公开(公告)号：US20080204186A1

公开(公告)日：2008-08-28

申请号：US12049671

申请日：2008-03-17

Applicant: Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

Inventor： Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

IPC: H01C7/02

CPC classification number: H01C7/021 ,  H01C7/025 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor that has a BaTiO3-based ceramic material contained as a primary component in semiconductor ceramic layers, the ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006, and at least one element selected from the group consisting of La, Ce, Pr, Nd, and Pm is contained as a semiconductor dopant. In this multilayer positive temperature coefficient thermistor, a thickness d of internal electrodes layer and a thickness D of the semiconductor ceramic layers satisfy d≧0.6 μm and d/D

Abstract translation: 在半导体陶瓷层中含有作为主要成分的BaTiO 3 3系陶瓷材料的多层正温度系数热敏电阻，Ba部位与Ti部位的比例为0.998〜1.006 并且包含选自La，Ce，Pr，Nd和Pm中的至少一种元素作为半导体掺杂剂。 在该多层正温度系数热敏电阻中，内部电极层的厚度d和半导体陶瓷层的厚度D满足d> =0.6μm，d / D <0.2。 因此，即使半导体陶瓷层的烧结密度低，实际测定的烧结密度为理论烧结密度的65％〜90％，则室温下时间变化率低的多层正温度系数热敏电阻 可以在不进行任何复杂的工艺如热处理的情况下获得电阻。 当半导体掺杂剂的含量相对于100摩尔份的Ti为0.1〜0.5摩尔份数时，可以实现1150℃的低温烧成，耐室温性和耐高温性 可以改变。

公开(公告)号：US06984543B2

公开(公告)日：2006-01-10

申请号：US10639483

申请日：2003-08-13

Applicant: Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

Inventor： Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

IPC: H01L21/00

CPC classification number: C04B35/4682 ,  C04B2235/3224 ,  C04B2235/6025 ,  H01C7/021 ,  H01C17/006 ,  H01C17/281

Abstract: A method of producing a laminated PTC thermistor involves alternately laminating electroconductive pastes to form internal electrodes and ceramic green sheets to form semiconductor ceramic layers with a positive resistance-temperature characteristic to form a laminate, firing the laminate to form a ceramic piece, and forming external electrodes on both of the end-faces of the ceramic piece, and heat-treating the ceramic piece having the external electrodes formed thereon at a temperature between about 60° C. and 200° C.

Abstract translation: 层压PTC热敏电阻的制造方法包括交替层叠导电性糊料以形成内部电极和陶瓷生片，以形成具有正电阻温度特性的半导体陶瓷层，以形成层压体，焙烧该层压体以形成陶瓷件，并形成外部 在陶瓷片的两个端面上的电极，并在其上形成有外部电极的陶瓷片在约60℃至200℃之间的温度下进行热处理。

公开(公告)号：US07679485B2

公开(公告)日：2010-03-16

申请号：US12050413

申请日：2008-03-18

Applicant: Atsushi Kishimoto ,  Kenjirou Mihara ,  Hideaki Niimi

Inventor： Atsushi Kishimoto ,  Kenjirou Mihara ,  Hideaki Niimi

IPC: H01C7/10

CPC classification number: H01C7/021 ,  H01C7/025 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor that has semiconductor ceramic layers containing a BaTiO3-based ceramic material as a primary component, and at least one element selected from the group consisting of Eu, Gd, Tb, Dy, Y, Ho, Er, and Tm as a semiconductor dopant in the range of 0.1 to 0.5 molar parts with respect to 100 molar parts of Ti. The ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006. Accordingly, even when the semiconductor ceramic layers have a low actual-measured sintered density in the range of 65% to 90% of a theoretical sintered density, a multilayer positive temperature coefficient thermistor having a sufficiently high rate of resistance change and a high rising coefficient of resistance at the Curie temperature or more can be realized.

