Invention Grant
- Patent Title: Thin film device with perpendicular exchange bias
- Patent Title (中): 具有垂直交换偏置的薄膜器件
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Application No.: US10251278Application Date: 2002-09-19
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Publication No.: US06835464B2Publication Date: 2004-12-28
- Inventor: Thomas F. Ambrose , Timothy John Klemmer , Rene Johannes Marinus van de Veerdonk , Gregory John Parker , James K. Howard
- Applicant: Thomas F. Ambrose , Timothy John Klemmer , Rene Johannes Marinus van de Veerdonk , Gregory John Parker , James K. Howard
- Main IPC: H01F100
- IPC: H01F100
Abstract:
A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.
Public/Granted literature
- US20030228491A1 Thin film device with perpendicular exchange bias Public/Granted day:2003-12-11
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