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    Write verify method for resistive random access memory
    81.
    发明授权
    Write verify method for resistive random access memory 失效
    电阻随机存取存储器的写验证方法

    公开(公告)号：US08599600B2

    公开(公告)日：2013-12-03

    申请号：US13278249

    申请日：2011-10-21

    Applicant: Haiwen Xi ,  Song S. Xue

    Inventor： Haiwen Xi ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: G11C13/0069 ,  G11C11/5664 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0064 ,  G11C2013/0073 ,  G11C2211/5621 ,  G11C2213/31 ,  G11C2213/32

    Abstract: Write verify methods for resistance random access memory (RRAM) are provided. The methods include applying a reset operation voltage pulse across a RRAM cell to change a resistance of the RRAM cell from a low resistance state to a high resistance state and applying a forward resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance value less than a selected lower resistance limit value. The method also includes applying a reverse resetting voltage pulse across the RRAM cell if the RRAM cell has a high resistance state resistance values is greater than a selected upper resistance limit value. The reverse resetting voltage pulse has a second polarity being opposite the first polarity.

    Abstract translation: 提供了电阻随机存取存储器（RRAM）的写验证方法。 所述方法包括在RRAM单元之间施加复位操作电压脉冲以将RRAM单元的电阻从低电阻状态改变为高电阻状态，并且如果RRAM单元具有高电阻则在RRAM单元之间施加正向复位电压脉冲 状态电阻值小于选定的下限电阻值。 该方法还包括如果RRAM单元具有大于所选上限电阻值的高电阻状态电阻值，则跨越RRAM单元施加反向复位电压脉冲。 反向复位电压脉冲具有与第一极性相反的第二极性。

    STRAM with compensation element and method of making the same
    82.
    发明授权
    STRAM with compensation element and method of making the same 失效
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08508005B2

    公开(公告)日：2013-08-13

    申请号：US13477200

    申请日：2012-05-22

    Applicant: Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC: H01L21/66 ,  G01R33/02 ,  G01C11/14

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    Thermally assisted multi-bit MRAM
    83.
    发明授权
    Thermally assisted multi-bit MRAM 有权
    热辅助多位MRAM

    公开(公告)号：US08462543B2

    公开(公告)日：2013-06-11

    申请号：US13474838

    申请日：2012-05-18

    Applicant: Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

    Inventor： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Haiwen Xi

    IPC: G11C11/02

    CPC classification number: G11C11/15 ,  G11C11/1675 ,  G11C11/5607

    Abstract: Methods of writing to a multi-bit MRAM memory unit are described. The method includes to self-detected writing to a multi-bit (i.e., multilevel) thermally assisted MRAM. The self-detected writing increases a reading margin between data state levels and decreases reading margin variability due to cell resistance variation.

    Abstract translation: 描述写入多位MRAM存储器单元的方法。 该方法包括对多位（即多级）热辅助MRAM进行自检测写入。 自检的写入会增加数据状态级之间的读取余量，并降低由于单元格电阻变化而导致的读取边缘变化。

    Memory with separate read and write paths
    84.
    发明授权
    Memory with separate read and write paths 有权
    内存具有单独的读写路径

    公开(公告)号：US08400823B2

    公开(公告)日：2013-03-19

    申请号：US12774016

    申请日：2010-05-05

    Applicant: Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    Inventor： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC: G11C11/00

    CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switch the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    Abstract translation: 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。 写入电流通过巨磁电阻单元，以将巨磁阻单元切换到高电阻状态和低电阻状态之间。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    88.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20120248558A1

    公开(公告)日：2012-10-04

    申请号：US13477200

    申请日：2012-05-22

    Applicant: Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    Inventor： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC: H01L29/82

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    Abstract translation: 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    Domain wall movement on magnetic strip tracks
    89.
    发明授权
    Domain wall movement on magnetic strip tracks 有权
    磁条轨道上的畴壁运动

    公开(公告)号：US08270204B2

    公开(公告)日：2012-09-18

    申请号：US12500263

    申请日：2009-07-09

    Applicant: Xiaobin Wang ,  Haiwen Xi ,  Yiran Chen ,  Yuan Yan ,  Jun Zheng

    Inventor： Xiaobin Wang ,  Haiwen Xi ,  Yiran Chen ,  Yuan Yan ,  Jun Zheng

    IPC: G11C11/00

    CPC classification number: G01R33/1284 ,  G01R33/1207 ,  G01R33/1292 ,  G11C19/0816

    Abstract: Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.

    Abstract translation: 磁性移动轨迹或磁条，旋转磁场的应用或通过带自身的旋转可以准确地确定畴壁运动。 一个具体实施例是确定磁条中的畴壁的位置的方法。 该方法包括对磁条施加旋转磁场，围绕磁条的纵向轴线旋转的磁场，以及在施加磁场之后，确定畴壁向第二位置的位移。

    Magnetic field assisted STRAM cells
    90.
    发明授权
    Magnetic field assisted STRAM cells 有权
    磁场辅助STRAM细胞

    公开(公告)号：US08223532B2

    公开(公告)日：2012-07-17

    申请号：US12199126

    申请日：2008-08-27

    Applicant: Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    Inventor： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

    IPC: G11C11/00

    CPC classification number: G11C11/1675 ,  G11C11/1659

    Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

    Abstract translation: 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

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