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US07649437B2 Multilayer positive temperature coefficient thermistor 有权
多层正温度系数热敏电阻

Multilayer positive temperature coefficient thermistor
Abstract:
A multilayer positive temperature coefficient thermistor that has a BaTiO3-based ceramic material contained as a primary component in semiconductor ceramic layers, the ratio of the Ba site to the Ti site is in the range of 0.998 to 1.006, and at least one element selected from the group consisting of La, Ce, Pr, Nd, and Pm is contained as a semiconductor dopant. In this multilayer positive temperature coefficient thermistor, a thickness d of internal electrodes layer and a thickness D of the semiconductor ceramic layers satisfy d≧0.6 μm and d/D
Abstract(Chinese):

在半导体陶瓷层中含有作为主要成分的BaTiO3系陶瓷材料的多层正温度系数热敏电阻，Ba部位与Ti部位的比例在0.998〜1.006的范围内， 包含La，Ce，Pr，Nd和Pm的组合作为半导体掺杂剂。 在该多层正温度系数热敏电阻中，内部电极层的厚度d和半导体陶瓷层的厚度D满足d> =0.6μm，d / D <0.2。 因此，即使半导体陶瓷层的烧结密度低，实际测定的烧结密度为理论烧结密度的65％〜90％，则室温下时间变化率低的多层正温度系数热敏电阻 可以在不进行任何复杂的工艺如热处理的情况下获得电阻。 当半导体掺杂剂的含量相对于100摩尔份的Ti为0.1〜0.5摩尔份数时，可以实现1150℃的低温烧成，耐室温性和耐高温性 可以改变。

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