公开(公告)号：US09067816B2

公开(公告)日：2015-06-30

申请号：US13683555

申请日：2012-11-21

申请人： Draka Comteq, B.V.

发明人： Igor Milicevic ,  Mattheus Jacobus Nicolaas van Stralen ,  Johannes Antoon Hartsuiker

IPC分类号： C03B19/14 ,  C03B37/014 ,  C03B37/018 ,  C23C16/04 ,  C23C16/455 ,  C23C16/511

CPC分类号： C03B37/01413 ,  C03B19/143 ,  C03B37/0183 ,  C23C16/045 ,  C23C16/45523 ,  C23C16/511

摘要： The disclosed Plasma Chemical Vapor Deposition (PCVD) process uses the injection of plasma-reactive gas to control deposition oscillation and refractive-index oscillation (e.g., alpha oscillation). This PCVD process, which may employ a modified PCVD apparatus, achieves more uniform glass deposition. This, in turn, results in optical preforms and optical fibers having more uniform optical properties.

摘要翻译： 所公开的等离子体化学气相沉积（PCVD）方法使用等离子体反应气体的注入来控制沉积振荡和折射率振荡（例如，α振荡）。 可以使用改进的PCVD装置的PCVD工艺实现更均匀的玻璃沉积。 这又导致具有更均匀的光学性质的光学预型件和光纤。

公开(公告)号：US09064684B1

公开(公告)日：2015-06-23

申请号：US13607511

申请日：2012-09-07

申请人： Collin K. L. Mui ,  Lakshminarayana Nittala ,  Nerissa Draeger

发明人： Collin K. L. Mui ,  Lakshminarayana Nittala ,  Nerissa Draeger

IPC分类号： B05C11/00 ,  H01L21/00 ,  H01L21/02 ,  B05C1/00

CPC分类号： H01L21/00 ,  B05C1/00 ,  B05C11/00 ,  C23C16/44 ,  C23C16/45523 ,  H01L21/02107 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02345

摘要： Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.

摘要翻译： 提供了用电介质材料在部分制造的半导体衬底上填充间隙的方法和装置。 在某些实施方案中，所述方法包括将第一工艺气体引入处理室并将第二工艺气体积聚在保持在基本上高于处理室压力水平的压力水平的蓄能器中。 然后将第二工艺气体从蓄能器快速地引入到处理室中。 在引入第二处理气体期间，可以在处理室中设置过量的第二处理气体。 可流动的含硅膜在基材的表面上形成以至少部分地填充间隙。

公开(公告)号：US09062376B1

公开(公告)日：2015-06-23

申请号：US14502044

申请日：2014-09-30

申请人： Hitachi Kokusai Electric Inc.

发明人： Shuhei Saido

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/46 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45582 ,  C23C16/4586 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02263 ,  H01L21/28512 ,  H01L21/76877

摘要： A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.

摘要翻译： 提供一种能够抑制即使使用缓冲空间的单晶片装置的缓冲空间中的副产物的产生的基板处理装置，也可以提供半导体装置的制造方法。 基板处理装置包括处理室，该处理室包括具有放置基板的放置面的放置单元，具有缓冲室的喷淋头，安装在处理室的上游侧，气体供给系统配置为交替地供给至少两个 通过喷淋头的缓冲室将气体进入处理室，以及加热单元，其构造成将缓冲室加热到第一温度，并将处理室加热到高于第一温度的第二温度，而至少两个 气体类型通过供气系统供应。

公开(公告)号：US09054046B2

公开(公告)日：2015-06-09

申请号：US13708966

申请日：2012-12-08

申请人： Hitachi Kokusai Electric Inc.

发明人： Yoshiro Hirose ,  Atsushi Sano ,  Yugo Orihashi ,  Yoshitomo Hashimoto ,  Satoshi Shimamoto

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/36 ,  C23C16/455

CPC分类号： H01L21/02126 ,  C23C16/36 ,  C23C16/45523 ,  H01L21/02167 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31

摘要： A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.

摘要翻译： 要形成具有低介电常数，高耐腐蚀性和高耐漏性等特性的薄膜。 一种制造半导体器件的方法包括：通过执行预定次数的循环，在衬底上形成含有预定元素的薄膜，该循环包括：通过交替地提供含有预定元素，氮和碳的第一层， 含有预定元素的源气体和卤素元素提供给基底并提供含有三种元素的第一反应气体，所述三种元素包括碳，氮和氢，并且具有其中多个碳原子数大于氮原子的基团的组成 预定次数; 以及通过将不同于所述源气体和所述第一反应气体的第二反应气体供应到所述衬底来形成第二层，以修饰所述第一层。

公开(公告)号：US20150152554A1

公开(公告)日：2015-06-04

申请号：US14502044

申请日：2014-09-30

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Shuhei SAIDO

IPC分类号： C23C16/46 ,  C23C16/455 ,  H01L21/02 ,  C23C16/458

CPC分类号： C23C16/46 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45582 ,  C23C16/4586 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02263 ,  H01L21/28512 ,  H01L21/76877

摘要： A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.

