公开(公告)号：US09601275B1

公开(公告)日：2017-03-21

申请号：US14925481

申请日：2015-10-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Seok-Hyun Yoon ,  Yun-Jung Park ,  Doo-Young Kim ,  Song-Je Jeon ,  Chang-Hun Kim

IPC: C04B35/468 ,  H01G4/12

CPC classification number: H01G4/1227 ,  C04B35/4682 ,  C04B35/495 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3215 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3268 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/442 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/6582 ,  C04B2235/662 ,  H01C7/025 ,  H01G4/1254 ,  H01G4/30

Abstract: A dielectric ceramic composition includes a main component comprising (1-x)BaTiO3-x(Na1-yKy)NbO3, where 0.005≦x≦0.5 and 0.3≦y≦1.0; a first subcomponent comprising an element selected from the group consisting of Mn, V, Cr, Fe, Ni, Co, Cu and Zn; and a second subcomponent comprising SiO2.

公开(公告)号：US20170040092A1

公开(公告)日：2017-02-09

申请号：US15222050

申请日：2016-07-28

Applicant: TDK CORPORATION

Inventor： Kazutaka FUJITA ,  Kazuhiko ITOH ,  Yoshikazu SHIMURA

IPC: H01C7/02 ,  H01C1/14

CPC classification number: H01C7/027 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/62625 ,  C04B35/6263 ,  C04B35/62645 ,  C04B35/64 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3234 ,  C04B2235/3239 ,  C04B2235/3251 ,  C04B2235/3253 ,  C04B2235/3255 ,  C04B2235/3262 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/602 ,  C04B2235/606 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/658 ,  C04B2235/79 ,  C04B2235/9607 ,  H01C1/1406 ,  H01C7/025

Abstract: A semiconductor ceramic composition including a compound represented by the following general formula (1) as a main component. (BavBixAyREw)m(TiuTMz)O3   (1) (wherein, A represents both elements of Na and K; RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er; and TM is at least one element selected from the group consisting of V, Nb and Ta.) 0.01≦x≦0.15   (2) x≦y≦0.3   (3) 0≦(w+z)≦0.01   (4) v+x+y+w=1   (5) u+z=1   (6) 0.950≦m≦1.050   (7) further, 0.001 mol to 0.055 mol of Ca is included and the ratio of Na/(Na+K) is 0.1 or more and less than 1.

Abstract translation: 此外，含有0.001mol〜0.055mol的Ca，Na /（Na + K）的比例为0.1以上且小于1。

公开(公告)号：US20150371742A1

公开(公告)日：2015-12-24

申请号：US14762078

申请日：2014-01-24

Applicant: BYD COMPANY LIMITED

Inventor： Yanshuai Zhao ,  Wei Zhou

IPC: H01C7/02 ,  C04B35/64 ,  H01C7/00 ,  C04B35/634 ,  C04B35/462 ,  C04B35/626 ,  C04B35/653

CPC classification number: H01C7/023 ,  C01G23/006 ,  C04B35/462 ,  C04B35/4682 ,  C04B35/6261 ,  C04B35/62685 ,  C04B35/62695 ,  C04B35/63416 ,  C04B35/64 ,  C04B35/653 ,  C04B2235/32 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/34 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/449 ,  C04B2235/5427 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/785 ,  H01C7/008 ,  H01C7/025 ,  H01C17/06533

Abstract: A thermistor material and a method for preparing a thermistor material are provided. The thermistor material is prepared by mixing and heating a mixture containing BaTiO3, B2O3, SiO2, Li2O, P2O5, Cs2O, Nd2O3, Al2O3 and TiO2.

