4.发明授权Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys 有权磁传感元件包括自由磁层或具有两个由不同CoMn基合金合金构成的子层的固定磁层公开(公告)号：US07724481B2
公开(公告)日：2010-05-25
申请号：US11504147
申请日：2006-08-15
Applicant: Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Kazumasa Nishimura , Naoya Hasegawa
Inventor： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Kazumasa Nishimura , Naoya Hasegawa
CPC classification number: G01R33/093 , B82Y25/00 , Y10T428/1121 , Y10T428/115
Abstract: A magnetic sensing element is provided. A free magnetic layer has a three-layer structure including CoMnα sublayers each composed of a metal compound represented by the formula: Co2xMnxαy. The α contains an element β and Sb, the element β being at least one element selected from Ge, Ga, In, Si, Pb, Zn, Sn, and Al. The concentration x and the concentration y are each represented in terms of atomic percent and satisfy the equation: 3x+y=100 atomic percent. One of the CoMnα sublayers is in contact with a lower nonmagnetic material layer. The other CoMnα sublayer is in contact with upper nonmagnetic material layer. As a result, it is possible to achieve a high ΔRA and a lower interlayer coupling magnetic field Hin compared with the known art.
Abstract translation: 提供了一种磁传感元件。 自由磁性层具有包含CoMnα亚层的三层结构，各层由以下通式表示的金属化合物构成：Co2xMnxαy。 α包含元素＆bgr; 和Sb，元素＆bgr; 是选自Ge，Ga，In，Si，Pb，Zn，Sn和Al中的至少一种元素。 浓度x和浓度y均以原子百分比表示，满足下式：3x + y = 100原子％。 CoMnα子层中的一个与较低的非磁性材料层接触。 另一个CoMnα子层与上部非磁性材料层接触。 结果，与已知技术相比，可以实现高的＆Dgr。RA和较低的层间耦合磁场Hin。
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5.发明授权Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer 失效具有包含非磁性金属层的自由层的隧道效应型磁传感器公开(公告)号：US07643254B2
公开(公告)日：2010-01-05
申请号：US11671819
申请日：2007-02-06
Applicant: Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
Inventor： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC: G11B5/39
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
Abstract: A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
Abstract translation: 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。
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Patent Agency Ranking
公开(公告)号：US07609489B2
公开(公告)日：2009-10-27
申请号：US11366002
申请日：2006-02-28
Applicant: Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
Inventor： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC: G11B5/33
CPC classification number: G11B5/3929
Abstract: A magnetic sensor comprising: a multilayer film which has a pinned magnetic layer, the magnetization thereof being pinned in one direction, and a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic material layer provided therebetween, in which current is allowed to flow in a direction perpendicular to the surfaces of the layers forming the multilayer film, wherein the pinned magnetic layer has a NiaFeb alloy layer (where a and b each indicate atomic percent, and 0
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7.发明授权Spin valve-GMR element in which a non-metal laminate layer is provided as a free magnetic layer and method of manufacturing the same 有权旋转阀-GMR元件，其中提供非金属层压层作为自由磁性层及其制造方法公开(公告)号：US07499249B2
公开(公告)日：2009-03-03
申请号：US11409879
申请日：2006-04-24
Applicant: Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
Inventor： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC: G11B5/39
CPC classification number: H01F41/302 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3929 , H01F10/1936 , H01F10/3263 , H01F10/3268 , H01F10/3281 , H01F10/3295 , H01L43/10 , Y10T29/49021
Abstract: A magnetic detecting element capable of maintaining a large ΔRA and reducing magnetostriction by changing a material of a free magnetic layer, and a method of manufacturing the same is provided. A CoMnXZ alloy layer or CoMnXRh alloy layer is formed in a free magnetic layer where an element X is at least one or two elements of Ge, Ga, In, Si, Pb, and Zn, and an element X in the latter case is at least one or two elements of Ge, Ga, In, Si, Pb, Zn, Sn, Al, and Sb. By forming the CoMnXZ alloy layer or the CoMnXRh alloy layer in the free magnetic layer, the magnetostriction of the free magnetic layer can be reduced while maintaining the large ΔRA, compared with a case where only the CoMnX alloy is formed.
Abstract translation: 提供能够维持大的DeltaRA并通过改变自由磁性层的材料来减小磁致伸缩的磁性检测元件及其制造方法。 在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，其中元素X是Ge，Ga，In，Si，Pb和Zn中的至少一种或两种元素，后一种情况下的元素X在 Ge，Ga，In，Si，Pb，Zn，Sn，Al和Sb中的至少一种或两种元素。 通过在自由磁性层中形成CoMnXZ合金层或CoMnXRh合金层，与仅形成CoMnX合金的情况相比，可以减小自由磁性层的磁致伸缩，同时保持较大的DeltaRA。
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8.发明授权Magnetic sensor including bridge circuit having fixed resistance like structure of element 有权磁传感器包括具有固定电阻的桥接电路，如元件结构公开(公告)号：US07463026B2
公开(公告)日：2008-12-09
申请号：US11679083
申请日：2007-02-26
Applicant: Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
Inventor： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
CPC classification number: H04M1/0245 , B82Y25/00 , G01R33/07 , G01R33/093 , H04M2250/12
Abstract: A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
Abstract translation: 磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。 第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。 第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。 因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。
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公开(公告)号：US07428128B2
公开(公告)日：2008-09-23
申请号：US10755416
申请日：2004-01-12
Applicant: Naoya Hasegawa , Masamichi Saito
Inventor： Naoya Hasegawa , Masamichi Saito
CPC classification number: G11B5/3906
Abstract: A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an electric current flows through these layers in parallel to the surfaces. The back end of the free magnetic layer in the track width direction extends in parallel to the track width direction. The back ends of the nonmagnetic conductive layers are coincident with the reference line drawn by extending the back end of the free magnetic layer. At least part of the back ends of the pinned magnetic layers is coincident with the reference line. Each pinned magnetic layer is shaped so that the region near the nonmagnetic conductive layer and the free magnetic layer has a smaller length in the height direction to achieve higher current density.
Abstract translation: 磁传感元件具有在磁道宽度方向上设置在自由磁性层的两侧上的非磁性导电层的固定磁性层，并且电流平行于表面流过这些层。 轨道宽度方向上的自由磁性层的后端与轨道宽度方向平行地延伸。 非磁性导电层的后端与通过延伸自由磁性层的后端拉出的参考线重合。 被钉扎的磁性层的后端的至少一部分与参考线重合。 每个被钉扎的磁性层的形状使得非磁性导电层和自由磁性层附近的区域在高度方向上具有较小的长度以实现更高的电流密度。
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10.发明申请TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER 失效具有无磁层的隧道效应型磁传感器，包括非磁性金属层公开(公告)号：US20080158739A1
公开(公告)日：2008-07-03
申请号：US11671819
申请日：2007-02-06
Applicant: Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
Inventor： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC: G11B5/39
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
Abstract: A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
Abstract translation: 隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和 第二软磁层，从底部依次层叠。 例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。 第一软磁性层的平均厚度形成在5〜60的范围内。 因此，可以获得高电阻变化率（DeltaR / R）。
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