公开(公告)号：US4504865A

公开(公告)日：1985-03-12

申请号：US418677

申请日：1982-09-16

申请人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Makoto Murakoshi ,  Koji Shimanuki

发明人： Jun-ichi Nishizawa ,  Tadahiro Ohmi ,  Makoto Murakoshi ,  Koji Shimanuki

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/374 ,  H04N5/378 ,  H04N9/04 ,  H01L27/14

CPC分类号： H04N3/1568 ,  H04N9/045

摘要： From each of a plurality of picture element cells having a non-destructive readout characteristic, arranged two-dimensionally and connected to the same signal output line, an image signal is read out without mutual interference of the picture elements. To this end, a blanking period is provided between the readout periods of the respective picture element cells connected to the same signal output line and, in this blanking period, the signal output line is cleared (refreshed).

摘要翻译： 从具有非破坏性读出特性的多个像素单元中的每一个二维排列并连接到相同的信号输出线，在没有图像元素的相互干扰的情况下读出图像信号。 为此，在连接到同一信号输出线的各个像素单元的读出周期之间设置消隐期，在该消隐期间，信号输出线被清除（刷新）。

公开(公告)号：US4434433A

公开(公告)日：1984-02-28

申请号：US174724

申请日：1980-08-04

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： G11C11/35 ,  G11C11/404 ,  G11C13/04 ,  H01L27/102 ,  H01L29/772 ,  H01L27/10 ,  G11C11/40 ,  H01L27/12 ,  H01L29/80

CPC分类号： G11C13/047 ,  G11C11/35 ,  G11C11/404 ,  H01L27/1023 ,  H01L29/7722 ,  H01L29/7841

摘要： A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

摘要翻译： 多个场效应型半导体存储元件垂直于半导体晶片的表面形成。 电荷载体在垂直于表面的半导体体中传输，并且在电流路径中形成势垒以完成存储。 由于半导体的体迁移率远大于表面迁移率，所以载流子的通行时间大大提高。 此外，由于存储单元的每个结构垂直于半导体表面形成，所以每个存储单元的表面占有面积减小。 因此，提供了高速和高密度半导体存储器件。

公开(公告)号：US4427990A

公开(公告)日：1984-01-24

申请号：US39445

申请日：1979-05-15

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L27/146 ,  H01L31/112 ,  H01L29/80

CPC分类号： H01L27/14679 ,  H01L31/1126

摘要： A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.

摘要翻译： 通过电绝缘静电感应晶体管的栅极区域提供高灵敏度半导体光电转换器，其表现出非饱和电流对电压特性。 将光电离的少数载流子存储在栅极区域中以控制其电位。 设置有绝缘栅极的半导体栅极区域非常有效地增强了转换器的动态范围。 非饱和特性可以简单地通过增加漏极电压来扩大输出电流。 可以通过集成多个静电感应型光电转换器元件来实现高速和高灵敏度的图像拾取装置。 开关晶体管可以合并在每个光电转换器元件的栅极区域中，以增强图像拾取装置的操作速度。

公开(公告)号：US4415937A

公开(公告)日：1983-11-15

申请号：US326879

申请日：1981-12-02

申请人： Jun-ichi Nishizawa ,  Masahiro Konishi

发明人： Jun-ichi Nishizawa ,  Masahiro Konishi

IPC分类号： H04N5/91 ,  H01L27/146 ,  H04N1/21 ,  H04N5/335 ,  G11B5/00 ,  H04N5/76

CPC分类号： H04N1/2158 ,  H01L27/14679 ,  H04N1/2112 ,  H04N2101/00 ,  Y10S358/906

摘要： A solid-state image storage device employing a recording system which permits easy reproduction of an excellent image even if a relatively low-grade recording medium and recording and reproducing device are used. The solid-state image storage device is provided with a photoelectric converter having a plurality of non-destructive readout image sensor cells arranged in a predetermined form; a scanner for scanning the photoelectric converter to read out image information of the image sensor cells; and a recorder having a recording medium for recording the image information read out by the scanner. An image formed on the photoelectric converter is read out by the scanner a plurality of times and each image information thus read out is recorded at one position on the recording medium of the recorder.