Abstract translation: 提供一种热敏电阻材料和一种制备热敏电阻材料的方法。 通过混合和加热含有BaTiO3，B2O3，SiO2，Li2O，P2O5，Cs2O，Nd2O3，Al2O3和TiO2的混合物制备热敏电阻材料。

公开(公告)号：US09169161B2

公开(公告)日：2015-10-27

申请号：US13499252

申请日：2010-10-07

Applicant: Bernhard Steinberger ,  Werner Kahr ,  Jan Ihle

Inventor： Bernhard Steinberger ,  Werner Kahr ,  Jan Ihle

IPC: B29B9/16 ,  C04B35/462 ,  C04B35/468 ,  C04B35/465 ,  C04B35/47 ,  C04B35/472 ,  C04B35/49 ,  H01C7/02

CPC classification number: C04B35/4682 ,  C04B35/465 ,  C04B35/47 ,  C04B35/472 ,  C04B35/49 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3263 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3296 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/79 ,  H01C7/025

Abstract: A ceramic material has the following composition: (Ba1-xMnx)O.z(Ti1-yMmy)O2.Dd.Ee. In this composition, (Ba1-xMnx)=A and (Ti1-yMmy)=B, where Mn stands for at least one element selected from: Mg, Ca, Sr, Pb and mixtures thereof; Mm stands for at least one element selected from: Sn, Zr and mixtures thereof; D stands for at least one element having donor properties; E stands for at least one element having acceptor properties. The following applies for the parameters: 0≦x≦0.6; 0≦y≦0.35; 0≦d≦0.02; 0≦e≦0.02; 1

Abstract translation: 陶瓷材料具有以下组成：（Ba1-xMnx）O.z（Ti1-yMy）O2.Dd.Ee。 在该组成中，（Ba1-xMnx）= A和（Ti1-yMyy）= B，其中Mn表示选自Mg，Ca，Sr，Pb及其混合物中的至少一种元素; Mm表示选自Sn，Zr及其混合物中的至少一种元素; D代表具有供体特性的至少一种元素; E表示至少一个具有受体特性的元素。 以下参数适用于：0＆nlE; x＆nlE; 0.6; 0＆nlE; y＆nlE; 0.35; 0＆nlE; d＆nlE; 0.02; 0＆nlE; e＆nlE; 0.02; 1

公开(公告)号：US09076578B2

公开(公告)日：2015-07-07

申请号：US13660527

申请日：2012-10-25

Applicant: Samsung Electro-mechanics Co., Ltd.

Inventor： Sung Hyung Kang ,  Du Won Choi ,  Min Sung Song ,  Sang Hoon Kwon ,  Chang Hoon Kim ,  Byoung Hwa Lee

IPC: H01L41/187 ,  H01C17/065 ,  H01B3/12 ,  H01G4/30 ,  H01C7/00 ,  H01G4/12 ,  C04B35/468 ,  H01C7/02 ,  H01C7/04

CPC classification number: H01C17/06533 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/442 ,  C04B2235/5409 ,  C04B2235/785 ,  C04B2235/79 ,  H01B3/12 ,  H01C7/003 ,  H01C7/025 ,  H01C7/045 ,  H01G4/1227 ,  H01G4/30 ,  Y10T428/2982

Abstract: There is provided a dielectric composition, including; a base powder including BamTiO3 (0.995≦m≦1.010); a first sub-component including 0.05 to 4.00 moles of an oxide or carbonate containing at least one rare-earth element based on 100 moles of the base powder; a second sub-component including 0.05 to 0.70 moles of an oxide or carbonate containing at least one transition metal; a third sub-component including 0.20 to 2.00 moles of a Si oxide; a fourth sub-component including 0.02 to 1.00 mole of an Al oxide; and a fifth sub-component including 20 to 140% of an oxide containing at least one of Ba and Ca, based on the third sub-component.

Abstract translation: 提供介电组合物，包括： 包括BamTiO 3（0.995＆nlE; m＆amp; 1.0l）的基础粉末; 包含基于100摩尔基础粉末含有至少一种稀土元素的氧化物或碳酸酯的0.05至4.00摩尔的第一子组分; 含有0.05〜0.70摩尔含有至少一种过渡金属的氧化物或碳酸盐的第二子成分; 第三子成分，含有0.20〜2.00摩尔的Si氧化物; 第四副成分，含有0.02〜1.00摩尔的Al氧化物; 和包含20〜140％的含有Ba和Ca中的至少一种的氧化物的第五子成分，基于第三子成分。