Abstract translation: 具有包含BaTiO3系陶瓷材料作为主要成分的半导体陶瓷层和选自Eu，Gd，Tb，Dy，Y，Ho，Er和Tm中的至少一种元素的多层正温度系数热敏电阻 作为相对于100摩尔份Ti为0.1〜0.5摩尔份的半导体掺杂剂。 Ba位点与Ti部位的比例在0.998〜1.006的范围内。 因此，即使半导体陶瓷层的实测烧结密度低于理论烧结密度的65％〜90％的范围，具有足够高的电阻变化率和高上升系数的多层正温度系数热敏电阻 可以实现居里温度以上的电阻。

公开(公告)号：US07830240B2

公开(公告)日：2010-11-09

申请号：US12562969

申请日：2009-09-18

Applicant: Kenjirou Mihara ,  Atsushi Kishimoto

Inventor： Kenjirou Mihara ,  Atsushi Kishimoto

IPC: H01C7/10

CPC classification number: H01C7/025 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2237/346 ,  C04B2237/586 ,  H01C7/021 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor includes a ceramic body having semiconductor ceramic layers and internal electrodes, the semiconductor ceramic layers being mainly composed of BaTiO3 and containing semiconductor-forming agents, the semiconductor ceramic layers and the internal electrodes being alternately stacked, and the outermost layers of the ceramic body being formed of the semiconductor ceramic layers. The outermost layers serve as protective layers. The semiconductor ceramic layers arranged between the internal electrodes 4a and 4d serve as effective layers. The protective layers contain a semiconductor-forming agent having a larger ionic radius than that of a semiconductor-forming agent contained in the effective layers. The protective layers have a lower porosity than that of the effective layers.

Abstract translation: 多层正温度系数热敏电阻包括具有半导体陶瓷层和内部电极的陶瓷体，半导体陶瓷层主要由BaTiO 3构成并含有半导体形成剂，半导体陶瓷层和内部电极交替堆叠，最外层 的陶瓷体由半导体陶瓷层形成。 最外层用作保护层。 布置在内部电极4a和4d之间的半导体陶瓷层用作有效层。 保护层含有比有效层中所含的半导体形成剂的离子半径大的离子半径的半导体形成剂。 保护层的孔隙率低于有效层的孔隙率。

公开(公告)号：US07649437B2

公开(公告)日：2010-01-19

申请号：US12049671

申请日：2008-03-17

Applicant: Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

Inventor： Kenjirou Mihara ,  Atsushi Kishimoto ,  Hideaki Niimi

IPC: H01C7/10

CPC classification number: H01C7/021 ,  H01C7/025 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor that has a BaTiO3-based ceramic material contained as a primary component in semiconductor ceramic layers, the ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006, and at least one element selected from the group consisting of La, Ce, Pr, Nd, and Pm is contained as a semiconductor dopant. In this multilayer positive temperature coefficient thermistor, a thickness d of internal electrodes layer and a thickness D of the semiconductor ceramic layers satisfy d≧0.6 μm and d/D

Abstract translation: 在半导体陶瓷层中含有作为主要成分的BaTiO3系陶瓷材料的多层正温度系数热敏电阻，Ba部位与Ti部位的比例在0.998〜1.006的范围内， 包含La，Ce，Pr，Nd和Pm的组合作为半导体掺杂剂。 在该多层正温度系数热敏电阻中，内部电极层的厚度d和半导体陶瓷层的厚度D满足d> =0.6μm，d / D <0.2。 因此，即使半导体陶瓷层的烧结密度低，实际测定的烧结密度为理论烧结密度的65％〜90％，则室温下时间变化率低的多层正温度系数热敏电阻 可以在不进行任何复杂的工艺如热处理的情况下获得电阻。 当半导体掺杂剂的含量相对于100摩尔份的Ti为0.1〜0.5摩尔份数时，可以实现1150℃的低温烧成，耐室温性和耐高温性 可以改变。

