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    Spin transistor and method of operating the same
    83.
    发明授权
    Spin transistor and method of operating the same 有权
    旋转晶体管及其操作方法

    公开(公告)号：US08269293B2

    公开(公告)日：2012-09-18

    申请号：US12742221

    申请日：2008-11-04

    Applicant: Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

    Inventor： Ki-Ha Hong ,  Sung-Hoon Lee ,  Jong-Seob Kim ,  Jai-Kwang Shin

    IPC: H01L29/82

    CPC classification number: H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

    Abstract: Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.

    Abstract translation: 公开了自旋晶体管和操作自旋晶体管的方法。 所公开的自旋晶体管包括由选择性地通过具有特定方向的自旋极化电子的磁性材料形成的沟道，由磁性材料形成的源极，漏极和栅电极。 当预定电压施加到栅电极时，沟道选择性地通过具有特定方向的自旋极化电子，因此自旋晶体管选择性地导通。

    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same
    88.
    发明申请
    Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same 失效
    使用擦除栅极进行擦除操作的半导体存储器件及其制造方法

    公开(公告)号：US20080164510A1

    公开(公告)日：2008-07-10

    申请号：US11980351

    申请日：2007-10-31

    Applicant: Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    Inventor： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

    IPC: H01L29/788 ,  H01L21/336

    CPC classification number: H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

    Abstract: A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

    Abstract translation: 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

    Method of forming metal line and contact plug of flash memory device
    89.
    发明授权
    Method of forming metal line and contact plug of flash memory device 有权
    形成闪存器件金属线和接触插头的方法

    公开(公告)号：US07381640B2

    公开(公告)日：2008-06-03

    申请号：US11483797

    申请日：2006-07-10

    Applicant: Sung Hoon Lee

    Inventor： Sung Hoon Lee

    IPC: H01L21/4763

    CPC classification number: H01L21/76808 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/115 ,  H01L27/11521

    Abstract: A method of forming a metal line and a contact plug of a flash memory device, wherein if first, second, and third etch processes are performed on an anti-reflection film and regions (a region in which a contact plug through which a gate is exposed is formed/a region in which a contact plug through which a semiconductor substrate is exposed is formed), which have different etch targets and have an irregular thickness, the loss of a semiconductor substrate can be minimized and an increase in the resistance of the contact plugs can be prevented. Furthermore, by reducing variation in the depth of the contact plugs, the reliability of devices can be improved.

    Abstract translation: 一种形成闪存器件的金属线和接触插塞的方法，其中如果在抗反射膜上进行第一，第二和第三蚀刻处理，并且在该区域（栅极所通过的接触插塞 暴露于其中形成有暴露半导体衬底的接触插塞的区域），其具有不同的蚀刻目标并且具有不规则的厚度，可以使半导体衬底的损耗最小化并且增加电阻 可以防止接触塞。 此外，通过减小接触插塞的深度的变化，可以提高器件的可靠性。

    Apparatus and method for accessing private wireless internet packet data communication system
    90.
    发明授权
    Apparatus and method for accessing private wireless internet packet data communication system 有权
    用于接入专用无线互联网分组数据通信系统的装置和方法

    公开(公告)号：US07346024B2

    公开(公告)日：2008-03-18

    申请号：US10259818

    申请日：2002-09-30

    Applicant: Sung-Hoon Lee

    Inventor： Sung-Hoon Lee

    IPC: H04Q7/00

    CPC classification number: H04W88/00 ,  H04W84/16 ,  H04W88/005 ,  H04W92/14

    Abstract: An apparatus and method for accessing a private wireless Internet packet data communication system. A private packet data service apparatus includes a plurality of private BTSs positioned in an private packet data service zone and an private BSC for providing a wireless packet data service using a CDMA method. The private BTSs wirelessly communicate with terminals contained in a corresponding service zone. In the case where dialing numbers of calls requested by the private BTSs are not private packet service request signals, the private BSC transmits the calls to a public network BSC. In the case where dialing numbers of calls requested by the private BTSs are private packet service request signals, the private BSC provides the calls with a packet data service for which a non-authentication, a non-accounting, and an IP service are available. The private BSC includes a PDCC (Packet Data Call Controller), a PDTC (Packet Data Traffic Controller), and a PDMA (Packet Data Maintenance & Administration part). The PDCC generates or terminates an RP (Radio Packet) connection needed to perform packet data transmission/reception of a terminal between an AMC and a DCN (Data Core Network), and processes a state conversion concerning a packet call. The PDTC performs data transmission/reception between the AMC and the DCN. The PDMA performs an interface between a BAN and maintenance/administration blocks, checks states of the AMC and an ATM PVC, and checks a link state between the AMC and a DCN.

    Abstract translation: 一种用于访问专用无线因特网分组数据通信系统的装置和方法。 专用分组数据服务装置包括位于专用分组数据业务区域中的多个专用BTS，以及使用CDMA方式提供无线分组数据业务的专用BSC。 私有BTS与相应服务区域中包含的终端进行无线通信。 在私有BTS所请求的呼叫号码不是专用分组业务请求信号的情况下，专用BSC向公共网络BSC发送呼叫。 在由专用BTS请求的呼叫号码是专用分组业务请求信号的情况下，专用BSC向非认证，非计费和IP业务可用的分组数据业务提供呼叫。 专用BSC包括PDCC（分组数据呼叫控制器），PDTC（分组数据业务控制器）和PDMA（分组数据维护和管理部分）。 PDCC生成或终止在AMC和DCN（数据核心网络）之间执行终端的分组数据发送/接收所需的RP（无线分组）连接，并且处理关于分组呼叫的状态转换。 PDTC在AMC和DCN之间执行数据发送/接收。 PDMA执行BAN和维护/管理块之间的接口，检查AMC和ATM PVC的状态，并检查AMC和DCN之间的链路状态。

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