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    Method of making a metal oxide film, laminates and electronic devices
    81.
    发明申请
    Method of making a metal oxide film, laminates and electronic devices 有权
    制造金属氧化物膜，层压板和电子器件的方法

    公开(公告)号：US20080044673A1

    公开(公告)日：2008-02-21

    申请号：US11812506

    申请日：2007-06-19

    申请人： Yuki Miyamoto ,  Tetsuo Tsuchiya

    发明人： Yuki Miyamoto ,  Tetsuo Tsuchiya

    IPC分类号： B32B15/04 ,  B05D3/02

    CPC分类号： C23C18/14 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1283 ,  C23C18/1295 ,  H01G4/1209 ,  H01G4/1227 ,  H01G4/33

    摘要： An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600° C. and irradiating the metal oxide film with UV light.

    摘要翻译： 本发明的目的是提供一种以低成本制造具有足够高的晶体取向度的金属氧化物膜的方法，并且对基材和金属氧化物膜几乎没有损伤，并且提供层压板和电子器件 使用相同 一种方法包括在基材上形成具有（111）面的金属膜的步骤; 在金属膜的（111）面上形成金属氧化物膜的工序; 以及在金属膜的（111）面上形成的金属氧化物膜的温度保持在25〜600℃的步骤，并用紫外线照射金属氧化物膜。

    Process for producing metal oxide flakes
    83.
    发明申请
    Process for producing metal oxide flakes 失效
    生产金属氧化物薄片的方法

    公开(公告)号：US20070243337A1

    公开(公告)日：2007-10-18

    申请号：US11732405

    申请日：2007-04-03

    申请人： Rong Xiong ,  Patrice Bujard

    发明人： Rong Xiong ,  Patrice Bujard

    IPC分类号： B05D1/36 ,  C08J7/18

    CPC分类号： C09C1/0018 ,  B82Y30/00 ,  C01B13/32 ,  C01B33/12 ,  C01F7/36 ,  C01G3/02 ,  C01G9/02 ,  C01G17/02 ,  C01G19/02 ,  C01G23/047 ,  C01G23/053 ,  C01G25/02 ,  C01G31/02 ,  C01G37/033 ,  C01G51/04 ,  C01P2004/20 ,  C01P2004/62 ,  C01P2004/64 ,  C09C3/063 ,  C09C2200/301 ,  C09C2220/10 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/14

    摘要： The present invention relates to a process for the preparation of a plane-parallel structure (a platelet-shaped body, or flake), comprising at least one dielectric layer consisting of oxides of one or more metal selected from groups 3 to 15 of the periodic table, which method comprises: (a) optionally applying a layer of release material on a substrate, (b) applying a composition comprising one or more precursors of one or more desired metal oxides to said release layer, or directly to a substrate with no layer of release material, (c) subjecting the one or more precursors of one or more desired metal oxides to microwave radiation to form a metal oxide layer on the substrate or on the layer of release material; and (d) separating the resulting metal oxide layer from the substrate as plane-parallel structures.

    摘要翻译： 本发明涉及一种制备平面平行结构（片状体或薄片）的方法，其包括至少一个介电层，该电介质层由选自周期表中第3至15组的一种或多种金属的氧化物组成 该方法包括：（a）任选地在基材上施加一层剥离材料，（b）将包含一种或多种所需金属氧化物的一种或多种前体的组合物施加到所述剥离层上，或直接施加到基材上， 释放材料层，（c）使一种或多种所需金属氧化物的一种或多种前体经受微波辐射，以在基材或剥离材料层上形成金属氧化物层; 和（d）将所得到的金属氧化物层与基板分离为平面 - 平行结构。

    Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
    85.
    发明申请
    Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions 有权
    线性和交联的高分子量聚硅烷，聚锗及其共聚物，含有它们的组合物，以及制备和使用这些化合物和组合物的方法

    公开(公告)号：US20070078252A1

    公开(公告)日：2007-04-05

    申请号：US11543414

    申请日：2006-10-05

    申请人： Vladimir Dioumaev

    发明人： Vladimir Dioumaev

    IPC分类号： C08G77/12

    CPC分类号： C08G77/60 ,  C08G79/00 ,  C23C18/122 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1295 ,  C23C18/14

    摘要： Methods are disclosed of making linear and cross-linked, HMW (high molecular weight) polysilanes and polygermanes, polyperhydrosilanes and polyperhydrogermanes, functional liquids containing the same, and methods of using the liquids in a range of desirable applications. The silane and germane polymers are generally composed of chains of Si and/or Ge substituted with R′ substituents, where each instance of R′ is, for example, independently hydrogen, halogen, alkenyl, alkynyl, hydrocarbyl, aromatic hydrocarbyl, heterocyclic aromatic hydrocarbyl, SiR″3, GeR″3, PR″2, OR″, NR″2, or SR″; where each instance of R″ is independently hydrogen or hydrocarbyl. The cross-linked polymers can be synthesized by dehalogenative coupling or dehydrocoupling. The linear polymers can be synthesized by ring-opening polymerization. The polymers can be further modified by halogenation and/or reaction with the source of hydride to furnish perhydrosilane and perhydrogermane polymers, which are used in liquid ink formulations. The synthesis allows for tuning of the liquid properties (e.g., viscosity, volatility, and surface tension). The liquids can be used for deposition of films and bodies by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation. The deposited films can be converted into amorphous and polycrystalline silicon or germanium, and silicon or germanium oxide or nitride by curing at 400-600 DEG C. and (optionally) laser- or heat-induced crystallization (and/or dopant activation, when dopant is present).

    摘要翻译： 公开了制备线性和交联的HMW（高分子量）聚硅烷和多晶硅，多聚氢硅烷和聚多异氰酸酯，含有它们的功能性液体的方法以及在所需应用范围内使用液体的方法。 硅烷和锗烷聚合物通常由被R'取代基取代的Si和/或Ge的链组成，其中R'的每个实例是例如独立的氢，卤素，烯基，炔基，烃基，芳族烃基，杂环芳族烃基 ，SiR“3”，“NR”3，PR“2”，“OR”，NR“2 < SUB>或SR“; 其中R“的每个实例独立地为氢或烃基。 交联聚合物可以通过脱卤偶联或脱氢键合合成。 线性聚合物可以通过开环聚合合成。 可以通过与氢化物源卤化和/或反应来进一步改性聚合物，以提供用于液体油墨配方中的全氢硅烷和全氢化锗烷聚合物。 该合成允许调节液体性质（例如粘度，挥发性和表面张力）。 在使用或不使用紫外线照射下，液体可用于通过旋涂，喷墨，滴灌等沉积膜和物体。 沉积的膜可以通过在400-600℃和（任选地）激光或热诱导的结晶（和/或掺杂剂活化，当掺杂剂时）固化而转化成无定形和多晶硅或锗，以及硅或氧化锗或氮化物 存在）。