公开(公告)号：US20100001828A1

公开(公告)日：2010-01-07

申请号：US12562969

申请日：2009-09-18

Applicant: Kenjirou Mihara ,  Atsushi Kishimoto

Inventor： Kenjirou Mihara ,  Atsushi Kishimoto

IPC: H01C7/02

CPC classification number: H01C7/025 ,  B32B18/00 ,  C04B35/4682 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2237/346 ,  C04B2237/586 ,  H01C7/021 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor includes a ceramic body having semiconductor ceramic layers and internal electrodes, the semiconductor ceramic layers being mainly composed of BaTiO3 and containing semiconductor-forming agents, the semiconductor ceramic layers and the internal electrodes being alternately stacked, and the outermost layers of the ceramic body being formed of the semiconductor ceramic layers. The outermost layers serve as protective layers. The semiconductor ceramic layers arranged between the internal electrodes 4a and 4d serve as effective layers. The protective layers contain a semiconductor-forming agent having a larger ionic radius than that of a semiconductor-forming agent contained in the effective layers. The protective layers have a lower porosity than that of the effective layers. Preferably, glass films are formed in pores in surfaces of the protective layers, and the protective layers have a porosity of 10% or less. In this case, it is possible to produce a multilayer positive temperature coefficient thermistor that effectively prevents the penetration of flux into the semiconductor ceramic layers and ensures a desired rate of resistance change without delamination.

Abstract translation: 多层正温度系数热敏电阻包括具有半导体陶瓷层和内部电极的陶瓷体，半导体陶瓷层主要由BaTiO 3构成并含有半导体形成剂，半导体陶瓷层和内部电极交替堆叠，最外层 的陶瓷体由半导体陶瓷层形成。 最外层用作保护层。 布置在内部电极4a和4d之间的半导体陶瓷层用作有效层。 保护层含有比有效层中所含的半导体形成剂的离子半径大的离子半径的半导体形成剂。 保护层的孔隙率低于有效层的孔隙率。 优选地，在保护层的表面的孔中形成玻璃膜，并且保护层的孔隙率为10％以下。 在这种情况下，可以制造有效地防止焊剂渗透到半导体陶瓷层中的多层正温度系数热敏电阻，并且确保期望的电阻变化率而不发生分层。

公开(公告)号：US20080204187A1

公开(公告)日：2008-08-28

申请号：US12050413

申请日：2008-03-18

Applicant: Atsushi Kishimoto ,  Kenjirou Mihara ,  Hideaki Niimi

Inventor： Atsushi Kishimoto ,  Kenjirou Mihara ,  Hideaki Niimi

IPC: H01C7/02

CPC classification number: H01C7/021 ,  H01C7/025 ,  H01C7/18

Abstract: A multilayer positive temperature coefficient thermistor that has semiconductor ceramic layers containing a BaTiO3-based ceramic material as a primary component, and at least one element selected from the group consisting of Eu, Gd, Tb, Dy, Y, Ho, Er, and Tm as a semiconductor dopant in the range of 0.1 to 0.5 molar parts with respect to 100 molar parts of Ti. The ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006. Accordingly, even when the semiconductor ceramic layers have a low actual-measured sintered density in the range of 65% to 90 % of a theoretical sintered density, a multilayer positive temperature coefficient thermistor having a sufficiently high rate of resistance change and a high rising coefficient of resistance at the Curie temperature or more can be realized.

Abstract translation: 一种多层正温度系数热敏电阻，其具有含有以BaTiO 3 3系陶瓷材料为主要成分的半导体陶瓷层，以及选自由Eu，Gd，Tb，Dy， Y，Ho，Er和Tm作为半导体掺杂剂，相对于100摩尔份的Ti为0.1〜0.5摩尔份。 Ba位点与Ti部位的比例在0.998〜1.006的范围内。 因此，即使半导体陶瓷层的实测烧结密度低于理论烧结密度的65％〜90％的范围，具有足够高的电阻变化率和高上升系数的多层正温度系数热敏电阻 可以实现居里温度以上的电阻。