摘要翻译： 提供一种能够抑制即使使用缓冲空间的单晶片装置的缓冲空间中的副产物的产生的基板处理装置，也可以提供半导体装置的制造方法。 基板处理装置包括处理室，该处理室包括具有放置基板的放置面的放置单元，具有缓冲室的喷淋头，安装在处理室的上游侧，气体供给系统配置为交替地供给至少两个 通过喷淋头的缓冲室将气体进入处理室，以及加热单元，其构造成将缓冲室加热到第一温度，并将处理室加热到高于第一温度的第二温度，而至少两个 气体类型通过供气系统供应。

公开(公告)号：US20150147844A1

公开(公告)日：2015-05-28

申请号：US14185427

申请日：2014-02-20

申请人： SK HYNIX INC.

发明人： Young Seok KWON ,  Kwon HONG

IPC分类号： H01L45/00

CPC分类号： H01L45/1616 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.

摘要翻译： 一种制造半导体器件的方法包括：将包含锗（Ge）前体的第一源气体在第一时间段内提供到半导体衬底上，并且周期性地中断第一时间段内的第一源气体的供应以形成Ge元素 半导体衬底。

公开(公告)号：US20150126021A1

公开(公告)日：2015-05-07

申请号：US14597372

申请日：2015-01-15

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yasunobu KOSHI ,  Keigo NISHIDA ,  Kiyohiko MAEDA

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/02592 ,  C23C16/0236 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

摘要： A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

摘要翻译： 通过执行至少两次的循环在基板上形成膜，该循环包括用于在基板上形成核的核形成工艺和用于抑制核的生长的核生长抑制过程。 核生长抑制过程所需的时间小于或等于核形成过程所需的时间。 或者，在循环重复执行多次之后进一步进行核形成处理。

公开(公告)号：US09018093B2

公开(公告)日：2015-04-28

申请号：US13749878

申请日：2013-01-25

申请人： ASM IP Holding B.V.

发明人： Naoto Tsuji ,  Fumitaka Shoji

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/3213 ,  C23C16/30 ,  C23C16/455

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32055 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/76832

摘要： A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer.

摘要翻译： 用于形成由重复堆叠层构成的层的方法包括：在不同沉积条件下在衬底上形成第一层和第二层以形成堆叠层，其中第一层和第二层的膜应力是拉伸的或压缩的和相反的 并且第一和第二层的湿蚀刻速率彼此至少是50次不同; 并重复上述步骤以形成由重复堆叠层构成的层，其中用于形成至少一层叠层的沉积条件与用于形成另一层叠层的沉积条件不同。

公开(公告)号：US20150104954A1

公开(公告)日：2015-04-16

申请号：US14515341

申请日：2014-10-15

申请人： ASM IP HOLDING B.V.

发明人： Viljami Pore

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02112 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

摘要： Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

摘要翻译： 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在小于约400℃的温度下在基材上分解。在一些实施方案中，提供了沉积包含B和C的氮化硅膜的方法。 可以通过包括形成SiN的ALD循环和对生长膜贡献B和C的CVD循环的沉积工艺来沉积氮化硅膜。

公开(公告)号：US20150104575A1

公开(公告)日：2015-04-16

申请号：US14515135

申请日：2014-10-15

申请人： The Board of Trustees of the University of Illinois

发明人： Christos G. Takoudis ,  Manish Singh ,  Sathees Kannan Selvaraj

IPC分类号： C23C16/52 ,  C23C16/40

CPC分类号： C23C16/52 ,  C23C16/406 ,  C23C16/45523 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45561

摘要： A deposition system can conduct ALD or CVD deposition and can switch between the deposition modes. The system is capable of depositing multi-metal films and multi-layer films of alternating ALD and CVD films. Reactant supplies can be bypassed with carrier gas flow to maintain pressure in a reactor and in reactor supply lines and purge reactants.

摘要翻译： 沉积系统可以进行ALD或CVD沉积并且可以在沉积模式之间切换。 该系统能够沉积交替ALD和CVD膜的多金属膜和多层膜。 反应物供应可以通过载气流旁路，以保持反应堆和反应堆供应管线和清洗反应物中的压力。