公开(公告)号：US20150097650A1

公开(公告)日：2015-04-09

申请号：US14502123

申请日：2014-09-30

Applicant: TDK Corporation

Inventor： Yoshikazu SHIMURA ,  Kazuhiko ITOH

IPC: H01C7/02 ,  H01C1/14 ,  H01C7/00

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B35/6264 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3201 ,  C04B2235/3208 ,  H01C1/1406 ,  H01C7/008 ,  H01C7/027

Abstract: A semiconductor ceramic composition which includes a compound represented by the following formula (1) as a main component, (Ba1-x-y-wBixAyREw)m(Ti1-zTMz)O3 (1) (wherein, A is at least one element selected from Na or K, RE is at least one element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er, TM is at least one element selected from the group consisting of V, Nb and Ta, w, x, y, z and m satisfy the following relationships of (2)˜(5), 0.007≦x≦0.125 (2), x

Abstract translation: 包含下述式（1）表示的化合物作为主要成分的（Ba1-xy-wBixAyREw）m（Ti1-zTMz）O3（1）的半导体陶瓷组合物（其中，A为选自Na 或K，RE为选自Y，La，Ce，Pr，Nd，Sm，Gd，Dy和Er中的至少一种元素，TM为选自V，Nb和Ta中的至少一种元素 （2）〜（5），0.007＆nlE; x＆nlE; 0.125（2），x

公开(公告)号：US20150069308A1

公开(公告)日：2015-03-12

申请号：US14395322

申请日：2013-04-19

Applicant: HITACHI METALS, LTD.

Inventor： Takeshi Shimada ,  Itaru Ueda ,  Kentaro Ino

IPC: H01B1/08 ,  C04B35/495 ,  C04B35/505 ,  C04B35/475

CPC classification number: H01C7/008 ,  C04B35/468 ,  C04B35/475 ,  C04B35/495 ,  C04B35/505 ,  C04B35/62675 ,  C04B2235/02 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3224 ,  C04B2235/3251 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/65 ,  C04B2235/661 ,  C04B2235/75 ,  C04B2235/80 ,  H01B1/08 ,  H01C7/025 ,  H01C17/06533

Abstract: Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance α from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO3-based oxide is substituted by Bi and A (in which A is at least one kind of Na, Li and K), the method including: calcining a raw material for forming the semiconductor ceramic composition at 700° C. to 1,300° C.; adding an oxide containing Ba and Ti, which becomes a liquid phase at 1,300° C. to 1,450° C., to the calcined raw material; forming the same; and then sintering at a temperature of 1,300° C. to 1,450° C.

Abstract translation: 提供一种能够抑制电阻温度系数α变小的无铅钙钛矿半导体陶瓷组合物的制造方法，得到稳定的特性。 制造其中BaTiO3系氧化物中Ba的一部分被Bi和A（其中A为Na，Li和K中的至少一种）代替的无铅半导体陶瓷组合物的方法，该方法包括： 在700℃〜1300℃下煅烧形成半导体陶瓷组合物的原料。 向煅烧后的原料中添加含有Ba和Ti的氧化物，其在1300℃〜1450℃成为液相。 形成; 然后在1,300℃的温度下烧结至1450℃。

公开(公告)号：US08686827B2

公开(公告)日：2014-04-01

申请号：US13639804

申请日：2011-04-06

Applicant: Takesha Shimada ,  Kentaro Ino ,  Toshiki Kida

Inventor： Takesha Shimada ,  Kentaro Ino ,  Toshiki Kida

IPC: H01C7/10

CPC classification number: C04B35/4682 ,  C04B35/4686 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3255 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/72 ,  C04B2235/80 ,  C04B2235/85 ,  H01C7/025

Abstract: An object is to provide a PTC element that can be made thinner, using a Pb-free semiconductor ceramic composition.The object is achieved with a PTC element including at least two metal electrodes and a BaTiO3 system semiconductor ceramic composition arranged between the electrodes, in which, in the semiconductor ceramic composition, a portion of Ba in the BaTiO3 system is substituted by Bi—Na and a semiconductorizing element, vacancies are formed on Bi sites by depleting at least a portion of Bi, and oxygen defects are formed on a crystal thereof. Since the PTCR characteristic at the inside of the semiconductor ceramic composition is negligibly weak in comparison with the PTCR characteristic at the interface between the semiconductor ceramic composition and the electrodes, the PTC element can be made thinner.