摘要翻译： 一种使用记录系统的固态图像存储装置，即使使用相对低等级的记录介质和记录和再现装置，也能够容易地再现优异的图像。 固态图像存储装置设置有具有以预定形式布置的多个非破坏性读出图像传感器单元的光电转换器; 用于扫描光电转换器以读出图像传感器单元的图像信息的扫描器; 以及具有用于记录由扫描仪读出的图像信息的记录介质的记录器。 由光电转换器形成的图像由扫描器多次读出，并且由此读出的每个图像信息被记录在记录器的记录介质上的一个位置处。

公开(公告)号：US4389256A

公开(公告)日：1983-06-21

申请号：US270816

申请日：1981-06-05

申请人： Jun-ichi Nishizawa ,  Kazuomi Ito

发明人： Jun-ichi Nishizawa ,  Kazuomi Ito

IPC分类号： C30B31/02 ,  H01L21/368 ,  H01L21/383 ,  H01L21/385 ,  H01L21/40 ,  H01L29/227 ,  H01L33/28 ,  H01L33/40 ,  H01L21/324

CPC分类号： H01L33/0083 ,  C30B29/48 ,  C30B31/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/40 ,  H01L29/227 ,  Y10S438/971

摘要： A method of manufacturing a pn junction in a substantially n-type ZnSe compound semiconductor crystal grown by relying on a liquid growth method using temperature difference technique, by diffusing therein gold which is a p-type impurity or by forming therein a gold alloy in an inert gas atmosphere. This impurity has such a high diffusion velocity as can suppress the vaporization, from ZnSe crystal, of Se atoms having a vaporization speed lower than the diffusion speed of gold, and thus desired pn junction can be formed.

摘要翻译： 通过依靠使用温差技术的液体生长法生长的大致n型ZnSe化合物半导体晶体中的pn结的制造方法，其中通过在其中扩散作为p型杂质的金或通过在其中在其中形成金合金 惰性气体气氛。 这种杂质具有这样高的扩散速度，可以抑制蒸发速度低于金的扩散速度的Se原子从ZnSe晶体蒸发，因此可以形成所需的pn结。

公开(公告)号：US4354140A

公开(公告)日：1982-10-12

申请号：US154057

申请日：1980-05-28

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L33/00

CPC分类号： H01L33/0008 ,  H01L33/0025

摘要： On a semiconductor substrate of one conductivity type are disposed successively an active semiconductor layer of said one conductivity type, another active semiconductor layer of the other conductivity type and of a low impurity concentration, and a barrier semiconductor layer of the other conductivity type and a high impurity concentration. This another active semiconductor layer constitutes a main radiative region and light emitting in this radiative region is extracted at the side of the barrier layer.The barrier layer is arranged to form a potential barrier of an appropriate height for those minority carriers in that another active semiconductor layer, and reflects the minority carriers back into the active semiconductor layer.Non-radiative recombination is thereby reduced, and radiative recombination is promoted. Thus, the light-emitting efficiency is improved.

摘要翻译： 在一种导电类型的半导体衬底上依次设置有一种导电类型的有源半导体层，另一种导电类型的另一种有源半导体层和低杂质浓度的半导体层，以及另一种导电类型的高阻隔半导体层 杂质浓度。 该另一有源半导体层构成主辐射区域，并且在该辐射区域中发射的光在该阻挡层侧被提取。 阻挡层被布置成在该另一有源半导体层中为这些少数载流子形成适当高度的势垒，并将少数载流子反射回有源半导体层。 从而减少非辐射复合，促进辐射复合。 因此，发光效率提高。

公开(公告)号：US4347097A

公开(公告)日：1982-08-31

申请号：US177864

申请日：1980-08-14

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： C30B19/00 ,  C30B19/02 ,  C30B19/06 ,  H01L21/208 ,  H01L33/30

CPC分类号： C30B19/063

摘要： A method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a substrate without requiring, for each deposition, any steps of cooling and re-heating a boat provided with a plurality of wells each containing a solution therein. An upper portion of each well is maintained at a predetermined temperature higher than that of a lower portion of the well which communicates with the upper portion so as to establish a constant temperature difference between the upper portion and the lower portion during the deposition of the epitaxial layers. A semiconductive solute material is soaked in the solution contained in the well to maintain the solution at a saturated concentration in the upper portion of the well and at a supersaturated concentration in the lower portion thereof. Movable slider means carrying thereon a plurality of substrates is successively moved to establish abutment of the lower portion of the well and either any one of the substrates arriving at the delivery end of the lower portion of the well for the deposition of the contents of the well onto the substrate to form an epitaxial layer thereon. Apparatus for practicing the method stated above is also disclosed.

