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    Method for producing solid electrolyte structure with porous portion and dense portion
    73.
    发明授权
    Method for producing solid electrolyte structure with porous portion and dense portion 失效
    用多孔部分和致密部分制造固体电解质结构的方法

    公开(公告)号：US08309257B2

    公开(公告)日：2012-11-13

    申请号：US12399209

    申请日：2009-03-06

    Applicant: Kiyoshi Kanamura ,  Masanori Hara ,  Sayaka Okuda ,  Kazuhiro Yamamoto ,  Yosuke Sato

    Inventor： Kiyoshi Kanamura ,  Masanori Hara ,  Sayaka Okuda ,  Kazuhiro Yamamoto ,  Yosuke Sato

    IPC: H01M6/14

    CPC classification number: H01M10/0562 ,  B32B18/00 ,  C04B35/447 ,  C04B35/462 ,  C04B2235/3203 ,  C04B2235/3217 ,  C04B2235/3227 ,  C04B2235/3232 ,  C04B2235/3287 ,  C04B2237/34 ,  C04B2237/586 ,  H01M4/0471 ,  Y10T29/49108

    Abstract: A first fine particle-containing solution is deposited on an appropriate substrate, and dried to form a first fine particle aggregate layer. Polymer particles are deposited on the first fine particle aggregate layer, and are supplied with a second fine particle-containing solution such that the polymer particles are immersed in the second fine particle-containing solution. The second fine particle-containing solution is dried to form a second fine particle aggregate layer containing a large number of the polymer particles embedded. A first structure precursor is completed at this stage. Then, the first structure precursor is separated from the substrate, and thermally treated. Thus, the production of a first solid electrolyte structure, which has a porous solid electrolyte portion and a dense solid electrolyte portion integrated, is completed.

    Abstract translation: 将第一含细颗粒的溶液沉积在适当的基材上，并干燥以形成第一细颗粒聚集体层。 将聚合物颗粒沉积在第一细颗粒聚集体层上，并且供给第二细颗粒溶液，使得聚合物颗粒浸入第二细颗粒溶液中。 将第二细颗粒溶液干燥以形成包含大量嵌入聚合物颗粒的第二细颗粒聚集体层。 第一结构前体在此阶段完成。 然后，将第一结构前体与基板分离，并进行热处理。 因此，完成了具有多孔固体电解质部分和集成的致密固体电解质部分的第一固体电解质结构的生产。

    Multilayer positive temperature coefficient thermistor
    76.
    发明授权
    Multilayer positive temperature coefficient thermistor 有权
    多层正温度系数热敏电阻

    公开(公告)号：US07830240B2

    公开(公告)日：2010-11-09

    申请号：US12562969

    申请日：2009-09-18

    Applicant: Kenjirou Mihara ,  Atsushi Kishimoto

    Inventor： Kenjirou Mihara ,  Atsushi Kishimoto

    IPC: H01C7/10

    CPC classification number: H01C7/025 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2237/346 ,  C04B2237/586 ,  H01C7/021 ,  H01C7/18

    Abstract: A multilayer positive temperature coefficient thermistor includes a ceramic body having semiconductor ceramic layers and internal electrodes, the semiconductor ceramic layers being mainly composed of BaTiO3 and containing semiconductor-forming agents, the semiconductor ceramic layers and the internal electrodes being alternately stacked, and the outermost layers of the ceramic body being formed of the semiconductor ceramic layers. The outermost layers serve as protective layers. The semiconductor ceramic layers arranged between the internal electrodes 4a and 4d serve as effective layers. The protective layers contain a semiconductor-forming agent having a larger ionic radius than that of a semiconductor-forming agent contained in the effective layers. The protective layers have a lower porosity than that of the effective layers.

    Abstract translation: 多层正温度系数热敏电阻包括具有半导体陶瓷层和内部电极的陶瓷体，半导体陶瓷层主要由BaTiO 3构成并含有半导体形成剂，半导体陶瓷层和内部电极交替堆叠，最外层 的陶瓷体由半导体陶瓷层形成。 最外层用作保护层。 布置在内部电极4a和4d之间的半导体陶瓷层用作有效层。 保护层含有比有效层中所含的半导体形成剂的离子半径大的离子半径的半导体形成剂。 保护层的孔隙率低于有效层的孔隙率。

    MULTILAYER POSITIVE TEMPERATURE COEFFICIENT THERMISTOR
    77.
    发明申请
    MULTILAYER POSITIVE TEMPERATURE COEFFICIENT THERMISTOR 有权
    多层阳极温系数热敏电阻

    公开(公告)号：US20100001828A1

    公开(公告)日：2010-01-07

    申请号：US12562969

    申请日：2009-09-18

    Applicant: Kenjirou Mihara ,  Atsushi Kishimoto

    Inventor： Kenjirou Mihara ,  Atsushi Kishimoto

    IPC: H01C7/02

    CPC classification number: H01C7/025 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2237/346 ,  C04B2237/586 ,  H01C7/021 ,  H01C7/18

    Abstract: A multilayer positive temperature coefficient thermistor includes a ceramic body having semiconductor ceramic layers and internal electrodes, the semiconductor ceramic layers being mainly composed of BaTiO3 and containing semiconductor-forming agents, the semiconductor ceramic layers and the internal electrodes being alternately stacked, and the outermost layers of the ceramic body being formed of the semiconductor ceramic layers. The outermost layers serve as protective layers. The semiconductor ceramic layers arranged between the internal electrodes 4a and 4d serve as effective layers. The protective layers contain a semiconductor-forming agent having a larger ionic radius than that of a semiconductor-forming agent contained in the effective layers. The protective layers have a lower porosity than that of the effective layers. Preferably, glass films are formed in pores in surfaces of the protective layers, and the protective layers have a porosity of 10% or less. In this case, it is possible to produce a multilayer positive temperature coefficient thermistor that effectively prevents the penetration of flux into the semiconductor ceramic layers and ensures a desired rate of resistance change without delamination.

    Abstract translation: 多层正温度系数热敏电阻包括具有半导体陶瓷层和内部电极的陶瓷体，半导体陶瓷层主要由BaTiO 3构成并含有半导体形成剂，半导体陶瓷层和内部电极交替堆叠，最外层 的陶瓷体由半导体陶瓷层形成。 最外层用作保护层。 布置在内部电极4a和4d之间的半导体陶瓷层用作有效层。 保护层含有比有效层中所含的半导体形成剂的离子半径大的离子半径的半导体形成剂。 保护层的孔隙率低于有效层的孔隙率。 优选地，在保护层的表面的孔中形成玻璃膜，并且保护层的孔隙率为10％以下。 在这种情况下，可以制造有效地防止焊剂渗透到半导体陶瓷层中的多层正温度系数热敏电阻，并且确保期望的电阻变化率而不发生分层。

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