Abstract translation: 目的是提供一种可以使用无铅半导体陶瓷组合物制成更薄的PTC元件。 该目的是通过包括至少两个金属电极和布置在电极之间的BaTiO 3系半导体陶瓷组合物的PTC元件实现的，其中在半导体陶瓷组合物中，BaTiO 3体系中的Ba的一部分被Bi-Na取代， 半导体元件，通过耗尽至少一部分Bi而在Bi位置上形成空位，并且在其晶体上形成氧缺陷。 由于与半导体陶瓷组合物和电极之间的界面处的PTCR特性相比，半导体陶瓷组合物内部的PTCR特性可忽略不计，因此可以使PTC元件变薄。

公开(公告)号：US20140065308A1

公开(公告)日：2014-03-06

申请号：US14079361

申请日：2013-11-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Kum Jin PARK ,  Chang Hak CHOI ,  Jong Hoon YOO ,  Chang Hoon KIM ,  Hyung Joon JEON ,  Hye Young BAEG

IPC: C04B41/50

CPC classification number: C04B41/50 ,  B82Y30/00 ,  B82Y40/00 ,  C04B35/462 ,  C04B35/465 ,  C04B35/4682 ,  C04B35/62805 ,  C04B35/6281 ,  C04B35/62815 ,  C04B35/62886 ,  C04B35/62897 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3286 ,  C04B2235/6025 ,  C04B2235/652 ,  H01B3/12 ,  H01C7/008 ,  H01C7/025 ,  H01C7/045 ,  H01C17/06533 ,  H01G4/1227 ,  H01G4/30 ,  H01L41/1871

Abstract: There are provided a dielectric composition, a method of fabricating the same, and a multilayer ceeramic electronic component using the same. The dielectric composition includes a perovskite powder particle having a surface on which a doping layer is formed, the doping layer being doped with at least one material selected from a group consisting of alkaline earth elements and boron group elements, and rare earth elements.When a perovskite powder particle is synthesized by using a hydrothermal synthesis method, a doping layer doped with at least one material selected from the group consisting of alkaline earth elements and boron group elements and rare earth elements is formed on a surface of the perovskite powder particle, such that a dielectric composition having excellent reliability, dielectric properties, and electric properties can be fabricated.

Abstract translation: 提供介电组合物，其制造方法和使用其的多层陶瓷电子部件。 电介质组合物包括具有形成有掺杂层的表面的钙钛矿粉末颗粒，所述掺杂层掺杂有选自由碱土金属元素和硼族元素组成的组中的至少一种材料和稀土元素。 当通过使用水热合成方法合成钙钛矿粉末颗粒时，在钙钛矿粉末颗粒的表面上形成掺杂有选自碱土金属元素和硼族元素和稀土元素中的至少一种的掺杂层 ，可以制造具有优异的可靠性，介电特性和电性能的电介质组合物。

公开(公告)号：US08390421B2

公开(公告)日：2013-03-05

申请号：US13326706

申请日：2011-12-15

Applicant: Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

Inventor： Atsushi Kishimoto ,  Wataru Aoto ,  Akinori Nakayama

IPC: H01C7/10

CPC classification number: H01C7/025 ,  C04B35/4682 ,  C04B2235/3208 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/79 ,  H01C17/06533

Abstract: A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.

Abstract translation: 提供了具有稳定的PTC特性，高双点和宽工作温度范围的半导体陶瓷和正系数特性热敏电阻。 半导体陶瓷作为主要成分含有具有由通式AmBO 3表示的钙钛矿结构的钛酸钡类组合物。 在100摩尔％的Ti中，作为半导体形成剂的W被替换为0.05摩尔％以上至0.3摩尔％以下的Ti的量，作为主要部位的A部位的比例m为0.99 ＆nlE; m＆nlE; 1.002，实际测量的烧结密度为理论烧结密度的70％以上且90％以下。 在正系数特性热敏电阻中，由半导体陶瓷形成元件体。