摘要翻译： 一种用于执行相继的大量生产相同的半导体器件的方法，每个半导体器件具有由连续沉积在衬底上的多个外延层组成的多层结构，而不需要为每次沉积提供冷却和重新加热设置有 多个孔各自含有溶液。 每个孔的上部保持在比与上部连通的阱的下部高的预定温度，以便在沉积外延期间在上部和下部之间建立恒定的温差 层。 将半导体溶质材料浸入包含在阱中的溶液中，以使溶液在阱的上部保持饱和浓度，并在其下部保持过饱和浓度。 在其上承载多个基板的可移动滑块装置被连续地移动以建立井的下部和到达井的下部的输送端的任何一个基板之间的邻接，用于沉积井的内容物 到衬底上以在其上形成外延层。 还公开了用于实施上述方法的装置。

公开(公告)号：US4338618A

公开(公告)日：1982-07-06

申请号：US90496

申请日：1979-11-01

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L29/80 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/02 ,  H01L27/06 ,  H01L27/07 ,  H01L27/098 ,  H01L29/73 ,  H01L29/739 ,  H03K19/091 ,  H03K19/094

CPC分类号： H01L27/0722 ,  H01L27/0225 ,  H01L27/098 ,  H01L29/739 ,  H03K19/091

摘要： A composite junction-gate static induction transistor comprising a main static induction transistor (SIT) having a source, a gate and a drain, and an auxiliary static induction transistor having an auxiliary source connected to the source of the main SIT, an auxiliary gate connected to the gate of same SIT and an auxiliary drain connected to the auxiliary gate. An input signal current is applied to the composite gate and charges it up to a certain level, and thereafter it may flow through the auxiliary static induction transistor. Therefore, minority carrier storage in the junction-gate static induction transistor can be greatly reduced.

摘要翻译： 一种复合结栅静态感应晶体管，包括具有源极，栅极和漏极的主静态感应晶体管（SIT）以及辅助源极连接到主SIT的源极的辅助静态感应晶体管，辅助栅极连接 连接到辅助门的相同SIT的栅极和辅助漏极。 输入信号电流施加到复合栅极并将其充电到一定水平，此后可以流过辅助静态感应晶体管。 因此，可以大大减少结栅静态感应晶体管中的少数载流子存储。

公开(公告)号：US4337473A

公开(公告)日：1982-06-29

申请号：US817052

申请日：1977-07-19

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L29/10 ,  H01L29/772 ,  H01L29/80

CPC分类号： H01L29/7722 ,  H01L29/1066

摘要： A field effect transistor has the property that the product of its series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of the transistor, the series resistance being the sum of the resistance from source to channel and the resistance of this channel. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in response to a small increase in the reverse gate voltage applied. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.

摘要翻译： 场效应晶体管具有在晶体管的工作状态下，其串联电阻与其真正跨导的乘积在整个漏极电压范围内小于1的特性，串联电阻是源极与沟道之间的电阻之和 和这个渠道的阻力。 为了防止通道的有效电阻的过度增加，使沟道的杂质浓度低至1015原子/ cm3，优选小于1014原子/ cm3，从而从 栅极响应于施加的反向栅极电压的小的增加而广泛地生长以变得连续。 结果，本发明的场效晶体管具有不饱和漏极电流对漏极电压特性。

公开(公告)号：US4331737A

公开(公告)日：1982-05-25

申请号：US215442

申请日：1980-12-11

申请人： Jun-ichi Nishizawa ,  Ikuo Shiota

发明人： Jun-ichi Nishizawa ,  Ikuo Shiota

IPC分类号： C23C14/06 ,  C23C16/30 ,  H01L21/28 ,  H01L21/314 ,  H01L29/51 ,  H01L29/94 ,  B32B15/04 ,  H01L3/00

CPC分类号： H01L29/513 ,  C23C14/0676 ,  C23C16/308 ,  H01L21/28264 ,  H01L21/3145 ,  H01L29/517 ,  H01L29/518 ,  H01L29/94 ,  Y10S438/958 ,  Y10T428/31678

摘要： The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

摘要翻译： 根据本发明的氧氮化物膜含有Ga和/或Al，并且O / N比至少为0.15。 通过依靠例如化学气相沉积技术获得该膜。 膜中的O / N比可以通过例如改变衬底和物质供应源之间的距离，或者改变载气中所含的氧化气体的比例来改变。 该膜既可用作III-V化合物半导体如GaAs的表面钝化膜，也可用作IG-FET的有源表面部分的绝缘膜或光学抗反射膜。