公开(公告)号：US20120081206A1

公开(公告)日：2012-04-05

申请号：US13326706

申请日：2011-12-15

Applicant: Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

Inventor： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

IPC: H01C7/04 ,  H01B1/00

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

Abstract: A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

Abstract translation: 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。

公开(公告)号：US08390421B2

公开(公告)日：2013-03-05

申请号：US13326706

申请日：2011-12-15

Applicant: Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

Inventor： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

IPC: H01C7/10

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

Abstract: A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

Abstract translation: 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。