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1.发明申请Organometallic precursor composition and method of forming metal film or pattern using the same 失效有机金属前体组合物及使用其形成金属膜或图案的方法公开(公告)号：US20050084689A1
公开(公告)日：2005-04-21
申请号：US10874284
申请日：2004-06-24
申请人： Euk Hwang , Sang Lee , Young Byun , Joon Ryu , Hae Son
发明人： Euk Hwang , Sang Lee , Young Byun , Joon Ryu , Hae Son
CPC分类号： C23C18/06 , C23C18/08 , C23C18/1216 , C23C18/14 , Y10T428/31678
摘要： A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.
摘要翻译： （i）含有与中心金属配位的肼化合物的有机金属前体和（ii）主族金属的有机金属化合物的组合物和使用该组合物形成金属膜或图案的方法。
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2.发明申请Siloxane-based resin and a semiconductor interlayer insulating film using the same 有权硅氧烷树脂和使用其的半导体层间绝缘膜公开(公告)号：US20050003681A1
公开(公告)日：2005-01-06
申请号：US10722460
申请日：2003-11-28
IPC分类号： C08G77/50 , B32B17/02 , B32B25/20 , C08G77/04 , C09D183/04 , C09D183/14 , H01B3/46 , H01L21/00 , H01L21/31 , H01L21/312 , H01L21/469 , H01L21/768 , H01L23/522
CPC分类号： H01B3/46 , C08G77/50 , C09D183/14 , Y10T428/2962 , Y10T428/2995 , Y10T428/31663
摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
摘要翻译： 具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。 除了优异的机械性能之外，硅氧烷类树脂具有低介电常数，并且是半导体器件的互连层之间的绝缘膜中的有用材料。
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3.发明申请Siloxane-based resin and a semiconductor interlayer insulating film using the same 有权硅氧烷树脂和使用其的半导体层间绝缘膜公开(公告)号：US20060264595A1
公开(公告)日：2006-11-23
申请号：US11431707
申请日：2006-05-11
CPC分类号： H01B3/46 , C08G77/50 , C09D183/14 , Y10T428/2962 , Y10T428/2995 , Y10T428/31663
摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.
摘要翻译： 具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。 除了优异的机械性能之外，硅氧烷类树脂具有低介电常数，并且是半导体器件的互连层之间的绝缘膜中的有用材料。
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4.发明申请Novel siloxane-based resin and interlayer insulating film formed using the same 有权新型硅氧烷类树脂和使用其形成的层间绝缘膜公开(公告)号：US20050049382A1
公开(公告)日：2005-03-03
申请号：US10768058
申请日：2004-02-02
申请人： Yi Lyu , Jin Yim , Ki Song , Hyun Jeong , Joon Ryu
发明人： Yi Lyu , Jin Yim , Ki Song , Hyun Jeong , Joon Ryu
IPC分类号： C08G77/50 , C08G77/14 , C08L83/04 , C09D183/14 , H01L21/312 , H01L21/316 , C08G77/60
CPC分类号： C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695 , Y10T428/31663
摘要： A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.
摘要翻译： 具有新颖结构的硅氧烷类树脂和使用其的半导体层间绝缘膜。 除了优异的机械性能之外，硅氧烷类树脂具有低的介电常数，并且是在半导体器件的互连层之间的绝缘膜中的有用材料。
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