公开(公告)号：US08390421B2

公开(公告)日：2013-03-05

申请号：US13326706

申请日：2011-12-15

Applicant: Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

Inventor： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

IPC: H01C7/10

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

Abstract: A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

Abstract translation: 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。

公开(公告)号：US08289125B2

公开(公告)日：2012-10-16

申请号：US13111194

申请日：2011-05-19

Applicant: Atsushi Kishimoto ,  Hayato Katsu ,  Masato Goto ,  Naoaki Abe ,  Akinori Nakayama

Inventor： Atsushi Kishimoto ,  Hayato Katsu ,  Masato Goto ,  Naoaki Abe ,  Akinori Nakayama

IPC: H01C7/10

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B35/6262 ,  C04B35/62645 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/6584 ,  C04B2235/79 ,  C04B2235/87 ,  Y10T428/256

Abstract: A semiconductor ceramic includes a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula AmBO3. The molar ratio m between the A site and the B site satisfies 1.001≦m≦1.01. Part of Ba constituting the A site is replaced with Bi, Ca, a rare-earth element, and Na. The molar content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.05 to 0.20 (preferably 0.125 to 0.175). A PTC thermistor includes a component body formed of the semiconductor ceramic. Accordingly, there is provided a lead-free semiconductor ceramic that substantially does not contain lead and that has desired PTC characteristics and high reliability.

Abstract translation: 半导体陶瓷包括具有由通式AmBO 3表示的钙钛矿结构的作为主要成分的基于BamTiO 3的组合物。 A位点和B位点之间的摩尔比m满足1.001＆nlE; m＆nlE; 1.01。 构成A位点的Ba的一部分被Bi，Ca，稀土元素和Na代替。 构成A位点的元素的总摩尔数为1摩尔时的摩尔含量为0.05〜0.20（优选为0.125〜0.175）。 PTC热敏电阻包括由半导体陶瓷形成的部件体。 因此，提供了一种基本上不含铅并具有期望的PTC特性和高可靠性的无铅半导体陶瓷。

公开(公告)号：US20110215895A1

公开(公告)日：2011-09-08

申请号：US13111085

申请日：2011-05-19

Applicant: Masato Goto ,  Hayato Katsu ,  Naoaki Abe ,  Atsushi Kishimoto ,  Akinori Nakayama

Inventor： Masato Goto ,  Hayato Katsu ,  Naoaki Abe ,  Atsushi Kishimoto ,  Akinori Nakayama

IPC: H01C7/02 ,  H01B1/02

CPC classification number: C04B35/638 ,  C04B35/4682 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3225 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3281 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/604 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/79 ,  C04B2235/85 ,  C04B2235/9661 ,  H01C7/025 ,  Y10T428/252

Abstract: A semiconductor ceramic includes a BamTiO3-based composition, as a main component, having a perovskite structure represented by general formula AmBO3. Part of Ba constituting an A site is replaced with at least an alkali metal element, Bi, and a rare-earth element, and the molar ratio m between the A site and a B site is 0.990≦m≦0.999 (preferably 0.990≦m≦0.995). Preferably, part of the Ba is replaced with Ca, and the content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.042 to 0.20 (preferably 0.125 to 0.175) on a molar basis. A PTC thermistor includes a component body formed of the semiconductor ceramic. Accordingly, there are provided satisfactory rise characteristics even if an alkali metal element is present.

Abstract translation: 半导体陶瓷包括具有由通式AmBO 3表示的钙钛矿结构的作为主要成分的基于BamTiO 3的组合物。 构成A位置的Ba的一部分被至少一种碱金属元素Bi和稀土元素代替，并且A位点和B位点之间的摩尔比m为0.990＆amp; NlE; m＆nlE; 0.999（优选0.990＆nlE ; m＆nlE; 0.995）。 优选地，将Ba的一部分替换为Ca，当构成A位点的元素的总摩尔数为1摩尔时，Ca的含量为摩尔比为0.042〜0.20（优选为0.125〜0.175）。 PTC热敏电阻包括由半导体陶瓷形成的部件体。 因此，即使存在碱金属元素，也提供令人满意的升高特性。